Laser Annealing of Ion Implanted CZ Silicon for Solar Cell Junction Formation

Laser Annealing of Ion Implanted CZ Silicon for Solar Cell Junction Formation PDF Author: J. S. Katzeff
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ISBN:
Category : Silicon solar cells
Languages : en
Pages : 36

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Laser Annealing of Ion Implanted CZ Silicon for Solar Cell Junction Formation

Laser Annealing of Ion Implanted CZ Silicon for Solar Cell Junction Formation PDF Author: J. S. Katzeff
Publisher:
ISBN:
Category : Silicon solar cells
Languages : en
Pages : 36

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Laser Annealing of Ion Implanted CZ Silicon for Solar Cell Junction Formation

Laser Annealing of Ion Implanted CZ Silicon for Solar Cell Junction Formation PDF Author:
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Category :
Languages : en
Pages :

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Results on a contract to evaluate the merits of large spot size pulsed laser annealing of ion implanted silicon wafers for junction formation of solar cells are presented. Three inch diameter cells were fabricated for reference by furnace annealing of the ion implanted wafers. Conversion efficiencies on these cells ranged from 12.3% to 14.3%, with and without a BSF. Scaled-up size cells, from 2 x 2 cm to 2 x 4 cm, were fabricated using a two-step 25% overlap pulsed laser annealing process. Conversion efficiencies up to 15.4% were achieved. Pulsed laser annealing of textured surface wafers proved unacceptable based on the subpar electrical performances of fabricated 2 x 2 cm and 2 x 4 cm cells. Further laser annealing work using textured surfaces has been discontinued. SIMS profiling of 11B and/or 49BF2 ion implanted species for back surface field followed by pulse annealing, both by electron beam and laser, revealed that additional work is required for optimization. The process verification phase of the contract was initiated for small (2 x 2 cm) and large (3 in. dia) cells using the surviving processing candidates showing best promise. A high throughput laser system was conceptualized which will accommodate three (3) inch diameter wafers at a rate of one per second.

Laser Annealing of Ion Implanted CZ Silicon for Solar Cell Junction Formation

Laser Annealing of Ion Implanted CZ Silicon for Solar Cell Junction Formation PDF Author: J. S. Katzeff
Publisher:
ISBN:
Category : Silicon solar cells
Languages : en
Pages : 25

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Laser Annealing of Ion Implanted CZ Silicon for Solar Cell Junction Formation. Quarterly Report

Laser Annealing of Ion Implanted CZ Silicon for Solar Cell Junction Formation. Quarterly Report PDF Author:
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Category :
Languages : en
Pages :

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A project to evaluate the merits of large spot size pulsed laser annealing of ion implanted silicon wafers for junction formation on solar cells is described. A Q-switched Nd:Glass laser system is used operating in the 1064 (regular) and 532 (with frequency doubler) nm wavelengths. The laser output is in excess of 30 joules with a 20 to 50 ns pulse duration. Material used in this investigation is 3-inch diameter CZ silicon, P-type 0.014 inches thick, 10.cap omega.-cm resistivity, 100 orientation. Three wafer surface conditions are being evaluated in this pulse annealing investigation: chem-polished, texture etched, and flash etched. Annealing was performed with and without beam homogenization. Both modes showed excellent lattice recovery from the implant-induced damage as analyzed using Rutherford backscattering techniques. Homogenization of the beam was performed using a fused silica rod configured with a 90° bend. The unhomogenized annealing was performed using a plano-concave lens. Fabrication of laser annealed cells using both modes is forthcoming.

Laser Annealing of Ion Implanted CZ Silicon for Solar Cell Junction Formation

Laser Annealing of Ion Implanted CZ Silicon for Solar Cell Junction Formation PDF Author: J. S. Katzeff
Publisher:
ISBN:
Category :
Languages : en
Pages : 17

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Laser Annealing of Ion Implanted CZ Silicon for Solar Cell Junction Formation

Laser Annealing of Ion Implanted CZ Silicon for Solar Cell Junction Formation PDF Author: J. S. Katzeff
Publisher:
ISBN:
Category :
Languages : en
Pages : 28

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Laser Annealing of Ion Implanted CZ Silicon for Solar Cell Junction Formation. Quarterly Report

Laser Annealing of Ion Implanted CZ Silicon for Solar Cell Junction Formation. Quarterly Report PDF Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :

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Book Description
Results on a contract to evaluate the merits of large spot size pulsed laser annealing of ion implanted silicon wafers for junction formation in solar cells are reported. Investigations on homogenization of the laser beam were continued. In addition to the 30 mm diameter fused silica rod with a 90° bend configuration, quartz tubes were obtained and briefly tried. Best results were obtained with the rod homogenizer. Laser annealing experimentation resulted in complete recrystallization of ion implanted silicon substrates as confirmed by TEM and RBS analysis. Single pulse laser annealed, functional cells (2 x 2cm) were fabricated using varying process conditions, yielding conversion efficiencies predominantly in the 13% to slightly less than 15%.

Laser Annealing of Ion Implanted CZ Silicon for Solar Cell Junction Formation

Laser Annealing of Ion Implanted CZ Silicon for Solar Cell Junction Formation PDF Author: J. S. Katzeff
Publisher:
ISBN:
Category : Silicon solar cells
Languages : en
Pages : 25

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Laser Annealing of Ion Implanted Silicon for Solar Cell Junction Formation

Laser Annealing of Ion Implanted Silicon for Solar Cell Junction Formation PDF Author: Lockheed Missiles and Space Company
Publisher:
ISBN:
Category : Solar cells
Languages : en
Pages : 68

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Solar Energy Update

Solar Energy Update PDF Author:
Publisher:
ISBN:
Category : Solar energy
Languages : en
Pages : 680

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