Interconnect Technology and Design for Gigascale Integration

Interconnect Technology and Design for Gigascale Integration PDF Author: Jeffrey A. Davis
Publisher: Springer Science & Business Media
ISBN: 1461504619
Category : Technology & Engineering
Languages : en
Pages : 417

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Book Description
This book is jointly authored by leading academic and industry researchers. The material is unique in that it spans IC interconnect topics ranging from IBM's revolutionary copper process to an in-depth exploration into interconnect-aware computer architectures.

Interconnect Technology and Design for Gigascale Integration

Interconnect Technology and Design for Gigascale Integration PDF Author: Jeffrey A. Davis
Publisher: Springer Science & Business Media
ISBN: 1461504619
Category : Technology & Engineering
Languages : en
Pages : 417

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Book Description
This book is jointly authored by leading academic and industry researchers. The material is unique in that it spans IC interconnect topics ranging from IBM's revolutionary copper process to an in-depth exploration into interconnect-aware computer architectures.

Integrated Interconnect Technologies for 3D Nanoelectronic Systems

Integrated Interconnect Technologies for 3D Nanoelectronic Systems PDF Author: Muhannad S. Bakir
Publisher: Artech House
ISBN: 1596932473
Category : Technology & Engineering
Languages : en
Pages : 551

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Book Description
This cutting-edge book on off-chip technologies puts the hottest breakthroughs in high-density compliant electrical interconnects, nanophotonics, and microfluidics at your fingertips, integrating the full range of mathematics, physics, and technology issues together in a single comprehensive source. You get full details on state-of-the-art I/O interconnects and packaging, including mechanically compliant I/O approaches, fabrication, and assembly, followed by the latest advances and applications in power delivery design, analysis, and modeling. The book explores interconnect structures, materials, and packages for achieving high-bandwidth off-chip electrical communication, including optical interconnects and chip-to-chip signaling approaches, and brings you up to speed on CMOS integrated optical devices, 3D integration, wafer stacking technology, and through-wafer interconnects.

Integrated Circuit and System Design. Power and Timing Modeling, Optimization, and Simulation

Integrated Circuit and System Design. Power and Timing Modeling, Optimization, and Simulation PDF Author: Rene van Leuken
Publisher: Springer
ISBN: 3642177522
Category : Computers
Languages : en
Pages : 260

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Book Description
This book constitutes the refereed proceedings of the 20th International Conference on Integrated Circuit and System Design, PATMOS 2010, held in Grenoble, France, in September 2010. The 24 revised full papers presented and the 9 extended abstracts were carefully reviewed and are organized in topical sections on design flows; circuit techniques; low power circuits; self-timed circuits; process variation; high-level modeling of poweraware heterogeneous designs in SystemC-AMS; and minalogic.

Advanced Field-Solver Techniques for RC Extraction of Integrated Circuits

Advanced Field-Solver Techniques for RC Extraction of Integrated Circuits PDF Author: Wenjian Yu
Publisher: Springer Science & Business
ISBN: 3642542980
Category : Technology & Engineering
Languages : en
Pages : 246

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Book Description
Resistance and capacitance (RC) extraction is an essential step in modeling the interconnection wires and substrate coupling effect in nanometer-technology integrated circuits (IC). The field-solver techniques for RC extraction guarantee the accuracy of modeling, and are becoming increasingly important in meeting the demand for accurate modeling and simulation of VLSI designs. Advanced Field-Solver Techniques for RC Extraction of Integrated Circuits presents a systematic introduction to, and treatment of, the key field-solver methods for RC extraction of VLSI interconnects and substrate coupling in mixed-signal ICs. Various field-solver techniques are explained in detail, with real-world examples to illustrate the advantages and disadvantages of each algorithm. This book will benefit graduate students and researchers in the field of electrical and computer engineering as well as engineers working in the IC design and design automation industries. Dr. Wenjian Yu is an Associate Professor at the Department of Computer Science and Technology at Tsinghua University in China; Dr. Xiren Wang is a R&D Engineer at Cadence Design Systems in the USA.

Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications

Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications PDF Author: Yosi Shacham-Diamand
Publisher: Springer Science & Business Media
ISBN: 0387958681
Category : Science
Languages : en
Pages : 552

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Book Description
In Advanced ULSI interconnects – fundamentals and applications we bring a comprehensive description of copper-based interconnect technology for ultra-lar- scale integration (ULSI) technology for integrated circuit (IC) application. In- grated circuit technology is the base for all modern electronics systems. You can ?nd electronics systems today everywhere: from toys and home appliances to a- planes and space shuttles. Electronics systems form the hardware that together with software are the bases of the modern information society. The rapid growth and vast exploitation of modern electronics system create a strong demand for new and improved electronic circuits as demonstrated by the amazing progress in the ?eld of ULSI technology. This progress is well described by the famous “Moore’s law” which states, in its most general form, that all the metrics that describe integrated circuit performance (e. g. , speed, number of devices, chip area) improve expon- tially as a function of time. For example, the number of components per chip d- bles every 18 months and the critical dimension on a chip has shrunk by 50% every 2 years on average in the last 30 years. This rapid growth in integrated circuits te- nology results in highly complex integrated circuits with an increasing number of interconnects on chips and between the chip and its package. The complexity of the interconnect network on chips involves an increasing number of metal lines per interconnect level, more interconnect levels, and at the same time a reduction in the interconnect line critical dimensions.

Three-Dimensional Integrated Circuit Design

Three-Dimensional Integrated Circuit Design PDF Author: Vasilis F. Pavlidis
Publisher: Newnes
ISBN: 0124104843
Category : Technology & Engineering
Languages : en
Pages : 768

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Book Description
Three-Dimensional Integrated Circuit Design, Second Eition, expands the original with more than twice as much new content, adding the latest developments in circuit models, temperature considerations, power management, memory issues, and heterogeneous integration. 3-D IC experts Pavlidis, Savidis, and Friedman cover the full product development cycle throughout the book, emphasizing not only physical design, but also algorithms and system-level considerations to increase speed while conserving energy. A handy, comprehensive reference or a practical design guide, this book provides effective solutions to specific challenging problems concerning the design of three-dimensional integrated circuits. Expanded with new chapters and updates throughout based on the latest research in 3-D integration: Manufacturing techniques for 3-D ICs with TSVs Electrical modeling and closed-form expressions of through silicon vias Substrate noise coupling in heterogeneous 3-D ICs Design of 3-D ICs with inductive links Synchronization in 3-D ICs Variation effects on 3-D ICs Correlation of WID variations for intra-tier buffers and wires Offers practical guidance on designing 3-D heterogeneous systems Provides power delivery of 3-D ICs Demonstrates the use of 3-D ICs within heterogeneous systems that include a variety of materials, devices, processors, GPU-CPU integration, and more Provides experimental case studies in power delivery, synchronization, and thermal characterization

Transactions on High-Performance Embedded Architectures and Compilers IV

Transactions on High-Performance Embedded Architectures and Compilers IV PDF Author: Per Stenström
Publisher: Springer Science & Business Media
ISBN: 3642245676
Category : Computers
Languages : en
Pages : 446

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Book Description
Transactions on HiPEAC aims at the timely dissemination of research contributions in computer architecture and compilation methods for high-performance embedded computer systems. Recognizing the convergence of embedded and general-purpose computer systems, this journal publishes original research on systems targeted at specific computing tasks as well as systems with broad application bases. The scope of the journal therefore covers all aspects of computer architecture, code generation and compiler optimization methods of interest to researchers and practitioners designing future embedded systems. This 4th issue contains 21 papers carefully reviewed and selected out of numerous submissions and is divided in four sections. The first section contains five regular papers. The second section consists of the top four papers from the 4th International Conference on High-Performance Embedded Architectures and Compilers, HiPEAC 2009, held in Paphos, Cyprus, in January 2009. The third section contains a set of six papers providing a snap-shot from the Workshop on Software and Hardware Challenges of Manycore Platforms, SHCMP 2008 held in Beijing, China, in June 2008. The fourth section consists of six papers from the 8th IEEE International Symposium on Systems, Architectures, Modeling and Simulation, SAMOS VIII (2008) held in Samos, Greece, in July 2008.

Introduction to Microelectronics to Nanoelectronics

Introduction to Microelectronics to Nanoelectronics PDF Author: Manoj Kumar Majumder
Publisher: CRC Press
ISBN: 1000223078
Category : Science
Languages : en
Pages : 373

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Book Description
Focussing on micro- and nanoelectronics design and technology, this book provides thorough analysis and demonstration, starting from semiconductor devices to VLSI fabrication, designing (analog and digital), on-chip interconnect modeling culminating with emerging non-silicon/ nano devices. It gives detailed description of both theoretical as well as industry standard HSPICE, Verilog, Cadence simulation based real-time modeling approach with focus on fabrication of bulk and nano-devices. Each chapter of this proposed title starts with a brief introduction of the presented topic and ends with a summary indicating the futuristic aspect including practice questions. Aimed at researchers and senior undergraduate/graduate students in electrical and electronics engineering, microelectronics, nanoelectronics and nanotechnology, this book: Provides broad and comprehensive coverage from Microelectronics to Nanoelectronics including design in analog and digital electronics. Includes HDL, and VLSI design going into the nanoelectronics arena. Discusses devices, circuit analysis, design methodology, and real-time simulation based on industry standard HSPICE tool. Explores emerging devices such as FinFETs, Tunnel FETs (TFETs) and CNTFETs including their circuit co-designing. Covers real time illustration using industry standard Verilog, Cadence and Synopsys simulations.

Nanoelectronics

Nanoelectronics PDF Author: Robert Puers
Publisher: John Wiley & Sons
ISBN: 352734053X
Category : Technology & Engineering
Languages : en
Pages : 694

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Book Description
Offering first-hand insights by top scientists and industry experts at the forefront of R&D into nanoelectronics, this book neatly links the underlying technological principles with present and future applications. A brief introduction is followed by an overview of present and emerging logic devices, memories and power technologies. Specific chapters are dedicated to the enabling factors, such as new materials, characterization techniques, smart manufacturing and advanced circuit design. The second part of the book provides detailed coverage of the current state and showcases real future applications in a wide range of fields: safety, transport, medicine, environment, manufacturing, and social life, including an analysis of emerging trends in the internet of things and cyber-physical systems. A survey of main economic factors and trends concludes the book. Highlighting the importance of nanoelectronics in the core fields of communication and information technology, this is essential reading for materials scientists, electronics and electrical engineers, as well as those working in the semiconductor and sensor industries.

High Speed, Low Driving Voltage Vertical Cavity Germanium-silicon Modulators for Optical Interconnect

High Speed, Low Driving Voltage Vertical Cavity Germanium-silicon Modulators for Optical Interconnect PDF Author: Yiwen Rong
Publisher: Stanford University
ISBN:
Category :
Languages : en
Pages : 116

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Book Description
Information processing requires interconnects to carry information from one place to another. Optical interconnects between electronics systems have attracted significant attention and development for a number of years because optical links have demonstrated potential advantages for high-speed, low-power, and interference immunity. With increasing system speed and greater bandwidth requirements, the distance over which optical communication is useful has continually decreased to chip-to-chip and on-chip levels. Monolithic integration of photonics and electronics will significantly reduce the cost of optical components and further combine the functionalities of chips on the same or different boards or systems. Modulators are one of the fundamental building blocks for optical interconnects. Previous work demonstrated modulators based upon the quantum confined Stark effect (QCSE) in SiGe p-i-n devices with strained Ge/SiGe multi-quantum-well (MQW) structures in the i region. While the previous work demonstrated the effect, it did not examine the high-speed aspects of the device, which is the focus of this dissertation. High-speed modulation and low driving voltage are the keys for the device's practical use. At lower optical intensity operation, the ultimate limitation in speed will be the RC time constant of the device itself. At high optical intensity, the large number of photo generated carriers in the MQW region will limit the performance of the device through photo carrier related voltage drop and exciton saturation. In previous work, the devices consist of MQWs configured as p-i-n diodes. The electric field induced absorption change by QCSE modulates the optical transmission of the device. The focus of this thesis is the optimization of MQW material deposition, minimization of the parasitic capacitance of the probe pads for high speed, low voltage and high contrast ratio operation. The design, fabrication and high-speed characterization of devices of different sizes, with different bias voltages are presented. The device fabrication is based on processes for standard silicon electronics and is suitable for mass-production. This research will enable efficient transceivers to be monolithically integrated with silicon chips for high-speed optical interconnects. We demonstrated a modulator, with an eye diagram of 3.125GHz, a small driving voltage of 2.5V and an f3dB bandwidth greater than 30GHz. Carrier dynamics under ultra-fast laser excitation and high-speed photocurrent response are also investigated.