Author: Martin Paul Geller
Publisher:
ISBN:
Category :
Languages : en
Pages : 140

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Author: Tobias Nowozin
Publisher: Springer Science & Business Media
ISBN: 3319019708
Category : Technology & Engineering
Languages : en
Pages : 163

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Book Description
Today’s semiconductor memory market is divided between two types of memory: DRAM and Flash. Each has its own advantages and disadvantages. While DRAM is fast but volatile, Flash is non-volatile but slow. A memory system based on self-organized quantum dots (QDs) as storage node could combine the advantages of modern DRAM and Flash, thus merging the latter’s non-volatility with very fast write times. This thesis investigates the electronic properties of and carrier dynamics in self-organized quantum dots by means of time-resolved capacitance spectroscopy and time-resolved current measurements. The first aim is to study the localization energy of various QD systems in order to assess the potential of increasing the storage time in QDs to non-volatility. Surprisingly, it is found that the major impact of carrier capture cross-sections of QDs is to influence, and at times counterbalance, carrier storage in addition to the localization energy. The second aim is to study the coupling between a layer of self-organized QDs and a two-dimensional hole gas (2DHG), which is relevant for the read-out process in memory systems. The investigation yields the discovery of the many-particle ground states in the QD ensemble. In addition to its technological relevance, the thesis also offers new insights into the fascinating field of nanostructure physics.

Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 166

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Author: Zhiming M Wang
Publisher: Springer Science & Business Media
ISBN: 0387741917
Category : Technology & Engineering
Languages : en
Pages : 470

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Book Description
This multidisciplinary book provides up-to-date coverage of carrier and spin dynamics and energy transfer and structural interaction among nanostructures. Coverage also includes current device applications such as quantum dot lasers and detectors, as well as future applications to quantum information processing. The book will serve as a reference for anyone working with or planning to work with quantum dots.

Author: Gary Wang
Publisher:
ISBN:
Category :
Languages : en
Pages : 194

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Book Description

Author: Peter A. Ling
Publisher: Nova Publishers
ISBN: 9781594544064
Category : Science
Languages : en
Pages : 278

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Book Description
A quantum dot is a particle of matter so small that the addition or removal of an electron changes its properties in some useful way. All atoms are quantum dots, but multi-molecular combinations can have this characteristic. In biochemistry, quantum dots are called redox groups. In nanotechnology, they are called quantum bits or qubits. Quantum dots typically have dimensions measured in nanometers, where one nanometer is 10-9 meter or a millionth of a millimetre. The fields of biology, chemistry, computer science, and electronics are all of interest to researchers in nanotechnology. Other applications of quantum dots include nanomachines, neural networks, and high-density memory or storage media. Research is being carried out on nano-crystals, self-assembled dots, and gated structures. This book presents leading-edge research from around the world.

Author:
Publisher: Academic Press
ISBN: 0080864589
Category : Technology & Engineering
Languages : en
Pages : 385

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Book Description
This volume is concerned with the crystal growth, optical properties, and optical device application of the self-formed quantum dot, which is one of the major current subjects in the semiconductor research field.The atom-like density of states in quantum dots is expected to drastically improve semiconductor laser performance, and to develop new optical devices. However, since the first theoretical prediction for its great possibilities was presented in 1982, due to the difficulty of their fabrication process. Recently, the advent of self-organized quantum dots has made it possible to apply the results in important optical devices, and further progress is expected in the near future.The authors, working for Fujitsu Laboratories, are leading this quantum-dot research field. In this volume, they describe the state of the art in the entire field, with particular emphasis on practical applications.

Author: Zhiming M. Wang
Publisher: Springer
ISBN: 9780387520629
Category : Technology & Engineering
Languages : en
Pages : 468

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Book Description
This multidisciplinary book provides up-to-date coverage of carrier and spin dynamics and energy transfer and structural interaction among nanostructures. Coverage also includes current device applications such as quantum dot lasers and detectors, as well as future applications to quantum information processing. The book will serve as a reference for anyone working with or planning to work with quantum dots.

Author: 蘇立杰
Publisher:
ISBN:
Category :
Languages : en
Pages : 85

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Book Description

Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 34

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Book Description
The authors have performed a comprehensive set of experiments on the dynamics of electrons and holes in semiconductor quantum dots, and a complete picture of the dynamics as a function of carrier density and temperature has emerged. Specifically, they have used two- and three-pulse femtosecond differential transmission spectroscopy to study the dependence of quantum dot carrier dynamics on temperature. At low temperatures and densities, the rates for relaxation between the quantum dot confined states and for capture from the barrier region into the various dot levels could be directly determined. For electron-hole pairs generated directly in the quantum dot excited state, relaxation is dominated by electron-hole scattering, and occurs on a 5-ps time scale. Capture times from the barrier into the quantum dot are on the order of 2 ps (into the excited state) and 10 ps (into the ground state). The phonon bottleneck was clearly observed in low-density capture experiments, and the conditions for its observation (namely, the suppression of electron-hole scattering for non-geminately captured electrons) were determined. As temperature increases beyond about 100 K, the dynamics become dominated by the reemission of carriers from the lower dot levels due to the large density of states in the wetting layer and barrier region. Measurements of the gain dynamics show fast (130-fs) gain recovery due to intradot carrier-carrier scattering, and picosecond-scale capture. Direct measurement of the transparency density versus temperature shows the dramatic effect of carrier reemission for the quantum dots to thermally activated scattering. The carrier dynamics at elevated temperatures are thus strongly dominated by the high density of the high-energy continuum states relative to the dot-confined levels. Deleterious hot carrier effects can be suppressed in quantum dot lasers by resonant tunneling injection.