InP-based Materials and Heterostructure Devices, and the Applications in Monolithic Integrated NPN and PNP HBT Circuits PDF Download
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Author: Delong Cui
Publisher:
ISBN:
Category :
Languages : en
Pages : 658
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Author: Delong Cui
Publisher:
ISBN:
Category :
Languages : en
Pages : 658
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Author: Osamu Wada
Publisher: Wiley-Interscience
ISBN:
Category : Science
Languages : en
Pages : 616
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Book Description
A comprehensive guide to current techniques, applications, and trends in InP-based technologies. Introducing one of the hottest technologies in the semiconductor industry, this collection of articles by international leading experts covers the state of the art of indium phosphide (InP)-based materials and devices. From current industry practices to cutting-edge developments to promising research trends, each chapter describes a particular aspect of the technology, giving scientists and engineers the necessary information, including physical principles and technical know-how, to design, apply, and troubleshoot these high-performance, low-cost components for diverse systems-TDM and WDM optical systems or microwave and millimeter-wave systems. The advantages and challenges still to overcome of InP-based semiconductors as compared with the more mature GaAs technology are also thoroughly reviewed. Presented in an easy-to-understand tutorial style, with topics cross-referenced between chapters, InP-Based Materials and Devices features more than 1,500 references as well as 365 figures and tables. Key topics include: * Basic materials physics involved in a wide range of InP-based compounds. * Growth of high-purity bulk and heterostructure epitaxy, including MOCVD, MBE, and GS-MBE. * Hetero-interface control and dry process techniques for device fabrication. * High-performance heterojunction-FETs and HEMTs as well as HBTs for high-speed IC and MMIC applications. * Lasers, amplifiers, and modulators as well as photodiodes and receivers for high-speed and WDM networks. * Optoelectronic integration and packing for functional, low-cost modules.
Author: Donald James Sawdai
Publisher:
ISBN:
Category :
Languages : en
Pages : 602
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Author:
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ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 896
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Author: Dwight Christopher Streit
Publisher: SPIE-International Society for Optical Engineering
ISBN:
Category : Science
Languages : en
Pages : 152
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A collection of 19 scientific papers on high frequency devices and systems.
Author:
Publisher:
ISBN:
Category : Electrooptical devices
Languages : en
Pages : 768
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Author: M O Manasreh
Publisher: CRC Press
ISBN: 9789056992644
Category : Technology & Engineering
Languages : en
Pages : 870
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Book Description
InP is a key semiconductor for the production of optoelectronic and photonic devices. Its related compounds, such as InGaAsP alloy, have been realized as very important materials for communication in the 1.3 and 1.55 micron spectral regions. Furthermore, the applications on InP and related compounds have extended to other areas that include laser diodes, light emitting diodes, photodetectors, waveguides, photocathodes, solar cells, and many other applications. The topics presented in this book have been chosen to achieve a balance between the properties of bulk materials, doping, characterization, applications, and devices. This unique volume, featuring chapters written by experts in the field, provides a good starting point for those who are new to the subject and contains detailed results and in depth discussions for those who are experts in the field.
Author:
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 2616
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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
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InP-based (AlInAs/GaInAs) high election mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs) have demonstrated a substantial performance improvement over GaAs-based devices, HEMTS with extrinsic fT's over 300 GHz, fmax over 400 GHz, and amplifiers with extremely low noise figures and high associated gain (NF
Author: Kyushik Hong
Publisher:
ISBN:
Category :
Languages : en
Pages : 532
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Book Description
