Author: John Michael Wilson
Publisher:
ISBN:
Category :
Languages : en
Pages : 241

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Keywords: Sandia, gear, rotate, varactor, SUMMiT, removable mask, RF, self masking, metallization, tunable capacitor, MEMS, RF MEMS.

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Publisher:
ISBN:
Category :
Languages : en
Pages :

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MEMS tunable capacitors exhibit a non-linear capacitance verses voltage tuning characteristic. In addition, electro-statically actuated devices suffer from 'pull-in' after exceeding 33% of their total displacement. This non-linear behavior and limitation on continuous tuning that occurs from 'pull-in', limits the easy-of-use and tuning range of previously reported MEMS tunable capacitors. This dissertation presents a MEMS tunable capacitor that produces a wide tuning range with linear tuning throughout. The basic concept is similar to that of trimming/tuning capacitors used in early radios, where multiple metal plates create a capacitor that is varied by rotating a shaft which changes the overlap area. However, this device is built using modern IC processing methods that enable batch fabrication. The core of the design comes from high yield, mechanically proven gear structures defined in the SUMMiT design library, available from Sandia National Labs. Significant alterations were made to the physical gear structure to realize the final device. A novel masking technique that enables the complex patterning of metal(s), in different amounts, on any layer(s) of a released chip was also conceived. This 'integrated removable self-masking technique' enables the construction of low-loss controlled impedance structures such as coplanar waveguides in a polysilicon only MEMS process. In addition, this technique allows metal to be deposited in a regulated manner on multiple layers of a post release chip so that low-loss metal-insulator-metal capacitors can be built. Numerous device topologies are possible each with advantages and disadvantages. These various topologies and their design are discussed in detail. The metallization techniques for depositing single or dual metal layers are presented, along with a discussion on the construction of the masking layers so that they can be easily removed. Device simulation, modeling, and measurement are then presented.

Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 768

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Author: Maher Bakri-Kassem
Publisher:
ISBN:
Category :
Languages : en
Pages : 179

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Book Description
Micro-Electro-Mechanical Systems (MEMS) varactors have the potential to replace conventional varactor diodes, due to their high loss and non-linearity, in many applications such as phase shifters, oscillators, and tunable filters. The objective of this thesis is to develop novel MEMS varactors to improve the capacitance tuning ratio, linearity, and quality factor. Several novel varactor configurations are developed, analyzed, fabricated and tested. They are built by using standard MEMS fabrication processes, as well as monolithic integration techniques in CMOS technology. The first capacitor consists of two movable plates, loaded with a nitride layer that exhibits an analog continuous capacitance tuning ratio. To decrease the the parasitic capacitance, a trench in the silicon substrate under the capacitor is adopted. The use of an insulation dielectric layer on the bottom plate of the MEMS capacitor increases the capacitors' tuning ratio. Experimental and theoretical results are presented for two versions of the proposed capacitor with different capacitance values. The measured capacitance tuning ratio is 280% at 1 GHz. The proposed MEMS vararctor is built using the MetalMUMPs process. The second, third, and fourth capacitors have additional beams that are called carrier beams. The use of the carrier beams makes it possible to obtain an equivalent nonlinear spring constant, which increases the capacitors' analog continuous tuning ratio. A lumped element model and a continuous model of the proposed variable capacitors are developed. The continuous model is simulated by commercial software. A detailed analysis for the steady state of the capacitors is presented. The measured capacitance tuning ratios of these three capacitors are 410%, 400% and 470%, respectively at 1 GHz. Also, the selfresonance frequency is measured and found to exceed 11 GHz. The proposed MEMS variable capacitors are built by the PolyMUMPs process. The fifth novel parallel-plate MEMS varactor has thin-film vertical comb actuators as its driver. Such an actuator can vertically displace both plates of the parallel-plate capacitor. By making use of the fringing field, this actuator exhibits linear displacement behavior, caused by the induced electrostatic force of the actuator's electrodes. The proposed capacitor has a low parasitic capacitance and linear deflection due to the mechanically connected and electrically isolated actuators to the capacitor's parallel-plates. The measured tuning capacitance ratio is 7:1 (600%) at 1 GHz. The fabricated MEMS varactor exhibits a self resonance frequency of 9 GHz and built by MetalMUMPs process. The sixth parallel-plate MEMS varactor exhibits a linear response and high tuning capacitance ratio. The capacitor employs the residual stress of the chosen bi-layer, and the non-linear spring constants from the suspended cantilevers to obtain a non-linear restoring force that compensates for the nonlinear electrostatic force induced between the top and bottom plates. Two existing techniques are used to widen the tuning range of the proposed capacitor. The first technique is to decrease the parasitic capacitance by etching the lossy substrate under the capacitor's plates. The second technique is employed to increase the capacitance density, where the areas between the top and bottom plates overlap, by applying a thin film of dielectric material, deposited by the atomic layer deposition (ALD) technique. The measured linear continuous tuning ratio for the proposed capacitor, built in the PolyMUMPs process, is 5:1 (400%). The seventh and eighth MEMS variable capacitors have plates that curl up. These capacitors are built in 0.35 [mu]m CMOS technology from the interconnect metallization layers. The plates of the presented capacitors are intentionally curled upward to control the tuning performance. A newly developed maskless post-processing technique that is appropriate for MEMS/CMOS circuits is proposed. it consists of dry and wet etching steps, developed to integrate the proposed MEMS varactors in CMOS technology. Mechanically, the capacitors are simulated by the finite element method in ANSYS, and the results are compared with the measured results. The seventh capacitor is a tri-state structure that exhibits a measured tuning range of 460% at 1 GHz with a flat capacitance response that is superior to that of conventional digital capacitors. The proposed capacitor is simulated in HFSS and the extracted capacitance is compared with the measured capacitance over a frequency range of 1 GHz to 5 GHz. The eighth capacitor is an analog continuous structure that demonstrates a measured continuous tuning range of 115% at 1 GHz with no pull-in. The measured quality factor for both CMOSbased capacitors is more than 300 at 1.5 GHz. The proposed curled-plate capacitors have a small area and can be realized to build a System-on-Chip (SoC). Finally, a tunable band pass filter that utilizes the MEMS variable capacitors in 0.18 [mu]m CMOS technology from TSMC is designed, modeled and fabricated.

Author:
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ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 776

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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 75

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Book Description
The rapid increase in the importance and development of RF MEMS in today's technologies has emphasized the fact that reliable, sturdy and self-sufficient devices are urgently needed. We propose robust design and testing techniques for the RF MEMS reconfigurable tunable capacitor. A novel idea of significantly increasing the tuning range (by at least 10 times) has been formulated. Further, a dual-mode built-in self test (BIST) technique for the device is discussed in detail. These techniques ensure that the device is extremely powerful in providing wide range of capacitance tuning, and capable of self-testing thereby providing better fault-coverage. Mathematical calculations and ANSYS simulations are performed which prove the uniqueness and versatility of the RF MEMS reconfigurable tunable capacitor.

Author: Masayoshi Esashi
Publisher: John Wiley & Sons
ISBN: 3527823255
Category : Technology & Engineering
Languages : en
Pages : 528

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Book Description
Explore heterogeneous circuit integration and the packaging needed for practical applications of microsystems MEMS and system integration are important building blocks for the “More-Than-Moore” paradigm described in the International Technology Roadmap for Semiconductors. And, in 3D and Circuit Integration of MEMS, distinguished editor Dr. Masayoshi Esashi delivers a comprehensive and systematic exploration of the technologies for microsystem packaging and heterogeneous integration. The book focuses on the silicon MEMS that have been used extensively and the technologies surrounding system integration. You’ll learn about topics as varied as bulk micromachining, surface micromachining, CMOS-MEMS, wafer interconnection, wafer bonding, and sealing. Highly relevant for researchers involved in microsystem technologies, the book is also ideal for anyone working in the microsystems industry. It demonstrates the key technologies that will assist researchers and professionals deal with current and future application bottlenecks. Readers will also benefit from the inclusion of: A thorough introduction to enhanced bulk micromachining on MIS process, including pressure sensor fabrication and the extension of MIS process for various advanced MEMS devices An exploration of epitaxial poly Si surface micromachining, including process condition of epi-poly Si, and MEMS devices using epi-poly Si Practical discussions of Poly SiGe surface micromachining, including SiGe deposition and LP CVD polycrystalline SiGe A concise treatment of heterogeneously integrated aluminum nitride MEMS resonators and filters Perfect for materials scientists, electronics engineers, and electrical and mechanical engineers, 3D and Circuit Integration of MEMS will also earn a place in the libraries of semiconductor physicists seeking a one-stop reference for circuit integration and the practical application of microsystems.

Author: Gabriel M. Rebeiz
Publisher: John Wiley & Sons
ISBN: 0471462888
Category : Technology & Engineering
Languages : en
Pages : 512

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Book Description
Ultrasmall Radio Frequency and Micro-wave Microelectromechanical systems (RF MEMs), such as switches, varactors, and phase shifters, exhibit nearly zero power consumption or loss. For this reason, they are being developed intensively by corporations worldwide for use in telecommunications equipment. This book acquaints readers with the basics of RF MEMs and describes how to design practical circuits and devices with them. The author, an acknowledged expert in the field, presents a range of real-world applications and shares many valuable tricks of the trade.

Author: Richard S. Muller
Publisher: IEEE
ISBN: 9780879422455
Category : Technology & Engineering
Languages : en
Pages : 472

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Author: Henry Baltes
Publisher: John Wiley & Sons
ISBN: 3527616934
Category : Technology & Engineering
Languages : en
Pages : 612

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Book Description
Microstructures, electronics, nanotechnology - these vast fields of research are growing together as the size gap narrows and many different materials are combined. Current research, engineering sucesses and newly commercialized products hint at the immense innovative potentials and future applications that open up once mankind controls shape and function from the atomic level right up to the visible world without any gaps. Sensor systems, microreactors, nanostructures, nanomachines, functional surfaces, integrated optics, displays, communications technology, biochips, human/machine interfaces, prosthetics, miniaturized medical and surgery equipment and many more opportunities are being explored. This new series, Advanced Micro and Nano Systems, provides cutting-edge reviews from top authors on technologies, devices and advanced systems from the micro and nano worlds.