In-Situ Characterization of the Amorphous to Microcrystalline Transition in Hot Wire CVD Growth of Si PDF Download
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Languages : en
Pages : 7
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Book Description
This conference paper provides a brief look at the current U.S. research and development (R & D) investments in photovoltaics, covering the spectrum from materials and devices through electronics and systems reliability. The program is balanced among fundamental R & D, technology development, and systems performance and reliability, with more than half the funding for university and industry partners. The major activities can be categorized into two general areas: improving current and near-term technologies toward their expected performance levels (the largest portion), and positioning the United States for technical leadership, decision making, and ownership for the host of next-technology options (including some options that have been called third-generation). The investments in these higher risk, longer-term technology generations provide options that could leapfrog into more rapid use because of their promise of potentially high payoff. Solar electricity is part of America's present and future energy security and independence-as is the R & D that enables it.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 7
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Book Description
This conference paper provides a brief look at the current U.S. research and development (R & D) investments in photovoltaics, covering the spectrum from materials and devices through electronics and systems reliability. The program is balanced among fundamental R & D, technology development, and systems performance and reliability, with more than half the funding for university and industry partners. The major activities can be categorized into two general areas: improving current and near-term technologies toward their expected performance levels (the largest portion), and positioning the United States for technical leadership, decision making, and ownership for the host of next-technology options (including some options that have been called third-generation). The investments in these higher risk, longer-term technology generations provide options that could leapfrog into more rapid use because of their promise of potentially high payoff. Solar electricity is part of America's present and future energy security and independence-as is the R & D that enables it.
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Languages : en
Pages : 7
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Book Description
Real-time, in-situ characterization of hot-wire chemical vapor deposition (HWCVD) growth of hydrogenated silicon (Si:H) thin films offers unique insight into the properties of the materials and mechanisms of their growth. We have used in-situ spectroscopic ellipsometry to characterize Si:H crystallinity as a function of film thickness and deposition conditions. We find that the transition from amorphous to microcrystalline growth is a strong function of film thickness and hydrogen dilution, and a weak function of substrate temperature. We have expressed this information in terms of a color-coded phase-space map of the amorphous to microcrystalline transition in HWCVD growth on crystalline Si substrates.
Author: Gertjan Koster
Publisher: Elsevier
ISBN: 0857094955
Category : Technology & Engineering
Languages : en
Pages : 295
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Book Description
Advanced techniques for characterizing thin film growth in situ help to develop improved understanding and faster diagnosis of issues with the process. In situ characterization of thin film growth reviews current and developing techniques for characterizing the growth of thin films, covering an important gap in research. Part one covers electron diffraction techniques for in situ study of thin film growth, including chapters on topics such as reflection high-energy electron diffraction (RHEED) and inelastic scattering techniques. Part two focuses on photoemission techniques, with chapters covering ultraviolet photoemission spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS) and in situ spectroscopic ellipsometry for characterization of thin film growth. Finally, part three discusses alternative in situ characterization techniques. Chapters focus on topics such as ion beam surface characterization, real time in situ surface monitoring of thin film growth, deposition vapour monitoring and the use of surface x-ray diffraction for studying epitaxial film growth. With its distinguished editors and international team of contributors, In situ characterization of thin film growth is a standard reference for materials scientists and engineers in the electronics and photonics industries, as well as all those with an academic research interest in this area. Chapters review electron diffraction techniques, including the methodology for observations and measurements Discusses the principles and applications of photoemission techniques Examines alternative in situ characterisation techniques
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Languages : en
Pages : 0
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Book Description
Presented at the 2001 NCPV Program Review Meeting: First application of real-time spectroscopic ellipsometry to in situ characterization of hot-wire CVD of hydrogenated-silicon thin films.
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Category :
Languages : en
Pages : 4
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Book Description
Presented at the 2001 NCPV Program Review Meeting: First application of real-time spectroscopic ellipsometry to in situ characterization of hot-wire CVD of hydrogenated-silicon thin films.
Author: Martin Stutzmann
Publisher: Cambridge University Press
ISBN: 9781107412248
Category : Technology & Engineering
Languages : en
Pages : 1012
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Book Description
This book looks at the exchange of information on the physics and application of amorphous and microcrystalline silicon and presents exciting new developments. Significant progress has been made in the high- or even ultra-high-rate deposition of device-quality amorphous and microcrystalline silicon, in in-situ growth characterization techniques and in state-of-the-art computer modeling of deposition processes. These issues are especially important for the successful future commercialization of silicon thin-film devices. The latest results concerning silicon thin-film solar cells are highlighted. Active matrix arrays for displays or sensors continue to be the second major application of thin silicon films, and again much progress has been made in that area. Topics include: nucleation and growth; novel concepts; hot-wire CVD; high-rate deposition; growth of silicon and silicon-alloy thin films; crystallization; silicon-based alloys; structural properties of heterogeneous silicon films; dopants and impurities; amorphous and silicon solar cells; metastability; hydrogen and metastability; transport in µc-Si; thin-film transistors; hydrogenation and oxidation; defects and defect spectroscopy; structural and electronic properties of thin silicon films; heterojunctions; TFTs and sensors; amorphous-to-microcrystalline transition and structural relaxation and diffusion.
Author: Martin Stutzmann
Publisher: Cambridge University Press
ISBN: 9781558996007
Category : Technology & Engineering
Languages : en
Pages : 0
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Book Description
This book looks at the exchange of information on the physics and application of amorphous and microcrystalline silicon and presents exciting new developments. Significant progress has been made in the high- or even ultra-high-rate deposition of device-quality amorphous and microcrystalline silicon, in in-situ growth characterization techniques and in state-of-the-art computer modeling of deposition processes. These issues are especially important for the successful future commercialization of silicon thin-film devices. The latest results concerning silicon thin-film solar cells are highlighted. Active matrix arrays for displays or sensors continue to be the second major application of thin silicon films, and again much progress has been made in that area. Topics include: nucleation and growth; novel concepts; hot-wire CVD; high-rate deposition; growth of silicon and silicon-alloy thin films; crystallization; silicon-based alloys; structural properties of heterogeneous silicon films; dopants and impurities; amorphous and silicon solar cells; metastability; hydrogen and metastability; transport in µc-Si; thin-film transistors; hydrogenation and oxidation; defects and defect spectroscopy; structural and electronic properties of thin silicon films; heterojunctions; TFTs and sensors; amorphous-to-microcrystalline transition and structural relaxation and diffusion.
Author: Hailan Duan
Publisher:
ISBN:
Category :
Languages : en
Pages : 164
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Book Description
Author: T. Wang
Publisher:
ISBN:
Category :
Languages : en
Pages : 5
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Book Description
Real-time spectroscopic ellipsometry (RTSE) has proven to be an exceptionally valuable tool in the optimization of hot wire CVD (HWCVD) growth of both silicon heterojunction (SHJ) solar cells and thin epitaxial layers of crystal silicon (epi-Si). For SHJ solar cells, RTSE provides real-time thickness information and rapid feedback on the degree of crystallinity of the thin intrinsic layers used to passivate the crystal silicon (c-Si) wafers. For epi-Si growth, RTSE provides real-time feedback on the crystallinity and breakdown of the epitaxial growth process. Transmission electron microscopy (TEM) has been used to verify the RTSE analysis of thickness and crystallinity. In contrast to TEM, RTSE provides feedback in real time or same-day, while TEM normally requires weeks. This rapid feedback has been a key factor in the rapid progress of both the SHJ and epi-Si projects.
Author: Ross Birney
Publisher: MDPI
ISBN: 3036505121
Category : Science
Languages : en
Pages : 154
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Book Description
Today, thin films are near-ubiquitous and are utilised in a very wide range of industrially and scientifically important areas. These include familiar everyday instances such as anti-reflective coatings on ophthalmic lenses, smartphone optics, photovoltaics, decorative, and tool coatings. A range of somewhat more exotic applications also exists, such as astronomical instrumentation (e.g., ultra-low loss dielectric mirrors and beam splitters in gravitational wave detectors, such as laser interferometer gravitational-wave observatory (LIGO)), gas sensing, medical devices and implants, and accelerator coatings (e.g., coatings for the large hadron collider (LHC), and compact linear collider (CLIC) experiments at European organization for nuclear research (CERN)). This Special Issue will provide a platform for researchers working in any area within this highly diverse field to share and exchange their latest research findings. The Special Issue contains novel studies encompassing material characterisation techniques, a range of thin-film coating deposition processes and applications of such technology.
