Investigation of Resistive Switching in Barium Strontium Titanate Thin Films for Memory Applications PDF Download
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Author: Wan Shen
Publisher: Forschungszentrum Jülich
ISBN: 3893366083
Category :
Languages : en
Pages : 129
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Book Description
Author: Wan Shen
Publisher: Forschungszentrum Jülich
ISBN: 3893366083
Category :
Languages : en
Pages : 129
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Book Description
Author: Lin Yang
Publisher: Forschungszentrum Jülich
ISBN: 3893367071
Category :
Languages : en
Pages : 141
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Book Description
Author: Christian Nauenheim
Publisher: Forschungszentrum Jülich
ISBN: 3893366369
Category :
Languages : en
Pages : 159
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Book Description
Author: Alexandre Kisner
Publisher: Forschungszentrum Jülich
ISBN: 3893368248
Category :
Languages : en
Pages : 193
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Book Description
Author: Bastian Arlt
Publisher: Forschungszentrum Jülich
ISBN: 3893368191
Category :
Languages : en
Pages : 217
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Book Description
Author: Marcel Manheller
Publisher: Forschungszentrum Jülich
ISBN: 3893368108
Category :
Languages : en
Pages : 215
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Book Description
Zsfassung in dt. u. engl. Sprache
Author: Christoph Johannes Urban
Publisher: Forschungszentrum Jülich
ISBN: 389336644X
Category :
Languages : en
Pages : 169
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Book Description
Author: Lesley Jane Grattan
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Author: Spartak Gevorgian
Publisher: Springer Science & Business Media
ISBN: 1848825072
Category : Technology & Engineering
Languages : en
Pages : 405
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Book Description
Today’s wireless communications and information systems are heavily based on microwave technology. Current trends indicate that in the future along with - crowaves, the millimeter wave and Terahertz technologies will be used to meet the growing bandwidth and overall performance requirements. Moreover, motivated by the needs of the society, new industry sectors are gaining ground; such as wi- less sensor networks, safety and security systems, automotive, medical, envir- mental/food monitoring, radio tags etc. Furthermore, the progress and the pr- lems in the modern society indicate that in the future these systems have to be more user/consumer friendly, i. e. adaptable, reconfigurable and cost effective. The mobile phone is a typical example which today is much more than just a phone; it includes a range of new functionalities such as Internet, GPS, TV, etc. To handle, in a cost effective way, all available and new future standards, the growing n- ber of the channels and bandwidth both the mobile handsets and the associated systems have to be agile (adaptable/reconfigurable). The complex societal needs have initiated considerable activities in the field of cognitive and software defined radios and triggered extensive research in adequate components and technology platforms. To meet the stringent requirements of these systems, especially in ag- ity and cost, new components with enhanced performances and new functionalities are needed. In this sense the components based on ferroelectrics have greater - tential and already are gaining ground.
Author: Jennifer Rupp
Publisher: Springer Nature
ISBN: 3030424243
Category : Technology & Engineering
Languages : en
Pages : 386
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Book Description
This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods, tuning thin film microstructures, and material/device characterization and modeling. A slate of world-renowned authors address the influence of type of ionic carriers, their mobility, the role of the local and chemical composition and environment, and facilitate readers’ understanding of the effects of composition and structure at different length scales (e.g., crystalline vs amorphous phases, impact of extended defects such as dislocations and grain boundaries). ReRAMs show outstanding potential for scaling down to the atomic level, fast operation in the nanosecond range, low power consumption, and non-volatile storage. The book is ideal for materials scientists and engineers concerned with novel types of nanoelectronic devices such as memories, memristors, and switches for logic and neuromorphic computing circuits beyond the von Neumann concept.
