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Author:
Publisher:
ISBN:
Category : Electronic apparatus and appliances
Languages : en
Pages : 174
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Book Description
Author:
Publisher:
ISBN:
Category : Electronic apparatus and appliances
Languages : en
Pages : 174
Get Book Here
Book Description
Author: Juin Jei Liou
Publisher: Springer Science & Business Media
ISBN: 1461554152
Category : Technology & Engineering
Languages : en
Pages : 356
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Book Description
Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.
Author: Chenming Hu
Publisher: Woodhead Publishing
ISBN: 9780081024010
Category : Technology & Engineering
Languages : en
Pages : 0
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Book Description
Industry Standard FDSOI Compact Model BSIM-IMG for IC Design helps readers develop an understanding of a FDSOI device and its simulation model. It covers the physics and operation of the FDSOI device, explaining not only how FDSOI enables further scaling, but also how it offers unique possibilities in circuits. Following chapters cover the industry standard compact model BSIM-IMG for FDSOI devices. The book addresses core surface-potential calculations and the plethora of real devices and potential effects. Written by the original developers of the industrial standard model, this book is an excellent reference for the new BSIM-IMG compact model for emerging FDSOI technology. The authors include chapters on step-by-step parameters extraction procedure for BSIM-IMG model and rigorous industry grade tests that the BSIM-IMG model has undergone. There is also a chapter on analog and RF circuit design in FDSOI technology using the BSIM-IMG model.
Author: Arman Vassighi
Publisher: Springer Science & Business Media
ISBN: 0387297499
Category : Technology & Engineering
Languages : en
Pages : 188
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Book Description
In Thermal and Power Management of Integrated Circuits, power and thermal management issues in integrated circuits during normal operating conditions and stress operating conditions are addressed. Thermal management in VLSI circuits is becoming an integral part of the design, test, and manufacturing. Proper thermal management is the key to achieve high performance, quality and reliability. Performance and reliability of integrated circuits are strong functions of the junction temperature. A small increase in junction temperature may result in significant reduction in the device lifetime. This book reviews the significance of the junction temperature as a reliability measure under nominal and burn-in conditions. The latest research in the area of electro-thermal modeling of integrated circuits will also be presented. Recent models and associated CAD tools are covered and various techniques at the circuit and system levels are reviewed. Subsequently, the authors provide an insight into the concept of thermal runaway and how it may best be avoided. A section on low temperature operation of integrated circuits concludes the book.
Author: Venkata Dinavahi
Publisher: Springer Nature
ISBN: 303086782X
Category : Technology & Engineering
Languages : en
Pages : 492
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Book Description
This textbook introduces methods of accelerating transient stability (dynamic) simulation and electromagnetic transient simulation on massively parallel processors for large-scale AC-DC grids – two of the most common and computationally onerous studies done by energy control centers and research laboratories for the planning, design, and operation of such integrated grids for ensuring the security and reliability of electric power. Simulation case studies provided in the book range from small didactic test circuits to realistic-sized AC-DC grids, and special emphasis is placed on detailed device-level multi-physics models for power system equipment and decomposition techniques for simulating large-scale systems. Parallel Dynamic and Transient Simulation of Large-Scale Power Systems: A High Performance Computing Solution is a comprehensive state-of-the-art guide for upper-level undergraduate and graduate students in power systems engineering. Practicing engineers, software developers, and scientists working in the power and energy industry will find it to be a timely and valuable reference for solving potential problems in their design and development activities. Detailed device-level electro-thermal modeling for power electronic systems in DC grids; Provides comprehensive dynamic and transient simulation of integrated large-scale AC-DC grids; Offers detailed models of renewable energy system models.
Author: Mourad Elsobky
Publisher: Cambridge University Press
ISBN: 1108983383
Category : Technology & Engineering
Languages : en
Pages : 92
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Book Description
Hybrid Systems-in-Foil (HySiF) is a concept that extends the potential of conventional More-than-More Systems-in/on-Package (SiPs and SoPs) to the flexible electronics world. In HySiF, an economical implementation of flexible electronic systems is possible by integrating a minimum number of embedded silicon chips and a maximum number of on-foil components. Here, the complementary characteristics of CMOS SoCs and larger area organic and printed electronics are combined in a HySiF-compatible polymeric substrate. Within the HySiF scope, the fabrication process steps and the integration design rules with all the accompanying boundary conditions concerning material compatibility, surface properties, and thermal budget, are defined. This Element serves as an introduction to the HySiF concept. A summary of recent ultra-thin chip fabrication and flexible packaging techniques is provided. Several bendable electronic components are presented demonstrating the benefits of HySiF. Finally, prototypes of flexible wireless sensor systems that adopt the HySiF concept are demonstrated.
Author: Shimeng Yu
Publisher: Springer Nature
ISBN: 3031020308
Category : Technology & Engineering
Languages : en
Pages : 71
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Book Description
RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Chapter 2 introduces the RRAM device fabrication techniques and methods to eliminate the forming process, and will show its scalability down to sub-10 nm regime. Then the device performances such as programming speed, variability control, and multi-level operation are presented, and finally the reliability issues such as cycling endurance and data retention are discussed. Chapter 3 discusses the RRAM physical mechanism, and the materials characterization techniques to observe the conductive filaments and the electrical characterization techniques to study the electronic conduction processes. It also presents the numerical device modeling techniques for simulating the evolution of the conductive filaments as well as the compact device modeling techniques for circuit-level design. Chapter 4 discusses the two common RRAM array architectures for large-scale integration: one-transistor-one-resistor (1T1R) and cross-point architecture with selector. The write/read schemes are presented and the peripheral circuitry design considerations are discussed. Finally, a 3D integration approach is introduced for building ultra-high density RRAM array. Chapter 5 is a brief summary and will give an outlook for RRAM’s potential novel applications beyond the NVM applications.
Author: M Jamal Deen
Publisher: World Scientific
ISBN: 9814488925
Category : Technology & Engineering
Languages : en
Pages : 422
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Book Description
CMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. Cutoff frequencies of about 50 GHz have been reported for 0.18 µm CMOS technology, and are expected to reach about 100 GHz when the feature size shrinks to 100 nm within a few years. This translates into CMOS circuit operating frequencies well into the GHz range, which covers the frequency range of many of today's popular wireless products, such as cell phones, GPS (Global Positioning System) and Bluetooth. Of course, the great interest in RF CMOS comes from the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. This book discusses many of the challenges facing the CMOS RF circuit designer in terms of device modeling and characterization, which are crucial issues in circuit simulation and design.
Author: Fabrizio Roccaforte
Publisher: Wiley-VCH
ISBN: 9783527347100
Category : Technology & Engineering
Languages : en
Pages : 464
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Book Description
The book "Nitride Semiconductor Technology" provides an overview of nitride semiconductors and their uses in optoelectronics and power electronics devices. It explains the physical properties of those materials as well as their growth methods. Their applications in high electron mobility transistors, vertical power devices, LEDs, laser diodes, and vertical-cavity surface-emitting lasers are discussed in detail. The book further examines reliability issues in these materials and puts forward perspectives of integrating them with 2D materials for novel high-frequency and high-power devices. In summary, it covers nitride semiconductor technology from materials to devices and provides the basis for further research.
Author: Pedram Khalili Amiri
Publisher: MDPI
ISBN: 3039285025
Category : Technology & Engineering
Languages : en
Pages : 276
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Book Description
Computing systems are undergoing a transformation from logic-centric towards memory-centric architectures, where overall performance and energy efficiency at the system level are determined by the density, performance, functionality and efficiency of the memory, rather than the logic sub-system. This is driven by the requirements of data-intensive applications in artificial intelligence, autonomous systems, and edge computing. We are at an exciting time in the semiconductor industry where several innovative device and technology concepts are being developed to respond to these demands, and capture shares of the fast growing market for AI-related hardware. This special issue is devoted to highlighting, discussing and presenting the latest advancements in this area, drawing on the best work on emerging memory devices including magnetic, resistive, phase change, and other types of memory. The special issue is interested in work that presents concepts, ideas, and recent progress ranging from materials, to memory devices, physics of switching mechanisms, circuits, and system applications, as well as progress in modeling and design tools. Contributions that bridge across several of these layers are especially encouraged.
