Author:
Publisher:
ISBN:
Category : Military research
Languages : en
Pages : 452
Book Description
AFOSR Technical Report Summaries
Author:
Publisher:
ISBN:
Category : Military research
Languages : en
Pages : 452
Book Description
Publisher:
ISBN:
Category : Military research
Languages : en
Pages : 452
Book Description
Thin Film Growth Techniques for Low-Dimensional Structures
Author: R.F.C. Farrow
Publisher: Springer Science & Business Media
ISBN: 1468491458
Category : Technology & Engineering
Languages : en
Pages : 548
Book Description
This work represents the account of a NATO Advanced Research Workshop on "Thin Film Growth Techniques for Low Dimensional Structures", held at the University of Sussex, Brighton, England from 15-19 Sept. 1986. The objective of the workshop was to review the problems of the growth and characterisation of thin semiconductor and metal layers. Recent advances in deposition techniques have made it possible to design new material which is based on ultra-thin layers and this is now posing challenges for scientists, technologists and engineers in the assessment and utilisation of such new material. Molecular beam epitaxy (MBE) has become well established as a method for growing thin single crystal layers of semiconductors. Until recently, MBE was confined to the growth of III-V compounds and alloys, but now it is being used for group IV semiconductors and II-VI compounds. Examples of such work are given in this volume. MBE has one major advantage over other crystal growth techniques in that the structure of the growing layer can be continuously monitored using reflection high energy electron diffraction (RHEED). This technique has offered a rare bonus in that the time dependent intensity variations of RHEED can be used to determine growth rates and alloy composition rather precisely. Indeed, a great deal of new information about the kinetics of crystal growth from the vapour phase is beginning to emerge.
Publisher: Springer Science & Business Media
ISBN: 1468491458
Category : Technology & Engineering
Languages : en
Pages : 548
Book Description
This work represents the account of a NATO Advanced Research Workshop on "Thin Film Growth Techniques for Low Dimensional Structures", held at the University of Sussex, Brighton, England from 15-19 Sept. 1986. The objective of the workshop was to review the problems of the growth and characterisation of thin semiconductor and metal layers. Recent advances in deposition techniques have made it possible to design new material which is based on ultra-thin layers and this is now posing challenges for scientists, technologists and engineers in the assessment and utilisation of such new material. Molecular beam epitaxy (MBE) has become well established as a method for growing thin single crystal layers of semiconductors. Until recently, MBE was confined to the growth of III-V compounds and alloys, but now it is being used for group IV semiconductors and II-VI compounds. Examples of such work are given in this volume. MBE has one major advantage over other crystal growth techniques in that the structure of the growing layer can be continuously monitored using reflection high energy electron diffraction (RHEED). This technique has offered a rare bonus in that the time dependent intensity variations of RHEED can be used to determine growth rates and alloy composition rather precisely. Indeed, a great deal of new information about the kinetics of crystal growth from the vapour phase is beginning to emerge.
Scientific and Technical Aerospace Reports
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 692
Book Description
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 692
Book Description
Modulated Structure Materials
Author: Thomas Tsakalakos
Publisher: Springer Science & Business Media
ISBN: 9400961952
Category : Technology & Engineering
Languages : en
Pages : 583
Book Description
Proceedings of the NATO Advanced Study Institute on Modulated Structure Materials, Maleme-Chania, Greece, June 15-25, 1983
Publisher: Springer Science & Business Media
ISBN: 9400961952
Category : Technology & Engineering
Languages : en
Pages : 583
Book Description
Proceedings of the NATO Advanced Study Institute on Modulated Structure Materials, Maleme-Chania, Greece, June 15-25, 1983
Energy Research Abstracts
Author:
Publisher:
ISBN:
Category : Power resources
Languages : en
Pages : 424
Book Description
Publisher:
ISBN:
Category : Power resources
Languages : en
Pages : 424
Book Description
Japanese Science and Technology
Author:
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 724
Book Description
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 724
Book Description
The Cumulative Book Index
Author:
Publisher:
ISBN:
Category : American literature
Languages : en
Pages : 3250
Book Description
A world list of books in the English language.
Publisher:
ISBN:
Category : American literature
Languages : en
Pages : 3250
Book Description
A world list of books in the English language.
Cryogenic Information Report
Author:
Publisher:
ISBN:
Category : Low temperature engineering
Languages : en
Pages : 620
Book Description
Publisher:
ISBN:
Category : Low temperature engineering
Languages : en
Pages : 620
Book Description
Physics Briefs
Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1162
Book Description
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1162
Book Description
Silicon Molecular Beam Epitaxy
Author: E. Kasper
Publisher: CRC Press
ISBN: 1351093525
Category : Technology & Engineering
Languages : en
Pages : 411
Book Description
This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Publisher: CRC Press
ISBN: 1351093525
Category : Technology & Engineering
Languages : en
Pages : 411
Book Description
This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.