Implementation of a Sensing Technique for Non-volatile M-R Memories PDF Download
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Author: Vivek Mehra
Publisher:
ISBN:
Category :
Languages : en
Pages : 166
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Book Description
Author: Vivek Mehra
Publisher:
ISBN:
Category :
Languages : en
Pages : 166
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Book Description
Author: Swaroop Ghosh
Publisher: Springer
ISBN: 3319973479
Category : Technology & Engineering
Languages : en
Pages : 116
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Book Description
This book introduces readers to the latest advances in sensing technology for a broad range of non-volatile memories (NVMs). Challenges across the memory technologies are highlighted and their solutions in mature technology are discussed, enabling innovation of sensing technologies for future NVMs. Coverage includes sensing techniques ranging from well-established NVMs such as hard disk, flash, Magnetic RAM (MRAM) to emerging NVMs such as ReRAM, STTRAM, FeRAM and Domain Wall Memory will be covered.
Author: Seungbum Hong
Publisher: Springer
ISBN: 1489975373
Category : Technology & Engineering
Languages : en
Pages : 280
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Book Description
This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers’ understanding of future trends in non-volatile memories.
Author: Jayakrishnan M. Purushothama
Publisher: John Wiley & Sons
ISBN: 1119902819
Category : Technology & Engineering
Languages : en
Pages : 226
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Book Description
This book presents the applications of non-volatile CBRAM/MIM switching technology for electronically reconfigurable passive RF and microwave devices, together with theory and methods for application in rewritable chipless RFID tags. Conductive Bridging Random Access Memory (CBRAM) is a renowned and commercially used non-volatile memory concept. Having evolved over the past few decades, it is currently identified as an efficient non-volatile RF switching technology. This book presents recent research on this topic, focusing on the development of a new generation of low-cost non-volatile RF switches and their applications, demonstrating both high performance and flexibility of implementation. It includes the experimental realization of various prototypes of RF and microwave devices utilizing this technology, along with relevant analysis of mathematical and electrical models, and detailed discussions of future aspects. All devices presented are compatible with mass industrial production at an economically efficient budget through optimized fabrication steps, without the requirement of sophisticated “clean room” processes among them.
Author: Charles Ching-hsiang Hsu
Publisher: World Scientific
ISBN: 9814460923
Category : Technology & Engineering
Languages : en
Pages : 319
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Book Description
Would you like to add the capabilities of the Non-Volatile Memory (NVM) as a storage element in your silicon integrated logic circuits, and as a trimming sector in your high voltage driver and other silicon integrated analog circuits? Would you like to learn how to embed the NVM into your silicon integrated circuit products to improve their performance?This book is written to help you.It provides comprehensive instructions on fabricating the NVM using the same processes you are using to fabricate your logic integrated circuits. We at our eMemory company call this technology the embedded Logic NVM. Because embedded Logic NVM has simple fabrication processes, it has replaced the conventional NVM in many traditional and new applications, including LCD driver, LED driver, MEMS controller, touch panel controller, power management unit, ambient and motion sensor controller, micro controller unit (MCU), security ID setting tag, RFID, NFC, PC camera controller, keyboard controller, and mouse controller. The recent explosive growth of the Logic NVM indicates that it will soon dominate all NVM applications. The embedded Logic NVM was invented and has been implemented in users' applications by the 200+ employees of our eMemory company, who are also the authors and author-assistants of this book.This book covers the following Logic NVM products: One Time Programmable (OTP) memory, Multiple Times Programmable (MTP) memory, Flash memory, and Electrically Erasable Programmable Read Only Memory (EEPROM). The fundamentals of the NVM are described in this book, which include: the physics and operations of the memory transistors, the basic building block of the memory cells and the access circuits.All of these products have been used continuously by the industry worldwide. In-depth readers can attain expert proficiency in the implementation of the embedded Logic NVM technology in their products.
Author: Hao Yu
Publisher: Springer Science & Business
ISBN: 1493905511
Category : Technology & Engineering
Languages : en
Pages : 200
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Book Description
This book presents the latest techniques for characterization, modeling and design for nano-scale non-volatile memory (NVM) devices. Coverage focuses on fundamental NVM device fabrication and characterization, internal state identification of memristic dynamics with physics modeling, NVM circuit design and hybrid NVM memory system design-space optimization. The authors discuss design methodologies for nano-scale NVM devices from a circuits/systems perspective, including the general foundations for the fundamental memristic dynamics in NVM devices. Coverage includes physical modeling, as well as the development of a platform to explore novel hybrid CMOS and NVM circuit and system design. • Offers readers a systematic and comprehensive treatment of emerging nano-scale non-volatile memory (NVM) devices; • Focuses on the internal state of NVM memristic dynamics, novel NVM readout and memory cell circuit design and hybrid NVM memory system optimization; • Provides both theoretical analysis and practical examples to illustrate design methodologies; • Illustrates design and analysis for recent developments in spin-toque-transfer, domain-wall racetrack and memristors.
Author: United States. Patent and Trademark Office
Publisher:
ISBN:
Category : Patents
Languages : en
Pages : 1396
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Book Description
Author: Puja Dey
Publisher: Springer Nature
ISBN: 9811600694
Category : Science
Languages : en
Pages : 287
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Book Description
This book highlights the overview of Spintronics, including What is Spintronics ?; Why Do We Need Spintronics ?; Comparative merit-demerit of Spintronics and Electronics ; Research Efforts put on Spintronics ; Quantum Mechanics of Spin; Dynamics of magnetic moments : Landau-Lifshitz-Gilbert Equation; Spin-Dependent Band Gap in Ferromagnetic Materials; Functionality of ‘Spin’ in Spintronics; Different Branches of Spintronics etc. Some important notions on basic elements of Spintronics are discussed here, such as – Spin Polarization, Spin Filter Effect, Spin Generation and Injection, Spin Accumulation, Different kinds of Spin Relaxation Phenomena, Spin Valve, Spin Extraction, Spin Hall Effect, Spin Seebeck Effect, Spin Current Measurement Mechanism, Magnetoresistance and its different kinds etc. Concept of Giant Magnetoresistance (GMR), different types of GMR, qualitative and quantitative explanation of GMR employing Resistor Network Theory are presented here. Tunnelling Magnetoresistance (TMR), Magnetic Junctions, Effect of various parameters on TMR, Measurement of spin relaxation length and time in the spacer layer are covered here. This book highlights the concept of Spin Transfer Torque (STT), STT in Ferromagnetic Layer Structures, STT driven Magnetization Dynamics, STT in Magnetic Multilayer Nanopillar etc. This book also sheds light on Magnetic Domain Wall (MDW) Motion, Ratchet Effect in MDW motion, MDW motion velocity measurements, Current-driven MDW motion, etc. The book deals with the emerging field of spintronics, i.e., Opto-spintronics. Special emphasis is given on ultrafast optical controlling of magnetic states of antiferromagnet, Spin-photon interaction, Faraday Effect, Inverse Faraday Effect and outline of different all-optical spintronic switching. One more promising branch i.e., Terahertz Spintronics is also covered. Principle of operation of spintronic terahertz emitter, choice of materials, terahertz writing of an antiferromagnetic magnetic memory device is discussed. Brief introduction of Semiconductor spintronics is presented that includes dilute magnetic semiconductor, feromagnetic semiconductor, spin polarized semiconductor devices, three terminal spintronic devices, Spin transistor, Spin-LED, and Spin-Laser. This book also emphasizes on several modern spintronics devices that includes GMR Read Head of Modern Hard Disk Drive, MRAM, Position Sensor, Biosensor, Magnetic Field sensor, Three Terminal Magnetic Memory Devices, Spin FET, Race Track Memory and Quantum Computing.
Author: Haichang Zhang
Publisher: Frontiers Media SA
ISBN: 2889664813
Category : Science
Languages : en
Pages : 126
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Book Description
Author: K.H.J. Buschow
Publisher: Elsevier
ISBN: 0080522459
Category : Science
Languages : en
Pages : 677
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Book Description
Volume 15 of the Handbook on the Properties of Magnetic Materials, as the preceding volumes, has a dual purpose. As a textbook it is intended to be of assistance to those who wish to be introduced to a given topic in the field of magnetism without the need to read the vast amount of literature published. As a work of reference it is intended for scientists active in magnetism research. To this dual purpose, Volume 15 of the Handbook is composed of topical review articles written by leading authorities. In each of these articles an extensive description is given in graphical as well as in tabular form, much emphasis being placed on the discussion of the experimental material in the framework of physics, chemistry and material science. It provides the readership with novel trends and achievements in magnetism.
