Identification and Characterization of Shallow Impurity States in Gallium Arsenide and Indium Phosphide Using Photothermal Ionization Spectroscopy PDF Download
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Author: Thomas Stanley Low
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ISBN:
Category :
Languages : en
Pages : 536
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Author: Thomas Stanley Low
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ISBN:
Category :
Languages : en
Pages : 536
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Author: Bun Lee
Publisher:
ISBN:
Category :
Languages : en
Pages : 316
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The incorporation and amphoteric behavior of Group IV impurities in high purity gallium arsenide (GaAs) and indium phosphide (InP) grown by various growth techniques have been quantitatively studied by employing the characterization techniques, Hall-effect measurements, photothermal ionization spectroscopy (PTIS), and photoluminescence (PL). These quantitative analyses have been made on over 500 different GaAs samples provided from about 50 different laboratories and 50 different InP samples from 15 different laboratories as grown by the growth techniques of liquid phase epitaxy (LPE), vapor phase epitaxy (VPE), molecular beam epitaxy (MBE), and metalorganic chemical vapor deposition (MOCVD). With these quantitative analyses, the incorporation and amphoteric behavior of Group IV impurities have been correlated with the growth techniques and various independent growth parameters, particularly V/III ratios and substrate orientations. The spectroscopic analysis indicates that the relative ordering of central cell correction of shallow donor impurities in InP are identical to that of GaAs, but the amphoteric behavior of Si in LPE InP is opposite to that in LPE GaAs. Although Ge was always more amphoteric than Si, the values of amphoteric ratios of both Si and Ge in GaAs (100) layers were not noticeably changed with varying V/III ratios or other growth conditions for all of the growth techniques. The orientation dependent amphoteric behavior of Si, Ge, and C in MBE and AsCl$sb3$-MBE GaAs samples strongly suggests that the surface kinetic reactions during epitaxial growth play the dominant role in the amphoteric behavior. Obviously, the above results on the amphoteric behavior cannot be explained by the simple equilibrium thermodynamic consideration alone. The surface kinetic model has been developed to explain the amphoteric behavior of Group IV impurities in MBE and VPE GaAs. The major surface reactions for impurity incorporation involve adsorption, surface diffusion, dissociative chemisorption, and desorption, which are the rate limiting processes that can be different for different substrate orientation and different chemical impurity and/or source species used for the different growth techniques.
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Category : Dissertations, Academic
Languages : en
Pages : 652
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Author:
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ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 1016
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Author:
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Category : Dissertation abstracts
Languages : en
Pages : 696
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Author: Brian John Skromme
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Category :
Languages : en
Pages : 352
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Author:
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Category : Chemistry
Languages : en
Pages : 2002
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Author:
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Category : Physics
Languages : en
Pages : 890
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Author: Jun Xia
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Category :
Languages : en
Pages :
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Semi-insulating gallium arsenide (SI-GaAs) has gained great interest in recent years due to its wide application in optoelectronic devices and high-speed integrated circuits. An important feature of SI-GaAs is the high density of deep-level defect states, which control the electrical properties of the substrate by compensating the shallow defects. Over the years, deep-level transient spectroscopy (DLTS) and its variations have been the most effective tools employed for the characterization of deep-level defects. However, most of these techniques require a contact probe and tend to be quite restrictive in their applications' scope. In this thesis deep-level photo-thermal spectroscopy (DLPTS), an all-optical rate-window-based technique, is presented as a novel noncontact technique for the characterization of deep-level defects in SI-GaAs. The signal-generation mechanism for DLPTS is the super-bandgap excitation of carriers, and the sub-bandgap detection of the defect's thermal-emission process. Combined with the rate-window detection utilizing lock-in amplifiers, DLPTS measurements are performed in three different modalities: temperature-scan, pulse-rate scan, and time-scan. This work demonstrates that each mode provides unique information about the defect configuration, and, in combination, the modes offer a powerful tool for the study of defect properties and optoelectronic processes in SI-GaAs. A hierarchical carrier-emission theory is proposed to explain the thermal broadening (nonexponentiality) in photo-thermal spectra. The model is studied comparatively with the Gaussian distribution of activation energies, and their similarities demonstrate an ergodic equivalence of random energy distribution and the constrained hierarchical emission process. In addition, a rate-window gated photo-carrier radiometry (PCR) technique is developed. The original diffusion-based PCR theory is modified to reflect the signal domination by trap emission and capture rates in the absence of diffusion. Defect luminescence is collected and analyzed using photo-thermal temperature spectra and resonant detection combined with frequency scans. The study results in the identification of five radiative defect states and the defect-photoluminescence quantum efficiency.
Author: Kam Tai Chan
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 450
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