Author: Thomas Gregory Wulz
Publisher:
ISBN:
Category : Boron carbides
Languages : en
Pages : 61
Book Description
Low Pressure Chemical Vapor Deposition of Semiconducting Boron Carbide Thin Films on Silicon
Author: Thomas Gregory Wulz
Publisher:
ISBN:
Category : Boron carbides
Languages : en
Pages : 61
Book Description
Publisher:
ISBN:
Category : Boron carbides
Languages : en
Pages : 61
Book Description
Silicon Carbide Thin Films Via Low Pressure Chemical Vapor Deposition for Micro- and Nano-electromechanical Systems
Author: Christopher Stephen Roper
Publisher:
ISBN:
Category :
Languages : en
Pages : 390
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 390
Book Description
Deposition of Boron Carbide Thin Films by Supersonic Plasma Jet Chemical Vapor Deposition
Author: Olivier Postel
Publisher:
ISBN:
Category :
Languages : en
Pages : 444
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 444
Book Description
Photoassisted Chemical Vapor Deposition for Packaging and Fabrication of Wide-Band Gap Semiconducting Devices
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
Major improvements have been made in the fabrication and in the performance characteristics of boron carbide-based, wide-band gap semiconductor devices. During this grant, working boron carbide transistors, tunnel junctions and homojunction diodes were fabricated. These transistors and diodes were the first carbide based devices of their type to be reported in either academic laboratories or in industry. Protocols for boron carbide substrate fabrication were optimized and the boron carbide thin films were deposited on a wide variety of substrates, including Si(111), aluminum, steel, gold, titanium and silver. PACVD (photoassisted chemical vapor deposition) methods using orthocarborane as a source molecule, were tailored to achieve band gaps of up to 4.0 eV with temperature stability to 250 C. The boron carbide material was successfully doped both n-type and p-type, and methods of tuning the band gap by inclusion of phosphorus-containg dimeric chloro-phospha-3-carborane allowed the band gap to be tuned reliably over the range of 0.7 to 2.4 eV by appropriate adjustment of feed gas. A novel class of CVD molecules, the metallocenes, were used for n-type doping. The sensitivity of these molecules to electron or photon beams have also allowed metal wires and other metal-metal containing features to be written with dimensions as small as 500 angstroms in resolution.
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
Major improvements have been made in the fabrication and in the performance characteristics of boron carbide-based, wide-band gap semiconductor devices. During this grant, working boron carbide transistors, tunnel junctions and homojunction diodes were fabricated. These transistors and diodes were the first carbide based devices of their type to be reported in either academic laboratories or in industry. Protocols for boron carbide substrate fabrication were optimized and the boron carbide thin films were deposited on a wide variety of substrates, including Si(111), aluminum, steel, gold, titanium and silver. PACVD (photoassisted chemical vapor deposition) methods using orthocarborane as a source molecule, were tailored to achieve band gaps of up to 4.0 eV with temperature stability to 250 C. The boron carbide material was successfully doped both n-type and p-type, and methods of tuning the band gap by inclusion of phosphorus-containg dimeric chloro-phospha-3-carborane allowed the band gap to be tuned reliably over the range of 0.7 to 2.4 eV by appropriate adjustment of feed gas. A novel class of CVD molecules, the metallocenes, were used for n-type doping. The sensitivity of these molecules to electron or photon beams have also allowed metal wires and other metal-metal containing features to be written with dimensions as small as 500 angstroms in resolution.
Proceedings of the Eighth International Conference on Chemical Vapor Deposition
Author: J. M. Blocher
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 844
Book Description
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 844
Book Description
Hot Filament Activated Chemical Vapor Deposition of Nitride and Carbide Thin Films
Author: Sadanand Vinayak Deshpande
Publisher:
ISBN:
Category :
Languages : en
Pages : 302
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 302
Book Description
Thin Films by Chemical Vapour Deposition
Author: C. E. Moroșanu
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 724
Book Description
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 724
Book Description
The Growth and Characterization of Beta Silicon Carbide ([beta]-Sic) Thin Films by Chemical Vapor Deposition in a Low Pressure Vertical Reactor
Author: Kenneth George Irvine
Publisher:
ISBN:
Category :
Languages : en
Pages : 170
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 170
Book Description
Setup of Low Pressure Chemical Vapor Deposition of Boron Nitride Thin Films
Author: Hsiao C. Liu
Publisher:
ISBN:
Category :
Languages : en
Pages : 36
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 36
Book Description
The Growth and Characterization of Beta Silicon Carbide (β-Sic) Thin Films by Chemical Vapor Deposition in a Low Pressure Vertical Reactor
Author: Kenneth George Irvine
Publisher:
ISBN:
Category :
Languages : en
Pages : 170
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 170
Book Description