Highly Efficient Linear CMOS Power Amplifiers for Wireless Communications

Highly Efficient Linear CMOS Power Amplifiers for Wireless Communications PDF Author: Ham Hee Jeon
Publisher:
ISBN:
Category : Amplifiers (Electronics)
Languages : en
Pages :

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Book Description
The rapidly expanding wireless market requires low cost, high integration and high performance of wireless communication systems. CMOS technology provides benefits of cost effectiveness and higher levels of integration. However, the design of highly efficient linear CMOS power amplifier that meets the requirement of advanced communication standards is a challenging task because of the inherent difficulties in CMOS technology. The objective of this research is to realize PAs for wireless communication systems that overcoming the drawbacks of CMOS process, and to develop design approaches that satisfying the demands of the industry. In this dissertation, a cascode bias technique is proposed for improving linearity and reliability of the multi-stage cascode CMOS PA. In addition, to achieve load variation immunity characteristic and to enhance matching and stability, a fully-integrated balanced PA is implemented in a 0.18-m CMOS process. A triple-mode balanced PA using switched quadrature coupler is also proposed, and this work saved a large amount of quiescent current and further improved the efficiency in the back-off power. For the low losses and a high quality factor of passive output combining, a transformer-based quadrature coupler was implemented using integrated passive device (IPD) process. Various practical approaches for linear CMOS PA are suggested with the verified results, and they demonstrate the potential PA design approach for WCDMA applications using a standard CMOS technology.

Highly Efficient Linear CMOS Power Amplifiers for Wireless Communications

Highly Efficient Linear CMOS Power Amplifiers for Wireless Communications PDF Author: Ham Hee Jeon
Publisher:
ISBN:
Category : Amplifiers (Electronics)
Languages : en
Pages :

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Book Description
The rapidly expanding wireless market requires low cost, high integration and high performance of wireless communication systems. CMOS technology provides benefits of cost effectiveness and higher levels of integration. However, the design of highly efficient linear CMOS power amplifier that meets the requirement of advanced communication standards is a challenging task because of the inherent difficulties in CMOS technology. The objective of this research is to realize PAs for wireless communication systems that overcoming the drawbacks of CMOS process, and to develop design approaches that satisfying the demands of the industry. In this dissertation, a cascode bias technique is proposed for improving linearity and reliability of the multi-stage cascode CMOS PA. In addition, to achieve load variation immunity characteristic and to enhance matching and stability, a fully-integrated balanced PA is implemented in a 0.18-m CMOS process. A triple-mode balanced PA using switched quadrature coupler is also proposed, and this work saved a large amount of quiescent current and further improved the efficiency in the back-off power. For the low losses and a high quality factor of passive output combining, a transformer-based quadrature coupler was implemented using integrated passive device (IPD) process. Various practical approaches for linear CMOS PA are suggested with the verified results, and they demonstrate the potential PA design approach for WCDMA applications using a standard CMOS technology.

Linear CMOS RF Power Amplifiers for Wireless Applications

Linear CMOS RF Power Amplifiers for Wireless Applications PDF Author: Paulo Augusto Dal Fabbro
Publisher: Springer Science & Business Media
ISBN: 9048193613
Category : Technology & Engineering
Languages : en
Pages : 171

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Book Description
Advances in electronics have pushed mankind to create devices, ranging from - credible gadgets to medical equipment to spacecraft instruments. More than that, modern society is getting used to—if not dependent on—the comfort, solutions, and astonishing amount of information brought by these devices. One ?eld that has continuously bene?tted from those advances is the radio frequency integrated c- cuit (RFIC) design, which in its turn has promoted countless bene?ts to the mankind as a payback. Wireless communications is one prominent example of what the - vances in electronics have enabled and their consequences to our daily life. How could anyone back in the eighties think of the possibilities opened by the wireless local area networks (WLANs) that can be found today in a host of places, such as public libraries, coffee shops, trains, to name just a few? How can a youngster, who lives this true WLAN experience nowadays, imagine a world without it? This book dealswith the design oflinearCMOS RF PowerAmpli?ers(PAs). The RF PA is a very important part of the RF transceiver, the device that enables wireless communications. Two important aspects that are key to keep the advances in RF PA design at an accelerate pace are treated: ef?ciency enhancement and frequen- tunable capability. For this purpose, the design of two different integrated circuits realizedina0. 11μmtechnologyispresented,eachoneaddressingadifferentaspect. With respect to ef?ciency enhancement, the design of a dynamic supply RF power ampli?er is treated, making up the material of Chaps. 2 to 4.

Highly Efficient CMOS Power Amplifiers at C- and S-Band for Low Supply Voltages

Highly Efficient CMOS Power Amplifiers at C- and S-Band for Low Supply Voltages PDF Author: Jörg Carls
Publisher: Jörg Vogt Verlag
ISBN: 3938860243
Category :
Languages : en
Pages : 162

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Book Description


RF CMOS Power Amplifiers: Theory, Design and Implementation

RF CMOS Power Amplifiers: Theory, Design and Implementation PDF Author: Mona M. Hella
Publisher: Springer Science & Business Media
ISBN: 0306473208
Category : Technology & Engineering
Languages : en
Pages : 107

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Book Description
RF CMOS Power Amplifiers: Theory Design and Implementation focuses on the design procedure and the testing issues of CMOS RF power amplifiers. This is the first monograph addressing RF CMOS power amplifier design for emerging wireless standards. The focus on power amplifiers for short is distance wireless personal and local area networks (PAN and LAN), however the design techniques are also applicable to emerging wide area networks (WAN) infrastructure using micro or pico cell networks. The book discusses CMOS power amplifier design principles and theory and describes the architectures and tardeoffs in designing linear and nonlinear power amplifiers. It then details design examples of RF CMOS power amplifiers for short distance wireless applications (e, g., Bluetooth, WLAN) including designs for multi-standard platforms. Design aspects of RF circuits in deep submicron CMOS are also discussed. RF CMOS Power Amplifiers: Theory Design and Implementation serves as a reference for RF IC design engineers and RD and R&D managers in industry, and for graduate students conducting research in wireless semiconductor IC design in general and with CMOS technology in particular.

Highly Efficient and Linear Reconfigurable Mm-Wave CMOS Power Amplifiers for 5g Mobile Communications

Highly Efficient and Linear Reconfigurable Mm-Wave CMOS Power Amplifiers for 5g Mobile Communications PDF Author: Sheikh Nijam Ali
Publisher:
ISBN:
Category :
Languages : en
Pages : 117

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Book Description
With the race to next-generation millimeter-wave (mm-wave) fifth-generation (5G) wireless technology, implementation of highly power-efficient transceivers has become an important research topic. Particularly, the design of high-efficiency and frequency-reconfigurable power amplifier (PA) in complementary-metal-oxide-semiconductor (CMOS) technology is of paramount importance as it enables longer battery life and improved thermal management at a low cost in smart portable-devices while supporting multi-standard 5G communications such as 28GHz, 37-40GHz etc. Simultaneously, a PA with large-bandwidth and high-linearity is highly desirable for 5G mobile communications as it can cover multiple wideband-channels with high-order complex-modulation schemes (i.e., 64/512-quadrature-amplitude-modulation (QAM)) while ensuring robust performances against process-voltage-temperature variations. So far, traditional PA architectures have failed to address these critical design challenges and performance goals. This dissertation presents three new architectures for the design of highly-efficient, highly-linear, wideband and frequency-reconfigurable CMOS PAs for mm-wave 5G cellular communications with 15-16dBm of output-power. First, a 40% power-added-efficiency (PAE) frequency-reconfigurable PA with a tunable gate-drain neutralization at 24GHz and 28GHz is investigated in 65nm CMOS. This is the very first demonstration of a frequency-reconfigurable CMOS PA at mm-wave frequencies using tunable-inductor and tunable-transformer. Second, a 25-35GHz neutralized Continuous Class-F (CCF) CMOS PA achieving 26% modulation-PAE at 1.5Gbps and 46.4% peak-PAE is developed. This design is the very first demonstration of a CCF PA at mm-wave, and the reported measured 46.4% PAE is the highest PAE among mm-wave CMOS PAs to-date. Finally, a 28GHz 41%-PAE linear CMOS PA architecture using a transformer-based amplitude-to-phase (AM-PM) pre-distortion correction technique for 5G is investigated and developed. The proposed linearizer adopts a transformer-based self-compensated pre-distortion network to correct a detrimental AM-PM distortion due to non-linear gate-source capacitance (Cgs) in CMOS PAs. This linearization method mitigates the large-gain reduction problem in traditionally used capacitor-based linearization approaches while consuming no extra-power or introducing additional circuity. Subsequently, significant improvement in modulated-PAE and linearity is achieved. These three PA architectures provide distinct merits of advancing the knowledge of high-linearity, high-efficiency, wideband and frequency-reconfigurable fully-integrated CMOS PA design at mm-wave for next-generation multi-Gbps 5G communications by presenting original circuit topologies, fully supported by analytical-equations, chip-fabrication and comprehensive large-signal measurement results.

High-Linearity CMOS RF Front-End Circuits

High-Linearity CMOS RF Front-End Circuits PDF Author: Yongwang Ding
Publisher: Springer Science & Business Media
ISBN: 0387238018
Category : Technology & Engineering
Languages : en
Pages : 142

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Book Description
This book focuses on high performance radio frequency integrated circuits (RF IC) design in CMOS. 1. Development of radio frequency ICs Wireless communications has been advancing rapidly in the past two decades. Many high performance systems have been developed, such as cellular systems (AMPS, GSM, TDMA, CDMA, W-CDMA, etc. ), GPS system (global po- tioning system) and WLAN (wireless local area network) systems. The rapid growth of VLSI technology in both digital circuits and analog circuits provides benefits for wireless communication systems. Twenty years ago not many p- ple could imagine millions of transistors in a single chip or a complete radio for size of a penny. Now not only complete radios have been put in a single chip, but also more and more functions have been realized by a single chip and at a much lower price. A radio transmits and receives electro-magnetic signals through the air. The signals are usually transmitted on high frequency carriers. For example, a t- ical voice signal requires only 30 Kilohertz bandwidth. When it is transmitted by a FM radio station, it is often carried by a frequency in the range of tens of megahertz to hundreds of megahertz. Usually a radio is categorized by its carrier frequency, such as 900 MHz radio or 5 GHz radio. In general, the higher the carrier frequency, the better the directivity, but the more difficult the radio design.

RF Power Amplifiers for Mobile Communications

RF Power Amplifiers for Mobile Communications PDF Author: Patrick Reynaert
Publisher: Springer Science & Business Media
ISBN: 1402051174
Category : Technology & Engineering
Languages : en
Pages : 259

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Book Description
This book tackles both high efficiency and high linearity power amplifier (PA) design in low-voltage CMOS. With its emphasis on theory, design and implementation, the book offers a guide for those actively involved in the design of fully integrated CMOS wireless transceivers. Offering mathematical background, as well as intuitive insight, the book is essential reading for RF design engineers and researchers and is also suitable as a text book.

RF and mm-Wave Power Generation in Silicon

RF and mm-Wave Power Generation in Silicon PDF Author: Hua Wang
Publisher: Academic Press
ISBN: 0124095224
Category : Technology & Engineering
Languages : en
Pages : 578

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Book Description
RF and mm-Wave Power Generation in Silicon presents the challenges and solutions of designing power amplifiers at RF and mm-Wave frequencies in a silicon-based process technology. It covers practical power amplifier design methodologies, energy- and spectrum-efficient power amplifier design examples in the RF frequency for cellular and wireless connectivity applications, and power amplifier and power generation designs for enabling new communication and sensing applications in the mm-Wave and THz frequencies. With this book you will learn: - Power amplifier design fundamentals and methodologies - Latest advances in silicon-based RF power amplifier architectures and designs and their integration in wireless communication systems - State-of-the-art mm-Wave/THz power amplifier and power generation circuits and systems in silicon - Extensive coverage from fundamentals to advanced design topics, focusing on various layers of abstraction: from device modeling and circuit design strategy to advanced digital and mixed-signal architectures for highly efficient and linear power amplifiers - New architectures for power amplifiers in the cellar and wireless connectivity covering detailed design methodologies and state-of-the-art performances - Detailed design techniques, trade-off analysis and design examples for efficiency enhancement at power back-off and linear amplification for spectrally-efficient non-constant envelope modulations - Extensive coverage of mm-Wave power-generation techniques from the early days of the 60 GHz research to current state-of the-art reconfigurable, digital mm-Wave PA architectures - Detailed analysis of power generation challenges in the higher mm-Wave and THz frequencies and novel technical solutions for a wide range for potential applications, including ultrafast wireless communication to sensing, imaging and spectroscopy - Contributions from the world-class experts from both academia and industry

High Efficiency Switching CMOS Power Amplifiers for Wireless Communications

High Efficiency Switching CMOS Power Amplifiers for Wireless Communications PDF Author: Ockgoo Lee
Publisher:
ISBN:
Category : Amplifiers (Electronics)
Languages : en
Pages :

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Book Description
High-efficiency performance is one of the most important requirements of power : amplifiers (PAs) for wireless applications. However, the design of highly efficient CMOS.

Advances in Analog and RF IC Design for Wireless Communication Systems

Advances in Analog and RF IC Design for Wireless Communication Systems PDF Author: Mustafa Acar
Publisher: Elsevier Inc. Chapters
ISBN: 0128064501
Category : Technology & Engineering
Languages : en
Pages : 51

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Book Description
This chapter presents high-efficiency power amplifiers (PAs) for wireless infrastructure. It starts by stating the importance of high efficiency and the historical evolution in base station PA concepts. It then introduces the current solution, the Doherty PA. After explaining the fundamentals of the Doherty PA, a novel implementation achieving more than 35% drain efficiency across a 6dB power back-off range and up to 20W peak power between 1.7 and 2.3GHz is given. Afterwards, a future PA concept, switch-mode outphasing PA, is introduced. Theory and implementation details of a class-E outphasing PA achieving more than 60% drain efficiency across a 6dB power back-off range and up to 19W peak power between 1800 and 2050MHz is explained. By the end of the chapter, an essential part of switch-mode PAs, high voltage (up to 10V) and high frequency (up to 4GHz) drivers are presented.