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Author: S. Coffa
Publisher: Newnes
ISBN: 044459972X
Category : Science
Languages : en
Pages : 1031
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Book Description
The aim of these proceedings is to present and stimulate discussion on the many subjects related to ion implantation among a broad mix of specialists from areas as diverse as materials science, device production and advanced ion implanters.The contents open with a paper on the future developments of the microelectronics industry in Europe within the framework of the global competition. The subsequent invited and oral presentations cover in detail the following areas: trends in processing and devices, ion-solid interaction, materials science issues, advanced implanter systms, process control and yield, future trends and applications.
Author: S. Coffa
Publisher: Newnes
ISBN: 044459972X
Category : Science
Languages : en
Pages : 1031
Get Book Here
Book Description
The aim of these proceedings is to present and stimulate discussion on the many subjects related to ion implantation among a broad mix of specialists from areas as diverse as materials science, device production and advanced ion implanters.The contents open with a paper on the future developments of the microelectronics industry in Europe within the framework of the global competition. The subsequent invited and oral presentations cover in detail the following areas: trends in processing and devices, ion-solid interaction, materials science issues, advanced implanter systms, process control and yield, future trends and applications.
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 704
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Book Description
Author: Peter Pichler
Publisher: Springer Science & Business Media
ISBN: 3709105978
Category : Technology & Engineering
Languages : en
Pages : 576
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Book Description
This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Author: Michael I. Current
Publisher:
ISBN:
Category : Ion implantation
Languages : en
Pages : 260
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Book Description
Author:
Publisher:
ISBN:
Category : Technology
Languages : en
Pages : 152
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Book Description
Author:
Publisher:
ISBN:
Category : NASA tech briefs
Languages : en
Pages : 160
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Book Description
Author: Robert Hull
Publisher: IET
ISBN: 9780852969335
Category : Science
Languages : en
Pages : 1054
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Book Description
A unique and well-organized reference, this book provides illuminating data, distinctive insight and expert guidance on silicon properties.
Author:
Publisher:
ISBN:
Category : Nuclear physics
Languages : en
Pages : 940
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Book Description
Author: George E. Totten
Publisher: CRC Press
ISBN: 9780203021545
Category : Science
Languages : en
Pages : 776
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Book Description
Navigating through an extensive compilation of surface modification reactions and processes for specific tribological results, this reference compiles detailed studies, many not found in other texts, on various residual stresses, reaction processes and mechanisms, heat treatment methods, plasma-based techniques, laser impingement, nanometer scale surface modification, and more. Surface Modification and Mechanisms: Friction, Stress, and Reaction Engineering offers guidelines for the consideration and design of wear and frictional performance and provides a unique understanding of surface structural changes that occur during various engineering procedures.
Author: H. Ryssel
Publisher: Springer Science & Business Media
ISBN: 3642687792
Category : Science
Languages : en
Pages : 377
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Book Description
In recent years, ion implantation has developed into the major doping technique for integrated circuits. Several series of conferences have dealt with the application of ion implantation to semiconductors and other materials (Thousand Oaks 1970, Garmisch-Partenkirchen 1971, Osaka 1974, Warwick 1975, Boulder 1976, Budapest 1978, and Albany 1980). Another series of conferences was devoted more to implantation equipment and tech niques (Salford 1977, Trento 1978, and Kingston 1980). In connection with the Third International Conference on Ion Implantation: Equipment and Tech niques, held at Queen's University, ' Kingston, Ontario, Canada, July 8-11, 1980, a two-day instructional program was organized parallel to an implan tation conference for the first time. This implantation school concentra ted on aspects of implantation-equipment design. This book contains all lectures presented at the International Ion Implantation School organized in connection with the Fourth International Conference on Ion Implantation: Equipment and Techniques, held at the Convention Center, Berchtesgaden, Germany, September 13-17, 1982. In con trast to the first .school, the main emphasis in thiS school was placed on practical aspects of implanter operation and application. In three chap ters, various machine aspects of ion implantation (general concepts, ion sources, safety, calibration, dOSimetry), range distributions (stopping power, range profiles), and measuring techniques (electrical and nonelec tri ca 1 measu ri ng techni ques, annea 1 i ng) are di scussed. In the appendi x, a review of the state of the art in modern implantation equipment is given.
