International Conference on Extended Defects in Semiconductors, Held in Jaszowiec, Poland, on 6-11 September, 1998 PDF Download
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Languages : en
Pages : 0
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Partial Contents: Relaxation of misfit-induced strain in semiconductor heterostructures; Dislocations in relaxed SiGe/Si heterostructures; Misfit dislocations in epitaxial heterostructures: mechanisms of generation and multiplication; Dislocation mechanisms involved in the relaxation of heteroepitaxial semiconducting systems; Formation of dislocations in InGaAs/GaAs heterostructures; Quantum interference at misfit dislocations in III-V heterostructures; Crystalline defects as enhancement and limits to microminiaturization.
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Languages : en
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Partial Contents: Relaxation of misfit-induced strain in semiconductor heterostructures; Dislocations in relaxed SiGe/Si heterostructures; Misfit dislocations in epitaxial heterostructures: mechanisms of generation and multiplication; Dislocation mechanisms involved in the relaxation of heteroepitaxial semiconducting systems; Formation of dislocations in InGaAs/GaAs heterostructures; Quantum interference at misfit dislocations in III-V heterostructures; Crystalline defects as enhancement and limits to microminiaturization.
Author: Polska Akademia Nauk. Instytut Fizyki
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ISBN: 9788390492292
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Languages : en
Pages : 90
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Author: Tadeusz Wosiński
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Languages : en
Pages : 411
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Author: EDS Conference
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Category :
Languages : en
Pages : 407
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Category : Semiconductors
Languages : en
Pages : 0
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Category :
Languages : en
Pages : 244
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Author: International Conference on Defects in Semiconductors
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Category :
Languages : en
Pages : 399
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Category :
Languages : en
Pages : 367
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Author: International Conference on Defects in Semiconductors
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Languages : en
Pages :
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Author: International Conference on Defects in Semiconductors (17, 1993, Gmunden)
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Category :
Languages : en
Pages : 610
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