Silicon-Germanium (SiGe) Nanostructures PDF Download
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Author: Y. Shiraki
Publisher: Elsevier
ISBN: 0857091425
Category : Technology & Engineering
Languages : en
Pages : 649
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Book Description
Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices.The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices.With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures. - Reviews the materials science of nanostructures and their properties and applications in different electronic devices - Assesses the structural properties of SiGe nanostructures, discussing electronic band structures of SiGe alloys - Explores the formation of SiGe nanostructuresfeaturing different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition
Author: Y. Shiraki
Publisher: Elsevier
ISBN: 0857091425
Category : Technology & Engineering
Languages : en
Pages : 649
Get Book Here
Book Description
Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices.The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices.With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures. - Reviews the materials science of nanostructures and their properties and applications in different electronic devices - Assesses the structural properties of SiGe nanostructures, discussing electronic band structures of SiGe alloys - Explores the formation of SiGe nanostructuresfeaturing different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition
Author: Laurent Vivien
Publisher: Taylor & Francis
ISBN: 1439836116
Category : Science
Languages : en
Pages : 831
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Book Description
The development of integrated silicon photonic circuits has recently been driven by the Internet and the push for high bandwidth as well as the need to reduce power dissipation induced by high data-rate signal transmission. To reach these goals, efficient passive and active silicon photonic devices, including waveguide, modulators, photodetectors,
Author: Ping Jiang
Publisher: World Scientific
ISBN: 9814554065
Category :
Languages : en
Pages : 2151
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Book Description
The 21st conference proceedings continue the tradition of the ICPS series. The proceedings cover all aspects of semiconductor physics, including those related to materials, processing and devices. Plenary and invited speakers address areas of major interest.
Author: Tingkai Li
Publisher: CRC Press
ISBN: 1439815232
Category : Science
Languages : en
Pages : 588
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Book Description
Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more
Author: A.G. Cullis
Publisher: CRC Press
ISBN: 1351083074
Category : Science
Languages : en
Pages : 626
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Book Description
The Institute of Physics Conference Series is a leading International medium for the rapid publication of proceedings of major conferences and symposia reviewing new developments in physics and related areas. Volumes in the series comprise original refereed papers and are regarded as standard referee works. As such, they are an essential part of major libration collections worldwide. The twelfth conference on the Microscopy of Semiconducting Materials (MSM) was held at the University of Oxford, 25-29 March 2001. MSM conferences focus on recent international advances in semiconductor studies carried out by all forms of microscopy. The event was organized with scientific sponsorship by the Royal Microscopical Society, The Electron Microscopy and Analysis Group of the Institute of Physics and the Materials Research Society. With the continual shrinking of electronic device dimensions and accompanying enhancement in device performance, the understanding of semiconductor microscopic properties at the nanoscale (and even at the atomic scale) is increasingly critical for further progress to be achieved. This conference proceedings provides an overview of the latest instrumentation, analysis techniques and state-of-the-art advances in semiconducting materials science for solid state physicists, chemists, and materials scientists.
Author:
Publisher:
ISBN:
Category : Engineering
Languages : en
Pages : 878
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Book Description
Author: Marian A. Herman
Publisher: Springer Science & Business Media
ISBN: 3662070642
Category : Science
Languages : en
Pages : 530
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Book Description
In a uniform and comprehensive manner the authors describe all the important aspects of the epitaxial growth processes of solid films on crystalline substrates, e.g. processes in which atoms of the growing film mimic the arrangement of the atoms of the substrate. Emphasis is put on sufficiently fundamental and unequivocal presentation of the subject in the form of an easy-to-read review. A large part of this book focuses on the problems of heteroepitaxy. The most important epitaxial growth techniques which are currently widely used in basic research as well as in manufacturing processes of devices are presented and discussed in detail.
Author:
Publisher: Academic Press
ISBN: 0128155191
Category : Science
Languages : en
Pages : 242
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Book Description
Silicon Photonics, Volume 99 in the Semiconductors and Semimetals series, highlights new advances in the field, with this updated volume presenting interesting chapters on Transfer printing in Silicon Photonics, Epitaxial integration of antimonide-based semiconductor lasers on Si, Photonic crystal lasers and nanolasers on Si, the Evolution of monolithic quantum-dot light source for silicon photonics, III-V on Si nanocomposites, the Heterogeneous integration of III-V on Si by bonding, the Growth of III-V on Silicon compliant substrates and lasers by MOCVD, Photonic Integrated Circuits on Si, Integrated Photonics for Bio- and Environmental sensing, Membrane Lasers/Photodiodes on Si, and more. - Provides the authority and expertise of leading contributors from an international board of authors - Represents the latest release in the Semiconductors and Semimetals series - Updated release includes the latest information on Silicon Photonics
Author: John D. Cressler
Publisher: CRC Press
ISBN: 1420066919
Category : Technology & Engineering
Languages : en
Pages : 468
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Book Description
SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. However, new effects and nuances of device operation are uncovered year-after-year as transistor scaling advances and application targets march steadily upward in frequency and sophistication. Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text explores SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, various other heterostructure devices, as well as optoelectronic components. The book provides an overview, characteristics, and derivative applications for each device covered. It discusses device physics, broadband noise, performance limits, reliability, engineered substrates, and self-assembling nanostructures. Coverage of optoelectronic devices includes Si/SiGe LEDs, near-infrared detectors, photonic transistors for integrated optoelectronics, and quantum cascade emitters. In addition to this substantial collection of material, the book concludes with a look at the ultimate limits of SiGe HBTs scaling. It contains easy-to-reference appendices on topics including the properties of silicon and germanium, the generalized Moll-Ross relations, and the integral charge-control model, and sample SiGe HBT compact model parameters.
Author: Jef Poortmans
Publisher: John Wiley & Sons
ISBN: 0470091266
Category : Science
Languages : en
Pages : 504
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Book Description
Thin-film solar cells are either emerging or about to emerge from the research laboratory to become commercially available devices finding practical various applications. Currently no textbook outlining the basic theoretical background, methods of fabrication and applications currently exist. Thus, this book aims to present for the first time an in-depth overview of this topic covering a broad range of thin-film solar cell technologies including both organic and inorganic materials, presented in a systematic fashion, by the scientific leaders in the respective domains. It covers a broad range of related topics, from physical principles to design, fabrication, characterization, and applications of novel photovoltaic devices.
