Hot-Carrier Reliability of MOS VLSI Circuits PDF Download
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Author: Yusuf Leblebici
Publisher: Springer Science & Business Media
ISBN: 1461532507
Category : Technology & Engineering
Languages : en
Pages : 223
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Book Description
As the complexity and the density of VLSI chips increase with shrinking design rules, the evaluation of long-term reliability of MOS VLSI circuits is becoming an important problem. The assessment and improvement of reliability on the circuit level should be based on both the failure mode analysis and the basic understanding of the physical failure mechanisms observed in integrated circuits. Hot-carrier induced degrada tion of MOS transistor characteristics is one of the primary mechanisms affecting the long-term reliability of MOS VLSI circuits. It is likely to become even more important in future generation chips, since the down ward scaling of transistor dimensions without proportional scaling of the operating voltage aggravates this problem. A thorough understanding of the physical mechanisms leading to hot-carrier related degradation of MOS transistors is a prerequisite for accurate circuit reliability evaluation. It is also being recognized that important reliability concerns other than the post-manufacture reliability qualification need to be addressed rigorously early in the design phase. The development and use of accurate reliability simulation tools are therefore crucial for early assessment and improvement of circuit reliability : Once the long-term reliability of the circuit is estimated through simulation, the results can be compared with predetermined reliability specifications or limits. If the predicted reliability does not satisfy the requirements, appropriate design modifications may be carried out to improve the resistance of the devices to degradation.
Author: Yusuf Leblebici
Publisher: Springer Science & Business Media
ISBN: 1461532507
Category : Technology & Engineering
Languages : en
Pages : 223
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Book Description
As the complexity and the density of VLSI chips increase with shrinking design rules, the evaluation of long-term reliability of MOS VLSI circuits is becoming an important problem. The assessment and improvement of reliability on the circuit level should be based on both the failure mode analysis and the basic understanding of the physical failure mechanisms observed in integrated circuits. Hot-carrier induced degrada tion of MOS transistor characteristics is one of the primary mechanisms affecting the long-term reliability of MOS VLSI circuits. It is likely to become even more important in future generation chips, since the down ward scaling of transistor dimensions without proportional scaling of the operating voltage aggravates this problem. A thorough understanding of the physical mechanisms leading to hot-carrier related degradation of MOS transistors is a prerequisite for accurate circuit reliability evaluation. It is also being recognized that important reliability concerns other than the post-manufacture reliability qualification need to be addressed rigorously early in the design phase. The development and use of accurate reliability simulation tools are therefore crucial for early assessment and improvement of circuit reliability : Once the long-term reliability of the circuit is estimated through simulation, the results can be compared with predetermined reliability specifications or limits. If the predicted reliability does not satisfy the requirements, appropriate design modifications may be carried out to improve the resistance of the devices to degradation.
Author: Khandker Nazrul Quader
Publisher:
ISBN:
Category :
Languages : en
Pages : 368
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Book Description
Author: Jone Fang Chen
Publisher:
ISBN:
Category :
Languages : en
Pages : 242
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Author: Wenjie Jiang
Publisher:
ISBN:
Category :
Languages : en
Pages : 218
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Book Description
Author: Tibor Grasser
Publisher: Springer
ISBN: 3319089943
Category : Technology & Engineering
Languages : en
Pages : 518
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Book Description
This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.
Author: Eiji Takeda
Publisher: Elsevier
ISBN: 0080926223
Category : Technology & Engineering
Languages : en
Pages : 329
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Book Description
The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world. This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers. Chapter one itself is a comprehensive review of MOS device physics which allows a reader with little background in MOS devices to pick up a sufficient amount of information to be able to follow the rest of the book The book is written to allow the reader to learn about MOS Device Reliability in a relatively short amount of time, making the texts detailed treatment of hot-carrier effects especially useful and instructive to both researchers and others with varyingamounts of experience in the field The logical organization of the book begins by discussing known principles, then progresses to empirical information and, finally, to practical solutions Provides the most complete review of device degradation mechanisms as well as drain engineering methods Contains the most extensive reference list on the subject
Author: Michael Pecht
Publisher: CRC Press
ISBN: 1351443569
Category : Technology & Engineering
Languages : en
Pages : 228
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Book Description
Achieving cost-effective performance over time requires an organized, disciplined, and time-phased approach to product design, development, qualification, manufacture, and in-service management. Guidebook for Managing Silicon Chip Reliability examines the principal failure mechanisms associated with modern integrated circuits and describes common practices used to resolve them. This quick reference on semiconductor reliability addresses the key question: How will the understanding of failure mechanisms affect the future? Chapters discuss: failure sites, operational loads, and failure mechanism intrinsic device sensitivities electromigration hot carrier aging time dependent dielectric breakdown mechanical stress induced migration alpha particle sensitivity electrostatic discharge (ESD) and electrical overstress latch-up qualification screening guidelines for designing reliability Guidebook for Managing Silicon Chip Reliability focuses on device failure and causes throughout - providing a thorough framework on how to model the mechanism, test for defects, and avoid and manage damage. It will serve as an exceptional resource for electrical engineers as well as mechanical engineers working in the field of electronic packaging.
Author: Huy X. P. Le
Publisher:
ISBN:
Category :
Languages : en
Pages : 232
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Book Description
Author: Arman Vassighi
Publisher: Springer Science & Business Media
ISBN: 0387297499
Category : Technology & Engineering
Languages : en
Pages : 188
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Book Description
In Thermal and Power Management of Integrated Circuits, power and thermal management issues in integrated circuits during normal operating conditions and stress operating conditions are addressed. Thermal management in VLSI circuits is becoming an integral part of the design, test, and manufacturing. Proper thermal management is the key to achieve high performance, quality and reliability. Performance and reliability of integrated circuits are strong functions of the junction temperature. A small increase in junction temperature may result in significant reduction in the device lifetime. This book reviews the significance of the junction temperature as a reliability measure under nominal and burn-in conditions. The latest research in the area of electro-thermal modeling of integrated circuits will also be presented. Recent models and associated CAD tools are covered and various techniques at the circuit and system levels are reviewed. Subsequently, the authors provide an insight into the concept of thermal runaway and how it may best be avoided. A section on low temperature operation of integrated circuits concludes the book.
Author: Huy X. P. Le
Publisher:
ISBN:
Category :
Languages : en
Pages : 108
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Book Description
