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Author: Yue Fu
Publisher: CRC Press
ISBN: 1351831712
Category : Technology & Engineering
Languages : en
Pages : 366
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Book Description
From power electronics to power integrated circuits (PICs), smart power technologies, devices, and beyond, Integrated Power Devices and TCAD Simulation provides a complete picture of the power management and semiconductor industry. An essential reference for power device engineering students and professionals, the book not only describes the physics inside integrated power semiconductor devices such lateral double-diffused metal oxide semiconductor field-effect transistors (LDMOSFETs), lateral insulated-gate bipolar transistors (LIGBTs), and super junction LDMOSFETs but also delivers a simple introduction to power management systems. Instead of abstract theoretical treatments and daunting equations, the text uses technology computer-aided design (TCAD) simulation examples to explain the design of integrated power semiconductor devices. It also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs). Including a virtual process flow for smart PIC technology as well as a hard-to-find technology development organization chart, Integrated Power Devices and TCAD Simulation gives students and junior engineers a head start in the field of power semiconductor devices while helping to fill the gap between power device engineering and power management systems.
Author: Yue Fu
Publisher: CRC Press
ISBN: 1351831712
Category : Technology & Engineering
Languages : en
Pages : 366
Get Book Here
Book Description
From power electronics to power integrated circuits (PICs), smart power technologies, devices, and beyond, Integrated Power Devices and TCAD Simulation provides a complete picture of the power management and semiconductor industry. An essential reference for power device engineering students and professionals, the book not only describes the physics inside integrated power semiconductor devices such lateral double-diffused metal oxide semiconductor field-effect transistors (LDMOSFETs), lateral insulated-gate bipolar transistors (LIGBTs), and super junction LDMOSFETs but also delivers a simple introduction to power management systems. Instead of abstract theoretical treatments and daunting equations, the text uses technology computer-aided design (TCAD) simulation examples to explain the design of integrated power semiconductor devices. It also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs). Including a virtual process flow for smart PIC technology as well as a hard-to-find technology development organization chart, Integrated Power Devices and TCAD Simulation gives students and junior engineers a head start in the field of power semiconductor devices while helping to fill the gap between power device engineering and power management systems.
Author: Yue Fu
Publisher: CRC Press
ISBN: 1466583835
Category : Technology & Engineering
Languages : en
Pages : 358
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Book Description
From power electronics to power integrated circuits (PICs), smart power technologies, devices, and beyond, Integrated Power Devices and TCAD Simulation provides a complete picture of the power management and semiconductor industry. An essential reference for power device engineering students and professionals, the book not only describes the physics inside integrated power semiconductor devices such lateral double-diffused metal oxide semiconductor field-effect transistors (LDMOSFETs), lateral insulated-gate bipolar transistors (LIGBTs), and super junction LDMOSFETs but also delivers a simple introduction to power management systems. Instead of abstract theoretical treatments and daunting equations, the text uses technology computer-aided design (TCAD) simulation examples to explain the design of integrated power semiconductor devices. It also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs). Including a virtual process flow for smart PIC technology as well as a hard-to-find technology development organization chart, Integrated Power Devices and TCAD Simulation gives students and junior engineers a head start in the field of power semiconductor devices while helping to fill the gap between power device engineering and power management systems.
Author: Simon Li
Publisher: Springer Science & Business Media
ISBN: 1461404819
Category : Technology & Engineering
Languages : en
Pages : 303
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Book Description
Technology computer-aided design, or TCAD, is critical to today’s semiconductor technology and anybody working in this industry needs to know something about TCAD. This book is about how to use computer software to manufacture and test virtually semiconductor devices in 3D. It brings to life the topic of semiconductor device physics, with a hands-on, tutorial approach that de-emphasizes abstract physics and equations and emphasizes real practice and extensive illustrations. Coverage includes a comprehensive library of devices, representing the state of the art technology, such as SuperJunction LDMOS, GaN LED devices, etc.
Author: Chinmay K. Maiti
Publisher: CRC Press
ISBN: 9814745529
Category : Science
Languages : en
Pages : 438
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Book Description
This might be the first book that deals mostly with the 3D technology computer-aided design (TCAD) simulations of major state-of-the-art stress- and strain-engineered advanced semiconductor devices: MOSFETs, BJTs, HBTs, nonclassical MOS devices, finFETs, silicon-germanium hetero-FETs, solar cells, power devices, and memory devices. The book focuses on how to set up 3D TCAD simulation tools, from mask layout to process and device simulation, including design for manufacturing (DFM), and from device modeling to SPICE parameter extraction. The book also offers an innovative and new approach to teaching the fundamentals of semiconductor process and device design using advanced TCAD simulations of various semiconductor structures. The simulation examples chosen are from the most popular devices in use today and provide useful technology and device physics insights. To extend the role of TCAD in today’s advanced technology era, process compact modeling and DFM issues have been included for design–technology interface generation. Unique in approach, this book provides an integrated view of silicon technology and beyond—with emphasis on TCAD simulations. It is the first book to provide a web-based online laboratory for semiconductor device characterization and SPICE parameter extraction. It describes not only the manufacturing practice associated with the technologies used but also the underlying scientific basis for those technologies. Written from an engineering standpoint, this book provides the process design and simulation background needed to understand new and future technology development, process modeling, and design of nanoscale transistors. The book also advances the understanding and knowledge of modern IC design via TCAD, improves the quality in micro- and nanoelectronics R&D, and supports the training of semiconductor specialists. It is intended as a textbook or reference for graduate students in the field of semiconductor fabrication and as a reference for engineers involved in VLSI technology development who have to solve device and process problems. CAD specialists will also find this book useful since it discusses the organization of the simulation system, in addition to presenting many case studies where the user applies TCAD tools in different situations.
Author: Yung-Chun Wu
Publisher: Springer
ISBN: 9811030669
Category : Technology & Engineering
Languages : en
Pages : 337
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Book Description
This book demonstrates how to use the Synopsys Sentaurus TCAD 2014 version for the design and simulation of 3D CMOS (complementary metal–oxide–semiconductor) semiconductor nanoelectronic devices, while also providing selected source codes (Technology Computer-Aided Design, TCAD). Instead of the built-in examples of Sentaurus TCAD 2014, the practical cases presented here, based on years of teaching and research experience, are used to interpret and analyze simulation results of the physical and electrical properties of designed 3D CMOSFET (metal–oxide–semiconductor field-effect transistor) nanoelectronic devices. The book also addresses in detail the fundamental theory of advanced semiconductor device design for the further simulation and analysis of electric and physical properties of semiconductor devices. The design and simulation technologies for nano-semiconductor devices explored here are more practical in nature and representative of the semiconductor industry, and as such can promote the development of pioneering semiconductor devices, semiconductor device physics, and more practically-oriented approaches to teaching and learning semiconductor engineering. The book can be used for graduate and senior undergraduate students alike, while also offering a reference guide for engineers and experts in the semiconductor industry. Readers are expected to have some preliminary knowledge of the field.
Author: Chandan Kumar Sarkar
Publisher: CRC Press
ISBN: 1466512660
Category : Technology & Engineering
Languages : en
Pages : 428
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Book Description
Responding to recent developments and a growing VLSI circuit manufacturing market, Technology Computer Aided Design: Simulation for VLSI MOSFET examines advanced MOSFET processes and devices through TCAD numerical simulations. The book provides a balanced summary of TCAD and MOSFET basic concepts, equations, physics, and new technologies related to TCAD and MOSFET. A firm grasp of these concepts allows for the design of better models, thus streamlining the design process, saving time and money. This book places emphasis on the importance of modeling and simulations of VLSI MOS transistors and TCAD software. Providing background concepts involved in the TCAD simulation of MOSFET devices, it presents concepts in a simplified manner, frequently using comparisons to everyday-life experiences. The book then explains concepts in depth, with required mathematics and program code. This book also details the classical semiconductor physics for understanding the principle of operations for VLSI MOS transistors, illustrates recent developments in the area of MOSFET and other electronic devices, and analyzes the evolution of the role of modeling and simulation of MOSFET. It also provides exposure to the two most commercially popular TCAD simulation tools Silvaco and Sentaurus. • Emphasizes the need for TCAD simulation to be included within VLSI design flow for nano-scale integrated circuits • Introduces the advantages of TCAD simulations for device and process technology characterization • Presents the fundamental physics and mathematics incorporated in the TCAD tools • Includes popular commercial TCAD simulation tools (Silvaco and Sentaurus) • Provides characterization of performances of VLSI MOSFETs through TCAD tools • Offers familiarization to compact modeling for VLSI circuit simulation R&D cost and time for electronic product development is drastically reduced by taking advantage of TCAD tools, making it indispensable for modern VLSI device technologies. They provide a means to characterize the MOS transistors and improve the VLSI circuit simulation procedure. The comprehensive information and systematic approach to design, characterization, fabrication, and computation of VLSI MOS transistor through TCAD tools presented in this book provides a thorough foundation for the development of models that simplify the design verification process and make it cost effective.
Author: Angelo Rivetti
Publisher: CRC Press
ISBN: 1466563117
Category : Science
Languages : en
Pages : 713
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Book Description
CMOS: Front-End Electronics for Radiation Sensors offers a comprehensive introduction to integrated front-end electronics for radiation detectors, focusing on devices that capture individual particles or photons and are used in nuclear and high energy physics, space instrumentation, medical physics, homeland security, and related fields. Emphasizing practical design and implementation, this book: Covers the fundamental principles of signal processing for radiation detectors Discusses the relevant analog building blocks used in the front-end electronics Employs systematically weak and moderate inversion regimes in circuit analysis Makes complex topics such as noise and circuit-weighting functions more accessible Includes numerical examples where appropriate CMOS: Front-End Electronics for Radiation Sensors provides specialized knowledge previously obtained only through the study of multiple technical and scientific papers. It is an ideal text for students of physics and electronics engineering, as well as a useful reference for experienced practitioners.
Author: Jean-Luc Autran
Publisher: CRC Press
ISBN: 1351831550
Category : Technology & Engineering
Languages : en
Pages : 532
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Book Description
Soft errors are a multifaceted issue at the crossroads of applied physics and engineering sciences. Soft errors are by nature multiscale and multiphysics problems that combine not only nuclear and semiconductor physics, material sciences, circuit design, and chip architecture and operation, but also cosmic-ray physics, natural radioactivity issues, particle detection, and related instrumentation. Soft Errors: From Particles to Circuits addresses the problem of soft errors in digital integrated circuits subjected to the terrestrial natural radiation environment—one of the most important primary limits for modern digital electronic reliability. Covering the fundamentals of soft errors as well as engineering considerations and technological aspects, this robust text: Discusses the basics of the natural radiation environment, particle interactions with matter, and soft-error mechanisms Details instrumentation developments in the fields of environment characterization, particle detection, and real-time and accelerated tests Describes the latest computational developments, modeling, and simulation strategies for the soft error-rate estimation in digital circuits Explores trends for future technological nodes and emerging devices Soft Errors: From Particles to Circuits presents the state of the art of this complex subject, providing comprehensive knowledge of the complete chain of the physics of soft errors. The book makes an ideal text for introductory graduate-level courses, offers academic researchers a specialized overview, and serves as a practical guide for semiconductor industry engineers or application engineers.
Author: Hassen Fourati
Publisher: CRC Press
ISBN: 1351830880
Category : Technology & Engineering
Languages : en
Pages : 628
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Book Description
Multisensor Data Fusion: From Algorithms and Architectural Design to Applications covers the contemporary theory and practice of multisensor data fusion, from fundamental concepts to cutting-edge techniques drawn from a broad array of disciplines. Featuring contributions from the world’s leading data fusion researchers and academicians, this authoritative book: Presents state-of-the-art advances in the design of multisensor data fusion algorithms, addressing issues related to the nature, location, and computational ability of the sensors Describes new materials and achievements in optimal fusion and multisensor filters Discusses the advantages and challenges associated with multisensor data fusion, from extended spatial and temporal coverage to imperfection and diversity in sensor technologies Explores the topology, communication structure, computational resources, fusion level, goals, and optimization of multisensor data fusion system architectures Showcases applications of multisensor data fusion in fields such as medicine, transportation's traffic, defense, and navigation Multisensor Data Fusion: From Algorithms and Architectural Design to Applications is a robust collection of modern multisensor data fusion methodologies. The book instills a deeper understanding of the basics of multisensor data fusion as well as a practical knowledge of the problems that can be faced during its execution.
Author: Jan S. Iwanczyk
Publisher: CRC Press
ISBN: 1498704360
Category : Technology & Engineering
Languages : en
Pages : 362
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Book Description
Radiation Detectors for Medical Imaging discusses the current state of the art and future prospects of photon-counting detectors for medical imaging applications. Featuring contributions from leading experts and pioneers in their respective fields, this book:Describes x-ray spectral imaging detectors based on cadmium zinc telluride (CdZnTe) and cad
