Insulating Films on Semiconductors 1991, Proceedings from the 7th Biennial European Conference. PDF Download
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Author: W. Eccleston
Publisher: CRC Press
ISBN: 9780750301688
Category : Technology & Engineering
Languages : en
Pages : 368
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Book Description
Insulating Films on Semiconductors 1991 covers the fundamental aspects of the properties of dielectrics/semiconductor structures, the study of high field/hot electron/radiation induced phenomena, and the developments in measurement techniques for looking at interfaces and surfaces on semiconductor materials. The volume is written for researchers in physics, materials science, electronics, and electrical engineering.
Author: W. Eccleston
Publisher: CRC Press
ISBN: 9780750301688
Category : Technology & Engineering
Languages : en
Pages : 368
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Book Description
Insulating Films on Semiconductors 1991 covers the fundamental aspects of the properties of dielectrics/semiconductor structures, the study of high field/hot electron/radiation induced phenomena, and the developments in measurement techniques for looking at interfaces and surfaces on semiconductor materials. The volume is written for researchers in physics, materials science, electronics, and electrical engineering.
Author: United States. Patent and Trademark Office
Publisher:
ISBN:
Category : Patents
Languages : en
Pages : 1448
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Book Description
Author: B.E. Deal
Publisher: Springer Science & Business Media
ISBN: 1489915885
Category : Science
Languages : en
Pages : 505
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Book Description
The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 420
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Book Description
Author:
Publisher:
ISBN:
Category : Patents
Languages : en
Pages : 836
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Book Description
Author: Arthur James Wells
Publisher:
ISBN:
Category : Bibliography, National
Languages : en
Pages : 2000
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Book Description
Author:
Publisher:
ISBN:
Category : Conference proceedings
Languages : en
Pages : 862
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Book Description
Author: John Penczek
Publisher:
ISBN:
Category :
Languages : en
Pages : 420
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Book Description
Author: M. A. Tischler
Publisher: Mrs Proceedings
ISBN:
Category : Science
Languages : en
Pages : 488
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: S. A. Campbell
Publisher: Wiley-Blackwell
ISBN:
Category : Science
Languages : en
Pages : 344
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Book Description
Semiconductor Micromachining - Fundamentals and Technology - is a two volume work in which, for the first time, the various disciplines associated with the theory and practice of device fabrication are brought together in one comprehensive reference source. Volume 1 contains a detailed coverage of semiconductor electrochemistry and physics whilst Volume 2 describes the wide range of microengineering technologies with details of practical applications. The authors for each chapter have been carefully selected for their expertise and are acknowledged leaders in their respective fields. The purpose of this book is to enable workers in the area of semiconductor micromachining to have ready access to the basic literature, essential to provide a solid basis for the many different aspects of physics, chemistry, electronics and engineering involved with this technology. The main focus of the book is on structures based on silicon, the most common and versatile of the current range of commercially available semiconductors, but other materials such as III V semiconductors are also considered. Together these two volumes provide an indispensable reference text for this fast growing area of applied science. It will be of value to a wide range of academic and industrial scientists, technologists and engineers who wish to expand their knowledge in this area of science and for whom thus far, there has been no convenient reference work. Volume 2: Techniques and Industrial Applications
