Hot-Carrier Reliability of MOS VLSI Circuits PDF Download
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Author: Yusuf Leblebici
Publisher: Springer Science & Business Media
ISBN: 1461532507
Category : Technology & Engineering
Languages : en
Pages : 223
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Book Description
As the complexity and the density of VLSI chips increase with shrinking design rules, the evaluation of long-term reliability of MOS VLSI circuits is becoming an important problem. The assessment and improvement of reliability on the circuit level should be based on both the failure mode analysis and the basic understanding of the physical failure mechanisms observed in integrated circuits. Hot-carrier induced degrada tion of MOS transistor characteristics is one of the primary mechanisms affecting the long-term reliability of MOS VLSI circuits. It is likely to become even more important in future generation chips, since the down ward scaling of transistor dimensions without proportional scaling of the operating voltage aggravates this problem. A thorough understanding of the physical mechanisms leading to hot-carrier related degradation of MOS transistors is a prerequisite for accurate circuit reliability evaluation. It is also being recognized that important reliability concerns other than the post-manufacture reliability qualification need to be addressed rigorously early in the design phase. The development and use of accurate reliability simulation tools are therefore crucial for early assessment and improvement of circuit reliability : Once the long-term reliability of the circuit is estimated through simulation, the results can be compared with predetermined reliability specifications or limits. If the predicted reliability does not satisfy the requirements, appropriate design modifications may be carried out to improve the resistance of the devices to degradation.
Author: Yusuf Leblebici
Publisher: Springer Science & Business Media
ISBN: 1461532507
Category : Technology & Engineering
Languages : en
Pages : 223
Get Book Here
Book Description
As the complexity and the density of VLSI chips increase with shrinking design rules, the evaluation of long-term reliability of MOS VLSI circuits is becoming an important problem. The assessment and improvement of reliability on the circuit level should be based on both the failure mode analysis and the basic understanding of the physical failure mechanisms observed in integrated circuits. Hot-carrier induced degrada tion of MOS transistor characteristics is one of the primary mechanisms affecting the long-term reliability of MOS VLSI circuits. It is likely to become even more important in future generation chips, since the down ward scaling of transistor dimensions without proportional scaling of the operating voltage aggravates this problem. A thorough understanding of the physical mechanisms leading to hot-carrier related degradation of MOS transistors is a prerequisite for accurate circuit reliability evaluation. It is also being recognized that important reliability concerns other than the post-manufacture reliability qualification need to be addressed rigorously early in the design phase. The development and use of accurate reliability simulation tools are therefore crucial for early assessment and improvement of circuit reliability : Once the long-term reliability of the circuit is estimated through simulation, the results can be compared with predetermined reliability specifications or limits. If the predicted reliability does not satisfy the requirements, appropriate design modifications may be carried out to improve the resistance of the devices to degradation.
Author: Cheng Wang
Publisher: Springer Science & Business Media
ISBN: 1468485474
Category : Science
Languages : en
Pages : 345
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Book Description
As device dimensions decrease, hot-carrier effects, which are due mainly to the presence of a high electric field inside the device, are becoming a major design concern. On the one hand, the detrimental effects-such as transconductance degradation and threshold shift-need to be minimized or, if possible, avoided altogether. On the other hand, performance such as the programming efficiency of nonvolatile memories or the carrier velocity inside the devices-need to be maintained or improved through the use of submicron technologies, even in the presence of a reduced power supply. As a result, one of the major challenges facing MOS design engineers today is to harness the hot-carrier effects so that, without sacrificing product performance, degradation can be kept to a minimum and a reli able design obtained. To accomplish this, the physical mechanisms re sponsible for the degradations should first be experimentally identified and characterized. With adequate models thus obtained, steps can be taken to optimize the design, so that an adequate level of quality assur ance in device or circuit performance can be achieved. This book ad dresses these hot-carrier design issues for MOS devices and circuits, and is used primarily as a professional guide for process development engi neers, device engineers, and circuit designers who are interested in the latest developments in hot-carrier degradation modeling and hot-carrier reliability design techniques. It may also be considered as a reference book for graduate students who have some research interests in this excit ing, yet sometime controversial, field.
Author: Eiji Takeda
Publisher: Elsevier
ISBN: 0080926223
Category : Technology & Engineering
Languages : en
Pages : 329
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Book Description
The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world. This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers. - Chapter one itself is a comprehensive review of MOS device physics which allows a reader with little background in MOS devices to pick up a sufficient amount of information to be able to follow the rest of the book - The book is written to allow the reader to learn about MOS Device Reliability in a relatively short amount of time, making the texts detailed treatment of hot-carrier effects especially useful and instructive to both researchers and others with varyingamounts of experience in the field - The logical organization of the book begins by discussing known principles, then progresses to empirical information and, finally, to practical solutions - Provides the most complete review of device degradation mechanisms as well as drain engineering methods - Contains the most extensive reference list on the subject
Author: Wai-Kai Chen
Publisher: CRC Press
ISBN: 9781420049671
Category : Technology & Engineering
Languages : en
Pages : 1788
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Book Description
Over the years, the fundamentals of VLSI technology have evolved to include a wide range of topics and a broad range of practices. To encompass such a vast amount of knowledge, The VLSI Handbook focuses on the key concepts, models, and equations that enable the electrical engineer to analyze, design, and predict the behavior of very large-scale integrated circuits. It provides the most up-to-date information on IC technology you can find. Using frequent examples, the Handbook stresses the fundamental theory behind professional applications. Focusing not only on the traditional design methods, it contains all relevant sources of information and tools to assist you in performing your job. This includes software, databases, standards, seminars, conferences and more. The VLSI Handbook answers all your needs in one comprehensive volume at a level that will enlighten and refresh the knowledge of experienced engineers and educate the novice. This one-source reference keeps you current on new techniques and procedures and serves as a review for standard practice. It will be your first choice when looking for a solution.
Author: Andrew B. Kahng
Publisher: Springer Science & Business Media
ISBN: 1475723636
Category : Technology & Engineering
Languages : en
Pages : 301
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Book Description
On Optimal Interconnections for VLSI describes, from a geometric perspective, algorithms for high-performance, high-density interconnections during the global and detailed routing phases of circuit layout. First, the book addresses area minimization, with a focus on near-optimal approximation algorithms for minimum-cost Steiner routing. In addition to practical implementations of recent methods, the implications of recent results on spanning tree degree bounds and the method of Zelikovsky are discussed. Second, the book addresses delay minimization, starting with a discussion of accurate, yet algorithmically tractable, delay models. Recent minimum-delay constructions are highlighted, including provably good cost-radius tradeoffs, critical-sink routing algorithms, Elmore delay-optimal routing, graph Steiner arborescences, non-tree routing, and wiresizing. Third, the book addresses skew minimization for clock routing and prescribed-delay routing formulations. The discussion starts with early matching-based constructions and goes on to treat zero-skew routing with provably minimum wirelength, as well as planar clock routing. Finally, the book concludes with a discussion of multiple (competing) objectives, i.e., how to optimize area, delay, skew, and other objectives simultaneously. These techniques are useful when the routing instance has heterogeneous resources or is highly congested, as in FPGA routing, multi-chip packaging, and very dense layouts. Throughout the book, the emphasis is on practical algorithms and a complete self-contained development. On Optimal Interconnections for VLSI will be of use to both circuit designers (CAD tool users) as well as researchers and developers in the area of performance-driven physical design.
Author:
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 218
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Book Description
Author: Hongjiang Song
Publisher: Lulu.com
ISBN: 1365161730
Category : Technology & Engineering
Languages : en
Pages : 510
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Book Description
This is the textbook for Dr. Hongjiang Song's EEE598: VLSI Analog Circuit Design Based Symmetry class in Ira A. Fulton Schools of Engineering at Arizona State University. The course introduces structural VLSI analog circuit design concepts and techniques for analog circuit blocks and systems, such as the operational amplifiers, PLL/DLL, bandgap reference, A/D D/A converters. Symmetry principles and associated circuit constraints, structures and methods are adopted to mitigate VLSI PVT and other variations for better circuit performance, functionality, and design productivity across multiple VLSI process nodes.
Author: Miloš Stanisavljević
Publisher: Springer Science & Business Media
ISBN: 1441962174
Category : Technology & Engineering
Languages : en
Pages : 215
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Book Description
This book is intended to give a general overview of reliability, faults, fault models, nanotechnology, nanodevices, fault-tolerant architectures and reliability evaluation techniques. Additionally, the book provides an in depth state-of-the-art research results and methods for fault tolerance as well as the methodology for designing fault-tolerant systems out of highly unreliable components.
Author: Hisham Z. Massoud
Publisher:
ISBN:
Category : Nature
Languages : en
Pages : 562
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Book Description
Author: John M. Cohn
Publisher: Springer Science & Business Media
ISBN: 1461527562
Category : Technology & Engineering
Languages : en
Pages : 299
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Book Description
This book presents a detailed summary of research on automatic layout of device-level analog circuits that was undertaken in the late 1980s and early 1990s at Carnegie Mellon University. We focus on the work behind the creation of the tools called KOAN and ANAGRAM II, which form part of the core of the CMU ACACIA analog CAD system. KOAN is a device placer for custom analog cells; ANANGRAM II a detailed area router for these analog cells. We strive to present the motivations behind the architecture of these tools, including detailed discussion of the subtle technology and circuit concerns that must be addressed in any successful analog or mixed-signal layout tool. Our approach in organizing the chapters of the book has been to present our algo rithms as a series of responses to these very real and very difficult analog layout problems. Finally, we present numerous examples of results generated by our algorithms. This research was supported in part by the Semiconductor Research Corpora tion, by the National Science Foundation, by Harris Semiconductor, and by the International Business Machines Corporation Resident Study Program. Finally, just for the record: John Cohn was the designer of the KOAN placer; David Garrod was the designer of the ANAGRAM II router (and its predeces sor, ANAGRAM I). This book was architected by all four authors, edited by John Cohn and Rob Rutenbar, and produced in finished form by John Cohn.
