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Author: Govind Agrawal
Publisher: Springer
ISBN:
Category : Juvenile Nonfiction
Languages : en
Pages : 504
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Book Description
Since its invention in 1962, the semiconductor laser has come a long way. Advances in material purity and epitaxial growth techniques have led to a variety of semiconductor lasers covering a wide wavelength range of 0. 3- 100 ILm. The development during the 1970s of GaAs semiconductor lasers, emitting in the near-infrared region of 0. 8--0. 9 ILm, resulted in their use for the first generation of optical fiber communication systems. However, to take advantage of low losses in silica fibers occurring around 1. 3 and 1. 55 ILm, the emphasis soon shifted toward long-wavelength semiconductor lasers. The material system of choice in this wavelength range has been the quaternary alloy InGaAsP. During the last five years or so, the intense development effort devoted to InGaAsP lasers has resulted in a technology mature enough that lightwave transmission systems using InGaAsP lasers are currently being deployed throughout the world. This book is intended to provide a comprehensive account of long-wave length semiconductor lasers. Particular attention is paid to InGaAsP lasers, although we also consider semiconductor lasers operating at longer wave lengths. The objective is to provide an up-to-date understanding of semicon ductor lasers while incorporating recent research results that are not yet available in the book form. Although InGaAsP lasers are often used as an example, the basic concepts discussed in this text apply to all semiconductor lasers, irrespective of their wavelengths.
Author: Govind Agrawal
Publisher: Springer
ISBN:
Category : Juvenile Nonfiction
Languages : en
Pages : 504
Get Book Here
Book Description
Since its invention in 1962, the semiconductor laser has come a long way. Advances in material purity and epitaxial growth techniques have led to a variety of semiconductor lasers covering a wide wavelength range of 0. 3- 100 ILm. The development during the 1970s of GaAs semiconductor lasers, emitting in the near-infrared region of 0. 8--0. 9 ILm, resulted in their use for the first generation of optical fiber communication systems. However, to take advantage of low losses in silica fibers occurring around 1. 3 and 1. 55 ILm, the emphasis soon shifted toward long-wavelength semiconductor lasers. The material system of choice in this wavelength range has been the quaternary alloy InGaAsP. During the last five years or so, the intense development effort devoted to InGaAsP lasers has resulted in a technology mature enough that lightwave transmission systems using InGaAsP lasers are currently being deployed throughout the world. This book is intended to provide a comprehensive account of long-wave length semiconductor lasers. Particular attention is paid to InGaAsP lasers, although we also consider semiconductor lasers operating at longer wave lengths. The objective is to provide an up-to-date understanding of semicon ductor lasers while incorporating recent research results that are not yet available in the book form. Although InGaAsP lasers are often used as an example, the basic concepts discussed in this text apply to all semiconductor lasers, irrespective of their wavelengths.
Author: Hong K. Choi
Publisher: John Wiley & Sons
ISBN: 9780471392002
Category : Science
Languages : en
Pages : 418
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Book Description
Long-wavelength Infrared Semiconductor Lasers provides a comprehensive review of the current status of semiconductor coherent sources emitting in the mid-to far-infrared spectrum and their applications. It includes three topics not covered in any previous book: far-infrared emission from photo-mixers as well as from hot-hole lasers, and InP-based lasers emitting beyond two micrometers. Semiconductor lasers emitting at more than two micrometers have many applications such as in trace gas analysis, environmental monitoring, and industrial process control. Because of very rapid progress in recent years, until this book no comprehensive information beyond scattered journal articles is available at present.
Author: Govind Agrawal
Publisher: Springer
ISBN: 9789401169943
Category : Science
Languages : en
Pages : 0
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Book Description
Since its invention in 1962, the semiconductor laser has come a long way. Advances in material purity and epitaxial growth techniques have led to a variety of semiconductor lasers covering a wide wavelength range of 0. 3- 100 ILm. The development during the 1970s of GaAs semiconductor lasers, emitting in the near-infrared region of 0. 8--0. 9 ILm, resulted in their use for the first generation of optical fiber communication systems. However, to take advantage of low losses in silica fibers occurring around 1. 3 and 1. 55 ILm, the emphasis soon shifted toward long-wavelength semiconductor lasers. The material system of choice in this wavelength range has been the quaternary alloy InGaAsP. During the last five years or so, the intense development effort devoted to InGaAsP lasers has resulted in a technology mature enough that lightwave transmission systems using InGaAsP lasers are currently being deployed throughout the world. This book is intended to provide a comprehensive account of long-wave length semiconductor lasers. Particular attention is paid to InGaAsP lasers, although we also consider semiconductor lasers operating at longer wave lengths. The objective is to provide an up-to-date understanding of semicon ductor lasers while incorporating recent research results that are not yet available in the book form. Although InGaAsP lasers are often used as an example, the basic concepts discussed in this text apply to all semiconductor lasers, irrespective of their wavelengths.
Author: Govind P. Agrawal
Publisher: Springer Science & Business Media
ISBN: 1461304814
Category : Technology & Engineering
Languages : en
Pages : 630
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Book Description
Since its invention in 1962, the semiconductor laser has come a long way. Advances in material purity and epitaxial growth techniques have led to a variety of semiconductor lasers covering a wide wavelength range of 0. 3- 100 ~m. The development during the 1970s of GaAs semiconductor lasers, emitting in the near-infrared region of 0. 8-0. 9 ~m, resulted in their use for the first generation of optical fiber communication systems. However, to take advantage oflow losses in silica fibers occurring around 1. 3 and 1. 55 ~m, the emphasis soon shifted toward long-wavelength semiconductor lasers. The material system of choice in this wavelength range has been the quaternary alloy InGaAsP. During the last five years or so, the intense development effort devoted to InGaAsP lasers has resulted in a technology mature enough that lightwave transmission systems using InGaAsP lasers are currently being deployed throughout the world. This book is intended to provide a comprehensive account of long-wave length semiconductor lasers. Particular attention is paid to InGaAsP lasers, although we also consider semiconductor lasers operating at longer wave lengths. The objective is to provide an up-to-date understanding of semicon ductor lasers while incorporating recent research results that are not yet available in the book form. Although InGaAsP lasers are often used as an example, the basic concepts discussed in this text apply to all semiconductor lasers, irrespective of their wavelengths.
Author: Oleg G. Okhotnikov
Publisher: John Wiley & Sons
ISBN: 9783527630400
Category : Science
Languages : en
Pages : 330
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Book Description
This timely publication presents a review of the most recent developments in the field of Semiconductor Disk Lasers. Covering a wide range of key topics, such as operating principles, thermal management, nonlinear frequency conversion, semiconductor materials, short pulse generation, electrical pumping, and laser applications, the book provides readers with a comprehensive account of the fundamentals and latest advances in this rich and diverse field. In so doing, it brings together contributions from world experts at major collaborative research centers in Europe and the USA. Each chapter includes a tutorial style introduction to the selected topic suitable for postgraduate students and scientists with a basic background in optics - making it of interest to a wide range of scientists, researchers, engineers and physicists working and interested in this rapidly developing field. It will also serve as additional reading for students in the field.
Author: Peter W. Epperlein
Publisher: John Wiley & Sons
ISBN: 1118481860
Category : Technology & Engineering
Languages : en
Pages : 522
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Book Description
This reference book provides a fully integrated novel approach to the development of high-power, single-transverse mode, edge-emitting diode lasers by addressing the complementary topics of device engineering, reliability engineering and device diagnostics in the same book, and thus closes the gap in the current book literature. Diode laser fundamentals are discussed, followed by an elaborate discussion of problem-oriented design guidelines and techniques, and by a systematic treatment of the origins of laser degradation and a thorough exploration of the engineering means to enhance the optical strength of the laser. Stability criteria of critical laser characteristics and key laser robustness factors are discussed along with clear design considerations in the context of reliability engineering approaches and models, and typical programs for reliability tests and laser product qualifications. Novel, advanced diagnostic methods are reviewed to discuss, for the first time in detail in book literature, performance- and reliability-impacting factors such as temperature, stress and material instabilities. Further key features include: practical design guidelines that consider also reliability related effects, key laser robustness factors, basic laser fabrication and packaging issues; detailed discussion of diagnostic investigations of diode lasers, the fundamentals of the applied approaches and techniques, many of them pioneered by the author to be fit-for-purpose and novel in the application; systematic insight into laser degradation modes such as catastrophic optical damage, and a wide range of technologies to increase the optical strength of diode lasers; coverage of basic concepts and techniques of laser reliability engineering with details on a standard commercial high power laser reliability test program. Semiconductor Laser Engineering, Reliability and Diagnostics reflects the extensive expertise of the author in the diode laser field both as a top scientific researcher as well as a key developer of high-power highly reliable devices. With invaluable practical advice, this new reference book is suited to practising researchers in diode laser technologies, and to postgraduate engineering students.
Author: Jens Buus
Publisher: SPIE Press
ISBN: 9780819405357
Category : Technology & Engineering
Languages : en
Pages : 128
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Book Description
This tutorial text describes the properties of advanced semiconductor lasers in detail. Although the text gives a detailed theoretical account, a number of practical examples and experimental results are described as well. The material presented is at an advanced level and is of particular interest to scientists and engineers with a basic familiarity with semiconductor lasers who would like a description of the properties of single frequency semiconductor lasers and of the possibilities offered by these devices.
Author: Eli Kapon
Publisher: Academic Press
ISBN: 0080540929
Category : Science
Languages : en
Pages : 467
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Book Description
This book covers the device physics of semiconductor lasers in five chapters written by recognized experts in this field. The volume begins by introducing the basic mechanisms of optical gain in semiconductors and the role of quantum confinement in modern quantum well diode lasers. Subsequent chapters treat the effects of built-in strain, one of the important recent advances in the technology of these lasers, and the physical mechanisms underlying the dynamics and high speed modulation of these devices. The book concludes with chapters addressing the control of photon states in squeezed-light and microcavity structures, and electron states in low dimensional quantum wire and quantum dot lasers. The book offers useful information for both readers unfamiliar with semiconductor lasers, through the introductory parts of each chapter, as well as a state-of-the-art discussion of some of the most advanced semiconductor laser structures, intended for readers engaged in research in this field. This book may also serve as an introduction for the companion volume, Semiconductor Lasers II: Materials and Structures, which presents further details on the different material systems and laser structures used for achieving specific diode laser performance features. - Introduces the reader to the basics of semiconductor lasers - Covers the fundamentals of lasing in semiconductors, including quantum confined and microcavity structures - Beneficial to readers interested in the more general aspects of semiconductor physics and optoelectronic devices, such as quantum confined heterostructures and integrated optics - Each chapter contains a thorough introduction to the topic geared toward the non-expert, followed by an in-depth discussion of current technology and future trends - Useful for professionals engaged in research and development - Contains numerous schematic and data-containing illustrations
Author: Weng W. Chow
Publisher: Springer Science & Business Media
ISBN: 3662038803
Category : Science
Languages : en
Pages : 253
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Book Description
This in-depth title discusses the underlying physics and operational principles of semiconductor lasers. It analyzes the optical and electronic properties of the semiconductor medium in detail, including quantum confinement and gain-engineering effects. The text also includes recent developments in blue-emitting semiconductor lasers.
Author: Victor Mikhailovich Ustinov
Publisher:
ISBN: 9780198526797
Category : Science
Languages : en
Pages : 306
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Book Description
The book addresses issues associated with physics and technology of injection lasers based on self-organized quantum dots. Fundamental and technological aspects of quantum dot edge-emitting lasers and VCSELs, their current status and future prospects are summarized and reviewed. Basic principles of QD formation using self-organization phenomena are reviewed. Structural and optical properties of self-organized QDs are considered with a number of examples in different material systems. Recent achievements in controlling the QD properties including the effects of vertical stacking, changing the matrix bandgap and the surface density of QDs are reviewed. The authors focus on the use of self-organized quantum dots in laser structures, fabrication and characterization of edge and surface emitting diode lasers, their properties and optimization with special attention paid to the relationship between structural and electronic properties of QDs and laser characteristics. The threshold and power characteristics of the state-of-the-art QD lasers are demonstrated. Issues related to the long-wavelength (1.3-mm) lasers on a GaAs substrate are also addressed and recent results on InGaAsN-based diode lasers presented for the purpose of comparison.
