High Microwave Power Submicron Gate Transistors on Indium Phosphide PDF Download
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Author: Michael D. Biedenbender
Publisher:
ISBN:
Category :
Languages : en
Pages : 406
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Author: Michael D. Biedenbender
Publisher:
ISBN:
Category :
Languages : en
Pages : 406
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Author: Gregory A. Johnson
Publisher:
ISBN:
Category :
Languages : en
Pages : 278
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Author: National Aeronautics and Space Administration (NASA)
Publisher: Createspace Independent Publishing Platform
ISBN: 9781722825386
Category :
Languages : en
Pages : 28
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Book Description
The microwave characteristics are presented at 18 and 20 GHz of submicron gate indium phosphide (InP) metal-insulator-semiconductor field-effect transistors (MISFET's) for high output power density applications. InP power MISFET's were fabricated and the output power density was investigated as a function of drain-source spacing. The best output power density and gain were obtained for drain-source spacing of 3 microns. The output power density is 2.7 times greater than was previously measured for InP MISFET's at 18 and 20 GHz, and the power-added efficiency also increased. Biedenbender, M. D. and Kapoor, Vik J. and Shalkhauser, K. A. and Messick, L. J. and Nguyen, R. and Schmitz, D. and Juergensen, H. Glenn Research Center ...
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Category : Electrooptical devices
Languages : en
Pages : 602
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Author:
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ISBN:
Category : Electronics
Languages : en
Pages : 474
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Author: Daniel Gerard Ballegeer
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Category :
Languages : en
Pages :
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InP-based heterostructure field effect transistors (HFETs) have, over the past several years, demonstrated microwave performance capabilities superior to those of GaAs-based and Si-based transistors. In particular, InGaAs/InAlAs modulation-doped field effect transistors (MODFETs) have exhibited world-record unity current gain frequencies ($fsb{t}$s) as well as extremely high power cutoff frequencies ($fsb{rm max}$s) and have, therefore, become the optimum devices for small-signal applications at high frequencies, particularly in low-noise applications. Despite these strengths, InP-based HFETs have inherent weaknesses which limit their capabilities for large-signal, high output power applications. Due to a combination of the poor Schottky characteristics of InAlAs, which is often the material in contact with the metal gate, and the small bandgap of InGaAs, which is the material often used for the channel, the devices typically have lower breakdown voltages than their GaAs counterparts. However, because of the phenomenally high values of $fsb{t}$ and $fsb{rm max}$ obtainable for these devices, there has been a growing desire to overcome these weaknesses in order that the devices can be used for high-power applications at microwave frequencies. The subject of this work is the investigation of the possibility of designing InP-based HFETs for use as high-power devices. The emphasis is not on obtaining a world-record high frequency power device; instead, the focus is on the critical issues involved when designing the devices for high power applications. Hence, the goal is to obtain an in-depth understanding of the internal physics of the FETs when they are operating as power devices, and in so doing, attempt to arrive at designs and techniques which will overcome some of the limitations of InP-based HFETs.
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Category : Aeronautics
Languages : en
Pages : 836
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Author: Ronald Waldo Grundbacher
Publisher:
ISBN:
Category :
Languages : en
Pages : 256
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The need for high-power, low-noise transistors operating at frequencies of 1GHz and above has accelerated over the past several years, because applications in consumer markets, including telecommunications products, have increased dramatically. Transistors in the silicon system are having difficulty providing the high-power, low-noise characteristics at operation above 1 GHz. Transistors based on InP and GaAs, which include HBTs, MESFETs, and HEMTs, have proven to be excellent devices and can provide high-power, low-noise capabilities at frequencies of 100 GHz and beyond. Issues of importance for high-power microwave transistors include breakdown mechanisms, linearity, and material selection.
Author: Jente Benedict Kuang
Publisher:
ISBN:
Category :
Languages : en
Pages : 370
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Author:
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ISBN:
Category : Indium alloys
Languages : en
Pages : 672
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