Hot-Carrier Reliability of MOS VLSI Circuits PDF Download
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Author: Yusuf Leblebici
Publisher: Springer Science & Business Media
ISBN: 1461532507
Category : Technology & Engineering
Languages : en
Pages : 223
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Book Description
As the complexity and the density of VLSI chips increase with shrinking design rules, the evaluation of long-term reliability of MOS VLSI circuits is becoming an important problem. The assessment and improvement of reliability on the circuit level should be based on both the failure mode analysis and the basic understanding of the physical failure mechanisms observed in integrated circuits. Hot-carrier induced degrada tion of MOS transistor characteristics is one of the primary mechanisms affecting the long-term reliability of MOS VLSI circuits. It is likely to become even more important in future generation chips, since the down ward scaling of transistor dimensions without proportional scaling of the operating voltage aggravates this problem. A thorough understanding of the physical mechanisms leading to hot-carrier related degradation of MOS transistors is a prerequisite for accurate circuit reliability evaluation. It is also being recognized that important reliability concerns other than the post-manufacture reliability qualification need to be addressed rigorously early in the design phase. The development and use of accurate reliability simulation tools are therefore crucial for early assessment and improvement of circuit reliability : Once the long-term reliability of the circuit is estimated through simulation, the results can be compared with predetermined reliability specifications or limits. If the predicted reliability does not satisfy the requirements, appropriate design modifications may be carried out to improve the resistance of the devices to degradation.
Author: Yusuf Leblebici
Publisher: Springer Science & Business Media
ISBN: 1461532507
Category : Technology & Engineering
Languages : en
Pages : 223
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Book Description
As the complexity and the density of VLSI chips increase with shrinking design rules, the evaluation of long-term reliability of MOS VLSI circuits is becoming an important problem. The assessment and improvement of reliability on the circuit level should be based on both the failure mode analysis and the basic understanding of the physical failure mechanisms observed in integrated circuits. Hot-carrier induced degrada tion of MOS transistor characteristics is one of the primary mechanisms affecting the long-term reliability of MOS VLSI circuits. It is likely to become even more important in future generation chips, since the down ward scaling of transistor dimensions without proportional scaling of the operating voltage aggravates this problem. A thorough understanding of the physical mechanisms leading to hot-carrier related degradation of MOS transistors is a prerequisite for accurate circuit reliability evaluation. It is also being recognized that important reliability concerns other than the post-manufacture reliability qualification need to be addressed rigorously early in the design phase. The development and use of accurate reliability simulation tools are therefore crucial for early assessment and improvement of circuit reliability : Once the long-term reliability of the circuit is estimated through simulation, the results can be compared with predetermined reliability specifications or limits. If the predicted reliability does not satisfy the requirements, appropriate design modifications may be carried out to improve the resistance of the devices to degradation.
Author: Jone Fang Chen
Publisher:
ISBN:
Category :
Languages : en
Pages : 242
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Book Description
Author: Miloš Stanisavljević
Publisher: Springer Science & Business Media
ISBN: 1441962174
Category : Technology & Engineering
Languages : en
Pages : 215
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Book Description
This book is intended to give a general overview of reliability, faults, fault models, nanotechnology, nanodevices, fault-tolerant architectures and reliability evaluation techniques. Additionally, the book provides an in depth state-of-the-art research results and methods for fault tolerance as well as the methodology for designing fault-tolerant systems out of highly unreliable components.
Author: Khandker Nazrul Quader
Publisher:
ISBN:
Category :
Languages : en
Pages : 368
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Book Description
Author: Sung-Mo Kang
Publisher: McGraw-Hill Science, Engineering & Mathematics
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 698
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Book Description
The second edition of this comprehensive text contains extensive revisions to reflect recent advances in technology and in circuit design practices. Recognizing that the area of digital integrated circuit design is evolving at an increasingly fast pace, every effort has been made to present state-of-the-art material on all subjects covered in the book. This book is primarily designed as a comprehensive text for senior level and first-year graduate level digital circuit design classes, as well as a reference for practicing engineers in the areas of IC design and VLSI.
Author:
Publisher: Elsevier
ISBN: 1782422250
Category : Technology & Engineering
Languages : en
Pages : 274
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Book Description
This book takes a holistic approach to reliability engineering for electrical and electronic systems by looking at the failure mechanisms, testing methods, failure analysis, characterisation techniques and prediction models that can be used to increase reliability for a range of devices. The text describes the reliability behavior of electrical and electronic systems. It takes an empirical scientific approach to reliability engineering to facilitate a greater understanding of operating conditions, failure mechanisms and the need for testing for a more realistic characterisation. After introducing the fundamentals and background to reliability theory, the text moves on to describe the methods of reliability analysis and charactersation across a wide range of applications. Takes a holistic approach to reliability engineering Looks at the failure mechanisms, testing methods, failure analysis, characterisation techniques and prediction models that can be used to increase reliability Facilitates a greater understanding of operating conditions, failure mechanisms and the need for testing for a more realistic characterisation
Author: John V. Guttag
Publisher:
ISBN:
Category : Computer science
Languages : en
Pages : 400
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Book Description
Author: Sung-Mo Kang
Publisher:
ISBN: 9780071243421
Category : Digital integrated circuits
Languages : en
Pages : 655
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Book Description
The fourth edition of CMOS Digital Integrated Circuits: Analysis and Design continues the well-established tradition of the earlier editions by offering the most comprehensive coverage of digital CMOS circuit design, as well as addressing state-of-the-art technology issues highlighted by the widespread use of nanometer-scale CMOS technologies. In this latest edition, virtually all chapters have been re-written, the transistor model equations and device parameters have been revised to reflect the sigificant changes that must be taken into account for new technology generations, and the material has been reinforced with up-to-date examples. The broad-ranging coverage of this textbook starts with the fundamentals of CMOS process technology, and continues with MOS transistor models, basic CMOS gates, interconnect effects, dynamic circuits, memory circuits, arithmetic building blocks, clock and I/O circuits, low power design techniques, design for manufacturability and design for testability.
Author: Nayef R. F. Al-Rodhan
Publisher: LIT Verlag Münster
ISBN: 3643800045
Category : Political Science
Languages : en
Pages : 322
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Book Description
This book is the result of a Symposium on Potential Global Strategic Catastrophes, which took place in Geneva, Switzerland in 2008. The catastrophes chosen do not include remote and less immediate events. Only those with the potential to produce multiple cascading strategic dilemmas for states and the international system were selected. These dilemmas include balancing the sovereign rights of states with human rights, transnational responsibilities and burden-sharing under occasional geopolitical uncertainties. The book deals with the theoretical foundations of coping with catastrophes and the relevant inter-state and organisational paradigms. Other sections address specific catastrophes and their potential consequences: pandemics, water crises, global warming, nanosecurity, nuclear catastrophes, financial meltdown, cyber crises, demographic imbalances and forced migrations, state failure and war, massive conventional terrorist attacks and threats to energy supply. Dr. Nayef R.F. Al-Rodhan is Senior Scholar in Geostrategy and Director of the Programme on the Geopolitical Implications of Globalisation and Transnational Security at the Geneva Centre for Security Policy, Geneva, Switzerland. "The tremendous power of globalisation unleashed some two decades ago demonstrates in fact how fragile the planet is. Never in history has man faced simultaneously seemingly unlimited opportunities and equally unlimited daunting threats and challenges. Potential Global Strategic Catastrophes is a remarkable publication based on the collective thoughts of some of the world's leading thinkers covering a broad spectrum of reality, the catastrophes that might ensue and the strategic implications. It is an excellent map for the 21st century." Jean-Pierre Lehmann, Professor of International Political Economy, IMD and Founding Director of The Evian Group, Lausanne, Switzerland.
Author:
Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 776
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Book Description
