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Author: Guntrade Roll
Publisher: Logos Verlag Berlin GmbH
ISBN: 3832532617
Category : Science
Languages : en
Pages : 240
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Book Description
The continuous improvement in semiconductor technology requires field effect transistor scaling while maintaining acceptable leakage currents. This study analyzes the effect of scaling on the leakage current and defect distribution in peripheral DRAM transistors. The influence of important process changes, such as the high-k gate patterning and encapsulation as well as carbon co-implants in the source/drain junction are investigated by advanced electrical measurements and TCAD simulation. A complete model for the trap assisted leakage currents in the silicon bulk of the transistors is presented.
Author: Guntrade Roll
Publisher: Logos Verlag Berlin GmbH
ISBN: 3832532617
Category : Science
Languages : en
Pages : 240
Get Book Here
Book Description
The continuous improvement in semiconductor technology requires field effect transistor scaling while maintaining acceptable leakage currents. This study analyzes the effect of scaling on the leakage current and defect distribution in peripheral DRAM transistors. The influence of important process changes, such as the high-k gate patterning and encapsulation as well as carbon co-implants in the source/drain junction are investigated by advanced electrical measurements and TCAD simulation. A complete model for the trap assisted leakage currents in the silicon bulk of the transistors is presented.
Author: Sorin Cristoloveanu
Publisher: Springer Science & Business Media
ISBN: 9780792395485
Category : Technology & Engineering
Languages : en
Pages : 414
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Book Description
Silicon on Insulator is more than a technology, more than a job, and more than a venture in microelectronics; it is something different and refreshing in device physics. This book recalls the activity and enthu siasm of our SOl groups. Many contributing students have since then disappeared from the SOl horizon. Some of them believed that SOl was the great love of their scientific lives; others just considered SOl as a fantastic LEGO game for adults. We thank them all for kindly letting us imagine that we were guiding them. This book was very necessary to many people. SOl engineers will certainly be happy: indeed, if the performance of their SOl components is not always outstanding, they can now safely incriminate the relations given in the book rather than their process. Martine, Gunter, and Y. S. Chang can contemplate at last the amount of work they did with the figures. Our SOl accomplices already know how much we borrowed from their expertise and would find it indecent to have their detailed contri butions listed. Jean-Pierre and Dimitris incited the book, while sharing their experience in the reliability of floating bodies. Our families and friends now realize the SOl capability of dielectrically isolating us for about two years in a BOX. Our kids encouraged us to start writing. Our wives definitely gave us the courage to stop writing. They had a hard time fighting the symptoms of a rapidly developing SOl allergy.
Author: V. K. Jain
Publisher: Springer Science & Business Media
ISBN: 3319030027
Category : Science
Languages : en
Pages : 841
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Book Description
The purpose of this workshop is to spread the vast amount of information available on semiconductor physics to every possible field throughout the scientific community. As a result, the latest findings, research and discoveries can be quickly disseminated. This workshop provides all participating research groups with an excellent platform for interaction and collaboration with other members of their respective scientific community. This workshop’s technical sessions include various current and significant topics for applications and scientific developments, including • Optoelectronics • VLSI & ULSI Technology • Photovoltaics • MEMS & Sensors • Device Modeling and Simulation • High Frequency/ Power Devices • Nanotechnology and Emerging Areas • Organic Electronics • Displays and Lighting Many eminent scientists from various national and international organizations are actively participating with their latest research works and also equally supporting this mega event by joining the various organizing committees.
Author: Christian Piguet
Publisher: CRC Press
ISBN: 1351836609
Category : Technology & Engineering
Languages : en
Pages : 499
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Book Description
The power consumption of microprocessors is one of the most important challenges of high-performance chips and portable devices. In chapters drawn from Piguet's recently published Low-Power Electronics Design, Low-Power CMOS Circuits: Technology, Logic Design, and CAD Tools addresses the design of low-power circuitry in deep submicron technologies. It provides a focused reference for specialists involved in designing low-power circuitry, from transistors to logic gates. The book is organized into three broad sections for convenient access. The first examines the history of low-power electronics along with a look at emerging and possible future technologies. It also considers other technologies, such as nanotechnologies and optical chips, that may be useful in designing integrated circuits. The second part explains the techniques used to reduce power consumption at low levels. These include clock gating, leakage reduction, interconnecting and communication on chips, and adiabatic circuits. The final section discusses various CAD tools for designing low-power circuits. This section includes three chapters that demonstrate the tools and low-power design issues at three major companies that produce logic synthesizers. Providing detailed examinations contributed by leading experts, Low-Power CMOS Circuits: Technology, Logic Design, and CAD Tools supplies authoritative information on how to design and model for high performance with low power consumption in modern integrated circuits. It is a must-read for anyone designing modern computers or embedded systems.
Author: Enrico Prati
Publisher: CRC Press
ISBN: 9814316695
Category : Science
Languages : en
Pages : 374
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Book Description
Single-Atom Nanoelectronics covers the fabrication of single-atom devices and related technology, as well as the relevant electronic equipment and the intriguing new phenomena related to single-atom and single-electron effects in quantum devices. It also covers the alternative approaches related to both silicon- and carbon-based technologies, also
Author: Yuhua Cheng
Publisher: Springer Science & Business Media
ISBN: 0306470500
Category : Technology & Engineering
Languages : en
Pages : 467
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Book Description
Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) has been selected as the first MOSFET model for standardization by the Compact Model Council, a consortium of leading companies in semiconductor and design tools. In the next few years, many fabless and integrated semiconductor companies are expected to switch from dozens of other MOSFET models to BSIM3. This will require many device engineers and most circuit designers to learn the basics of BSIM3. MOSFET Modeling & BSIM3 User's Guide explains the detailed physical effects that are important in modeling MOSFETs, and presents the derivations of compact model expressions so that users can understand the physical meaning of the model equations and parameters. It is the first book devoted to BSIM3. It treats the BSIM3 model in detail as used in digital, analog and RF circuit design. It covers the complete set of models, i.e., I-V model, capacitance model, noise model, parasitics model, substrate current model, temperature effect model and non quasi-static model. MOSFET Modeling & BSIM3 User's Guide not only addresses the device modeling issues but also provides a user's guide to the device or circuit design engineers who use the BSIM3 model in digital/analog circuit design, RF modeling, statistical modeling, and technology prediction. This book is written for circuit designers and device engineers, as well as device scientists worldwide. It is also suitable as a reference for graduate courses and courses in circuit design or device modelling. Furthermore, it can be used as a textbook for industry courses devoted to BSIM3. MOSFET Modeling & BSIM3 User's Guide is comprehensive and practical. It is balanced between the background information and advanced discussion of BSIM3. It is helpful to experts and students alike.
Author: Tibor Grasser
Publisher: Springer Nature
ISBN: 3030375005
Category : Technology & Engineering
Languages : en
Pages : 724
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Book Description
This book summarizes the state-of-the-art, regarding noise in nanometer semiconductor devices. Readers will benefit from this leading-edge research, aimed at increasing reliability based on physical microscopic models. Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects. Describes the state-of-the-art, regarding noise in nanometer semiconductor devices; Enables readers to design more reliable semiconductor devices; Offers the most up-to-date information on point defects, based on physical microscopic models.
Author:
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 2540
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Book Description
Author: J.-P. Colinge
Publisher: Springer Science & Business Media
ISBN: 1475726112
Category : Technology & Engineering
Languages : en
Pages : 277
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Book Description
Silicon-on-Insulator Technology: Materials to VLSI, 2nd Edition describes the different facets of SOI technology. SOI chips are now commercially available and SOI wafer manufacturers have gone public. SOI has finally made it out of the academic world and is now a big concern for every major semiconductor company. SOI technology has indeed deserved serious recognition: high-temperature (400°C), extremely rad-hard (500 Mrad(Si)), high-density (16 Mb, 0.9-volt DRAM), high-speed (several GHz) and low-voltage (0.5 V) SOI circuits have been demonstrated. Strategic choices in favor of the use of SOI for low-voltage, low-power portable systems have been made by several major semiconductor manufacturers. Silicon-on-Insulator Technology: Materials to VLSI, 2nd Edition presents a complete and state-of-the-art review of SOI materials, devices and circuits. SOI fabrication and characterization techniques, SOI device processing, the physics of the SOI MOSFET as well as that of SOI other devices, and the performances of SOI circuits are discussed in detail. The SOI specialist will find this book invaluable as a source of compiled references covering the different aspects of SOI technology. For the non-specialist, the book serves as an excellent introduction to the topic with detailed, yet simple and clear explanations. Silicon-on-Insulator Technology: Materials to VLSI, 2nd Edition is recommended for use as a textbook for classes on semiconductor device processing and physics. The level of the book is appropriate for teaching at both the undergraduate and graduate levels. Silicon-on-Insulator Technology: Materials to VLSI, 2nd Edition includes the new materials, devices, and circuit concepts which have been devised since the publication of the first edition. The circuit sections, in particular, have been updated to present the performances of SOI devices for low-voltage, low-power applications, as well as for high-temperature, smart-power, and DRAM applications. The other sections, such as those describing SOI materials, the physics of the SOI MOSFET and other devices have been updated to present the state of the art in SOI technology.
Author: Christian Piguet
Publisher: CRC Press
ISBN: 1420039555
Category : Technology & Engineering
Languages : en
Pages : 896
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Book Description
The power consumption of integrated circuits is one of the most problematic considerations affecting the design of high-performance chips and portable devices. The study of power-saving design methodologies now must also include subjects such as systems on chips, embedded software, and the future of microelectronics. Low-Power Electronics Design covers all major aspects of low-power design of ICs in deep submicron technologies and addresses emerging topics related to future design. This volume explores, in individual chapters written by expert authors, the many low-power techniques born during the past decade. It also discusses the many different domains and disciplines that impact power consumption, including processors, complex circuits, software, CAD tools, and energy sources and management. The authors delve into what many specialists predict about the future by presenting techniques that are promising but are not yet reality. They investigate nanotechnologies, optical circuits, ad hoc networks, e-textiles, as well as human powered sources of energy. Low-Power Electronics Design delivers a complete picture of today's methods for reducing power, and also illustrates the advances in chip design that may be commonplace 10 or 15 years from now.
