Long Wavelength GaAsSb Quantum Well Lasers on GaAs Substrates Grown by MOVPE PDF Download
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Author: 王義欣
Publisher:
ISBN:
Category :
Languages : en
Pages : 94
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Author: 王義欣
Publisher:
ISBN:
Category :
Languages : en
Pages : 94
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Book Description
Author: Stuart Irvine
Publisher: John Wiley & Sons
ISBN: 111931304X
Category : Technology & Engineering
Languages : en
Pages : 584
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Book Description
Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Author: Peter S. Zory
Publisher: Academic Press
ISBN: 9780127818900
Category : Science
Languages : en
Pages : 530
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Book Description
Provides information on all aspects of QW lasers, from the basic mechanism of optical gain, through the current technological state of the art, to the future technologies of quantum wires and quantum dots. Those working with lasers, especially semiconductor lasers, should find the book useful.
Author: Victor Mikhailovich Ustinov
Publisher:
ISBN: 9780198526797
Category : Science
Languages : en
Pages : 306
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Book Description
The book addresses issues associated with physics and technology of injection lasers based on self-organized quantum dots. Fundamental and technological aspects of quantum dot edge-emitting lasers and VCSELs, their current status and future prospects are summarized and reviewed. Basic principles of QD formation using self-organization phenomena are reviewed. Structural and optical properties of self-organized QDs are considered with a number of examples in different material systems. Recent achievements in controlling the QD properties including the effects of vertical stacking, changing the matrix bandgap and the surface density of QDs are reviewed. The authors focus on the use of self-organized quantum dots in laser structures, fabrication and characterization of edge and surface emitting diode lasers, their properties and optimization with special attention paid to the relationship between structural and electronic properties of QDs and laser characteristics. The threshold and power characteristics of the state-of-the-art QD lasers are demonstrated. Issues related to the long-wavelength (1.3-mm) lasers on a GaAs substrate are also addressed and recent results on InGaAsN-based diode lasers presented for the purpose of comparison.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
We have investigated the use of GaAsSb in edge-emitting laser active regions, in order to obtain lasing near 1.3[micro]m. Single quantum well GaAsSb devices display electroluminescence at wavelengths as long as 1.34[micro]m, but substantial blueshifts occur under high injection conditions. GaAsSb single quantum well edge emitters have been obtained which lase at 1.275[micro]m with a room-temperature threshold current density as low as 535 A/cm[sup 2]. Modification of the basic GaAsSb/GaAs structure with the addition of InGaAs layers results in a strongly type-II band alignment which can be used to further extend the emission wavelength of these devices. Using GaAsSb/InGaAs active regions, lasers emitting at 1.17[micro]m have been obtained with room-temperature threshold current densities of 120 A/cm[sup 2], and devices operating at 1.29[micro]m have displayed thresholds as low as 375 A/cm[sup 2]. Characteristic temperatures for devices employing various GaAsSb-based active regions have been measured to be 60-73 K.
Author: Ivan Kaminow
Publisher: Academic Press
ISBN: 0080565018
Category : Technology & Engineering
Languages : en
Pages : 945
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Book Description
Optical Fiber Telecommunications V (A&B) is the fifth in a series that has chronicled the progress in the research and development of lightwave communications since the early 1970s. Written by active authorities from academia and industry, this edition not only brings a fresh look to many essential topics but also focuses on network management and services. Using high bandwidth in a cost-effective manner for the development of customer applications is a central theme. This book is ideal for R&D engineers and managers, optical systems implementers, university researchers and students, network operators, and the investment community. Volume (A) is devoted to components and subsystems, including: semiconductor lasers, modulators, photodetectors, integrated photonic circuits, photonic crystals, specialty fibers, polarization-mode dispersion, electronic signal processing, MEMS, nonlinear optical signal processing, and quantum information technologies. Volume (B) is devoted to systems and networks, including: advanced modulation formats, coherent systems, time-multiplexed systems, performance monitoring, reconfigurable add-drop multiplexers, Ethernet technologies, broadband access and services, metro networks, long-haul transmission, optical switching, microwave photonics, computer interconnections, and simulation tools. Biographical Sketches Ivan Kaminow retired from Bell Labs in 1996 after a 42-year career. He conducted seminal studies on electrooptic modulators and materials, Raman scattering in ferroelectrics, integrated optics, semiconductor lasers (DBR , ridge-waveguide InGaAsP and multi-frequency), birefringent optical fibers, and WDM networks. Later, he led research on WDM components (EDFAs, AWGs and fiber Fabry-Perot Filters), and on WDM local and wide area networks. He is a member of the National Academy of Engineering and a recipient of the IEEE/OSA John Tyndall, OSA Charles Townes and IEEE/LEOS Quantum Electronics Awards. Since 2004, he has been Adjunct Professor of Electrical Engineering at the University of California, Berkeley. Tingye Li retired from AT&T in 1998 after a 41-year career at Bell Labs and AT&T Labs. His seminal work on laser resonator modes is considered a classic. Since the late 1960s, He and his groups have conducted pioneering studies on lightwave technologies and systems. He led the work on amplified WDM transmission systems and championed their deployment for upgrading network capacity. He is a member of the National Academy of Engineering and a foreign member of the Chinese Academy of Engineering. He is a recipient of the IEEE David Sarnoff Award, IEEE/OSA John Tyndall Award, OSA Ives Medal/Quinn Endowment, AT&T Science and Technology Medal, and IEEE Photonics Award. Alan Willner has worked at AT&T Bell Labs and Bellcore, and he is Professor of Electrical Engineering at the University of Southern California. He received the NSF Presidential Faculty Fellows Award from the White House, Packard Foundation Fellowship, NSF National Young Investigator Award, Fulbright Foundation Senior Scholar, IEEE LEOS Distinguished Lecturer, and USC University-Wide Award for Excellence in Teaching. He is a Fellow of IEEE and OSA, and he has been President of the IEEE LEOS, Editor-in-Chief of the IEEE/OSA J. of Lightwave Technology, Editor-in-Chief of Optics Letters, Co-Chair of the OSA Science & Engineering Council, and General Co-Chair of the Conference on Lasers and Electro-Optics. For nearly three decades, the OFT series has served as the comprehensive primary resource covering progress in the science and technology of optical fiber telecom. It has been essential for the bookshelves of scientists and engineers active in the field. OFT V provides updates on considerable progress in established disciplines, as well as introductions to new topics. [OFT V]... generates a value that is even higher than that of the sum of its chapters.
![Characteristics of GaAsSb Single Quantum Well Lasers Emitting Near 1.3 [mu]m PDF](https://books.google.com/books/content/images/frontcover/vWFrAQAACAAJ?fife=w80-h100)
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 15
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Book Description
The authors report data on GaAsSb single quantum well lasers grown on GaAs substrates. Room temperature pulsed emission at 1.275 [mu]m in a 1,250 [mu]m-long device has been observed. Minimum threshold current densities of 535 A/cm2 were measured in 2000 [mu]m long lasers. The authors also measured internal losses of 2--5 cm−1, internal quantum efficiencies of 30-38% and characteristic temperature T0 of 67--77 C. From these parameters a gain constant G0 of 1,660 cm−1 and a transparency current density J{sub tr} of 134 A/cm2 were calculated. The results indicate the potential for fabricating 1.3 [mu]m VCSELs from these materials.
Author: Carl W. Wilmsen
Publisher: Cambridge University Press
ISBN: 9780521006293
Category : Science
Languages : en
Pages : 478
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Book Description
This book, first published in 1999, provides a comprehensive description of the physics, design, fabrication, characterization, and applications of vertical-cavity surface-emitting lasers.
Author: Tingye Li
Publisher: Elsevier
ISBN: 0080569617
Category : Technology & Engineering
Languages : en
Pages : 945
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Book Description
Optical Fiber Telecommunications V (A&B) is the fifth in a series that has chronicled the progress in the research and development of lightwave communications since the early 1970s. Written by active authorities from academia and industry, this edition not only brings a fresh look to many essential topics but also focuses on network management and services. Using high bandwidth in a cost-effective manner for the development of customer applications is a central theme. This book is ideal for R&D engineers and managers, optical systems implementers, university researchers and students, network operators, and the investment community. Volume (A) is devoted to components and subsystems, including: semiconductor lasers, modulators, photodetectors, integrated photonic circuits, photonic crystals, specialty fibers, polarization-mode dispersion, electronic signal processing, MEMS, nonlinear optical signal processing, and quantum information technologies. Volume (B) is devoted to systems and networks, including: advanced modulation formats, coherent systems, time-multiplexed systems, performance monitoring, reconfigurable add-drop multiplexers, Ethernet technologies, broadband access and services, metro networks, long-haul transmission, optical switching, microwave photonics, computer interconnections, and simulation tools. Biographical Sketches Ivan Kaminow retired from Bell Labs in 1996 after a 42-year career. He conducted seminal studies on electrooptic modulators and materials, Raman scattering in ferroelectrics, integrated optics, semiconductor lasers (DBR , ridge-waveguide InGaAsP and multi-frequency), birefringent optical fibers, and WDM networks. Later, he led research on WDM components (EDFAs, AWGs and fiber Fabry-Perot Filters), and on WDM local and wide area networks. He is a member of the National Academy of Engineering and a recipient of the IEEE/OSA John Tyndall, OSA Charles Townes and IEEE/LEOS Quantum Electronics Awards. Since 2004, he has been Adjunct Professor of Electrical Engineering at the University of California, Berkeley. Tingye Li retired from AT&T in 1998 after a 41-year career at Bell Labs and AT&T Labs. His seminal work on laser resonator modes is considered a classic. Since the late 1960s, He and his groups have conducted pioneering studies on lightwave technologies and systems. He led the work on amplified WDM transmission systems and championed their deployment for upgrading network capacity. He is a member of the National Academy of Engineering and a foreign member of the Chinese Academy of Engineering. He is a recipient of the IEEE David Sarnoff Award, IEEE/OSA John Tyndall Award, OSA Ives Medal/Quinn Endowment, AT&T Science and Technology Medal, and IEEE Photonics Award. Alan Willner has worked at AT&T Bell Labs and Bellcore, and he is Professor of Electrical Engineering at the University of Southern California. He received the NSF Presidential Faculty Fellows Award from the White House, Packard Foundation Fellowship, NSF National Young Investigator Award, Fulbright Foundation Senior Scholar, IEEE LEOS Distinguished Lecturer, and USC University-Wide Award for Excellence in Teaching. He is a Fellow of IEEE and OSA, and he has been President of the IEEE LEOS, Editor-in-Chief of the IEEE/OSA J. of Lightwave Technology, Editor-in-Chief of Optics Letters, Co-Chair of the OSA Science & Engineering Council, and General Co-Chair of the Conference on Lasers and Electro-Optics.
Author: Michael Jetter
Publisher: John Wiley & Sons
ISBN: 3527807977
Category : Technology & Engineering
Languages : en
Pages : 584
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Book Description
Vertical External Cavity Surface Emitting Lasers Provides comprehensive coverage of the advancement of vertical-external-cavity surface-emitting lasers Vertical-external-cavity surface-emitting lasers (VECSELs) emit coherent light from the infrared to the visible spectral range with high power output. Recent years have seen new device developments – such as the mode-locked integrated (MIXSEL) and the membrane external-cavity surface emitting laser (MECSEL) – expand the application of VECSELs to include laser cooling, spectroscopy, telecommunications, biophotonics, and laser-based displays and projectors. In Vertical External Cavity Surface Emitting Lasers: VECSEL Technology and Applications, leading international research groups provide a comprehensive, fully up-to-date account of all fundamental and technological aspects of vertical external cavity surface emitting lasers. This unique book reviews the physics and technology of optically-pumped disk lasers and discusses the latest developments of VECSEL devices in different wavelength ranges. Topics include OP-VECSEL physics, continuous wave (CW) lasers, frequency doubling, carrier dynamics in SESAMs, and characterization of nonlinear lensing in VECSEL gain samples. This authoritative volume: Summarizes new concepts of DBR-free and MECSEL lasers for the first time Covers the mode-locking concept and its application Provides an overview of the emerging concept of self-mode locking Describes the development of next-generation OPS laser products Vertical External Cavity Surface Emitting Lasers: VECSEL Technology and Applications is an invaluable resource for laser specialists, semiconductor physicists, optical industry professionals, spectroscopists, telecommunications engineers and industrial physicists.
