III-Nitride, SiC, and Diamond Materials for Electronic Devices: Volume 423 PDF Download
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Author: D. Kurt Gaskill
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 824
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Book Description
This book differs from previous volumes on wide bandgap semiconductors in that the emphasis is specifically on materials aspects related to electronic properties and devices. Solid advances are reported in the growth techniques of all three materials groups. In particular, the critical importance of surfaces, interfaces, doping, defects and impurities is demonstrated. Potential device applications ranging from new high-frequency, high-power all-solid-state devices to unique cold-cathode electronic devices are presented. Whilst the results demonstrate real promise for a wide range of new solid-state devices that are not feasible with current production materials, it is also evident that substantial progress in materials research is needed to fulfill the real potential of these applications. Critical issues related to the electronic potential of all three materials are addressed. Topics include: device technologies - devices, metallizations, etching, and implantation; bulk and bulk-like crystal growth; film growth; defects and structural properties; doping and electrical properties and optical and field-emission properties.
Author: D. Kurt Gaskill
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 824
Get Book Here
Book Description
This book differs from previous volumes on wide bandgap semiconductors in that the emphasis is specifically on materials aspects related to electronic properties and devices. Solid advances are reported in the growth techniques of all three materials groups. In particular, the critical importance of surfaces, interfaces, doping, defects and impurities is demonstrated. Potential device applications ranging from new high-frequency, high-power all-solid-state devices to unique cold-cathode electronic devices are presented. Whilst the results demonstrate real promise for a wide range of new solid-state devices that are not feasible with current production materials, it is also evident that substantial progress in materials research is needed to fulfill the real potential of these applications. Critical issues related to the electronic potential of all three materials are addressed. Topics include: device technologies - devices, metallizations, etching, and implantation; bulk and bulk-like crystal growth; film growth; defects and structural properties; doping and electrical properties and optical and field-emission properties.
Author: Fernando A. Ponce
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 1290
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Book Description
Author: Mark A. Prelas
Publisher: Springer Science & Business Media
ISBN: 9401155925
Category : Technology & Engineering
Languages : en
Pages : 378
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Book Description
Diamond-based composites, with their advantages of hardness, high Young's modulus and the like, have demonstrated new and unusual features, such as stability to high temperatures and pressure shocks and a large internal surface that can be controlled to offer customised electrical, magnetic and optical properties, leading to efficient filters, absorbents, sensors and other tools for environmental control and monitoring. The current book covers the synthesis of materials, their characterization and properties, trends in high pressure and high temperature technologies, low pressure technologies, basic principles of DBC material science, and future developments in electronics, optics, industrial tools and components, biotechnology, and medicine. Wide band-gap materials are considered, ranging from molecular clusters, nanophase materials, growth, processing and synthesis. The processing of composite based materials can be classified into six basic methods: in situ growth, high pressure/high temperature catalytic conversion; mix and sinter (c-BN plus metal-ceramic polymer mix); direct sintering; direct polymorphic conversion; shock detonation; and SHS sintering.
Author: Richard Dronskowski
Publisher: John Wiley & Sons
ISBN: 3527325875
Category : Technology & Engineering
Languages : en
Pages : 3912
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Book Description
This most comprehensive and unrivaled compendium in the field provides an up-to-date account of the chemistry of solids, nanoparticles and hybrid materials. Following a valuable introductory chapter reviewing important synthesis techniques, the handbook presents a series of contributions by about 150 international leading experts -- the "Who's Who" of solid state science. Clearly structured, in six volumes it collates the knowledge available on solid state chemistry, starting from the synthesis, and modern methods of structure determination. Understanding and measuring the physical properties of bulk solids and the theoretical basis of modern computational treatments of solids are given ample space, as are such modern trends as nanoparticles, surface properties and heterogeneous catalysis. Emphasis is placed throughout not only on the design and structure of solids but also on practical applications of these novel materials in real chemical situations.
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 974
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Book Description
Author: Louis J. Terminello
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 282
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Book Description
As third-generation synchrotron facilities are constructed and go online in both the United States and around the world, increasingly more applications of synchrotron radiation will be realized. Both basic and applied research possibilities are manyfold, and include studies of solid surfaces and interfaces, electronic materials, metal oxides, glasses, thin films, superconductors, polymers, alloys, multilayer metal systems and intermetallic compounds. In addition, the combination of synchrotron-based spectroscopic techniques, with ever increasing high-resolution microscopy, allows researchers to study very small domains of materials in an attempt to understand their chemical and electronic properties. This book from MRS focuses on the various types of information that can be obtained from synchrotron-related techniques in order to expand the use of this unique and powerful experimental approach to materials research. Topics include: structure of reduced dimensional materials; magnetic materials; microscopy, topography and tomography; X-ray probes of solids; and materials characterization with X-ray absorption.
Author: Michael L. Reed
Publisher:
ISBN:
Category : Mathematics
Languages : en
Pages : 264
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Book Description
A selection of 33 reviewed papers explore the materials aspects of microsystems, especially those involving mechanical, optical, and thermal components. The topics include technology for micro- assembling, selective electroless copper metallization of epoxy substrates, an improved auto-adhesion measurement method for micro-machines polysilicon beams, patterned sol-gel structures by micro-molding in capillaries, the experimental analysis of the process of anodic bonding using an evaporated glass layer, the effect of inorganic thin film material processing and properties on stress in silicon piezoresistive pressure sensors, and photoconductivity in vacuum-deposited films of silicon-based polymers. Annotation copyrighted by Book News, Inc., Portland, OR
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 778
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Book Description
This volume contains papers presented at the 1996 MRS Spring Meeting during the symposium on III-Nitride, SiC and Diamond Materials for Electronic Devices. The meeting was held in San Francisco. California, from April 8-12. The symposium involved over 140 papers that included invited presentations and contributed oral, poster and late news posters, as well as a panel discussion held mid-week. This symposium differed from several previous MRS symposia on wide bandgap semiconductors in that the emphasis was specifically on materials aspects related to electronic properties and devices. The proceedings volume is organized much as the meeting, but with poster and oral presentations mixed according to the session topics. Solid advances were reported in the growth techniques of all three materials groups. Contributions demonstrated the critical importance of surfaces, interfaces, doping, defects, and impurities. Reports showed potential device applications ranging from new high-frequency, high-power all solid-state devices to unique cold cathode electronic devices. While the results presented here demonstrate real promise for a wide range of new solid-state devices that are not feasible with current production materials, substantial progress in materials research is necessary to fulfill the real potential of these applications. A lively panel discussion was held in the middle of the conference which focused on several critical issues related to the electronic potential of the three materials.
Author: P. C. Chang
Publisher: The Electrochemical Society
ISBN: 9781566773362
Category : Technology & Engineering
Languages : en
Pages : 344
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Book Description
Author: R. J. Shul
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 480
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Book Description
III-V semiconductors have continued to find new applications in optical data transmission, full-color displays, automotive electronics and personal communication systems. Complex epitaxial growth, processing, device design and circuit architecture are all necessary for realization of these elements. This book brings together the diverse group of scientists and researchers that are required to develop the next-generation devices. The wide bandgap nitrides, GaN, AlN, InN and their alloys are featured. The commercial availability of blue- and green-light-emitting diodes based on the InGaN/AlGaN system, and the recent announcement of pulsed operation of a laser diode, have stimulated interest in the growth, characterization and processing of these materials. Potential applications in high-temperature/high-power electronics appear promising because of the good transport properties of these nitrides. Topics include: growth and characterization; photonics and processing; electronics and processing; wide bandgap semiconductors and novel devices and processing.
