Investigation of Current Controlled L.P.E. of InP by Electromigration

Investigation of Current Controlled L.P.E. of InP by Electromigration PDF Author: H. Barteld Van Rees
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 402

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Investigation of Current Controlled L.P.E. of InP by Electromigration

Investigation of Current Controlled L.P.E. of InP by Electromigration PDF Author: H. Barteld Van Rees
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 402

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Book Description


Dissertation Abstracts International

Dissertation Abstracts International PDF Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 584

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Annual Report to the President

Annual Report to the President PDF Author: Cornell University. College of Engineering
Publisher:
ISBN:
Category : Engineering
Languages : en
Pages : 1332

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Newsletter

Newsletter PDF Author: Cornell University. Engineering Library
Publisher:
ISBN:
Category : Engineering
Languages : en
Pages : 576

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Gallium Arsenide and Related Compounds

Gallium Arsenide and Related Compounds PDF Author:
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 780

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Scientific and Technical Aerospace Reports

Scientific and Technical Aerospace Reports PDF Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 756

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Book Description
Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.

Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials

Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials PDF Author: Peter Capper
Publisher: Wiley-Interscience
ISBN:
Category : Science
Languages : en
Pages : 472

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Book Description
Liquid-Phase Epitaxy (LPE) is a technique used in the bulk growth of crystals, typically in semiconductor manufacturing, whereby the crystal is grown from a rich solution of the semiconductor onto a substrate in layers, each of which is formed by supersaturation or cooling. At least 50% of growth in the optoelectronics area is currently focussed on LPE. This book covers the bulk growth of semiconductors, i.e. silicon, gallium arsenide, cadmium mercury telluride, indium phosphide, indium antimonide, gallium nitride, cadmium zinc telluride, a range of wide-bandgap II-VI compounds, diamond and silicon carbide, and a wide range of oxides/fluorides (including sapphire and quartz) that are used in many industrial applications. A separate chapter is devoted to the fascinating field of growth in various forms of microgravity, an activity that is approximately 30-years old and which has revealed many interesting features, some of which have been very surprising to experimenters and theoreticians alike. Covers the most important materials within the field The contributors come from a wide variety of countries and include both academics and industrialists, to give a balanced treatment Builds-on an established series known in the community Highly pertinent to current and future developments in telecommunications and computer-processing industries.

CRC Handbook of Metal Etchants

CRC Handbook of Metal Etchants PDF Author: Perrin Walker
Publisher: CRC Press
ISBN: 9781439822531
Category : Science
Languages : en
Pages : 1434

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Book Description
This publication presents cleaning and etching solutions, their applications, and results on inorganic materials. It is a comprehensive collection of etching and cleaning solutions in a single source. Chemical formulas are presented in one of three standard formats - general, electrolytic or ionized gas formats - to insure inclusion of all necessary operational data as shown in references that accompany each numbered formula. The book describes other applications of specific solutions, including their use on other metals or metallic compounds. Physical properties, association of natural and man-made minerals, and materials are shown in relationship to crystal structure, special processing techniques and solid state devices and assemblies fabricated. This publication also presents a number of organic materials which are widely used in handling and general processing...waxes, plastics, and lacquers for example. It is useful to individuals involved in study, development, and processing of metals and metallic compounds. It is invaluable for readers from the college level to industrial R & D and full-scale device fabrication, testing and sales. Scientific disciplines, work areas and individuals with great interest include: chemistry, physics, metallurgy, geology, solid state, ceramic and glass, research libraries, individuals dealing with chemical processing of inorganic materials, societies and schools.

Research in Materials

Research in Materials PDF Author: Massachusetts Institute of Technology
Publisher:
ISBN:
Category : Materials
Languages : en
Pages : 474

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Semiconductor Device Reliability

Semiconductor Device Reliability PDF Author: A. Christou
Publisher: Springer Science & Business Media
ISBN: 9400924828
Category : Technology & Engineering
Languages : en
Pages : 571

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Book Description
This publication is a compilation of papers presented at the Semiconductor Device Reliabi lity Workshop sponsored by the NATO International Scientific Exchange Program. The Workshop was held in Crete, Greece from June 4 to June 9, 1989. The objective of the Workshop was to review and to further explore advances in the field of semiconductor reliability through invited paper presentations and discussions. The technical emphasis was on quality assurance and reliability of optoelectronic and high speed semiconductor devices. The primary support for the meeting was provided by the Scientific Affairs Division of NATO. We are indebted to NATO for their support and to Dr. Craig Sinclair, who admin isters this program. The chapters of this book follow the format and order of the sessions of the meeting. Thirty-six papers were presented and discussed during the five-day Workshop. In addi tion, two panel sessions were held, with audience participation, where the particularly controversial topics of bum-in and reliability modeling and prediction methods were dis cussed. A brief review of these sessions is presented in this book.