Heterostructures on Silicon: One Step Further with Silicon PDF Download
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Author: Y. Nissim
Publisher: Springer Science & Business Media
ISBN: 9400909136
Category : Science
Languages : en
Pages : 361
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Book Description
In the field of logic circuits in microelectronics, the leadership of silicon is now strongly established due to the achievement of its technology. Near unity yield of one million transistor chips on very large wafers (6 inches today, 8 inches tomorrow) are currently accomplished in industry. The superiority of silicon over other material can be summarized as follow: - The Si/Si0 interface is the most perfect passivating interface ever 2 obtained (less than 10" e y-I cm2 interface state density) - Silicon has a large thermal conductivity so that large crystals can be pulled. - Silicon is a hard material so that large wafers can be handled safely. - Silicon is thermally stable up to 1100°C so that numerous metallurgical operations (oxydation, diffusion, annealing ... ) can be achieved safely. - There is profusion of silicon on earth so that the base silicon wafer is cheap. Unfortunatly, there are fundamental limits that cannot be overcome in silicon due to material properties: laser action, infra-red detection, high mobility for instance. The development of new technologies of deposition and growth has opened new possibilities for silicon based structures. The well known properties of silicon can now be extended and properly used in mixed structures for areas such as opto-electronics, high-speed devices. This has been pioneered by the integration of a GaAs light emitting diode on a silicon based structure by an MIT group in 1985.
Author: Y. Nissim
Publisher: Springer Science & Business Media
ISBN: 9400909136
Category : Science
Languages : en
Pages : 361
Get Book Here
Book Description
In the field of logic circuits in microelectronics, the leadership of silicon is now strongly established due to the achievement of its technology. Near unity yield of one million transistor chips on very large wafers (6 inches today, 8 inches tomorrow) are currently accomplished in industry. The superiority of silicon over other material can be summarized as follow: - The Si/Si0 interface is the most perfect passivating interface ever 2 obtained (less than 10" e y-I cm2 interface state density) - Silicon has a large thermal conductivity so that large crystals can be pulled. - Silicon is a hard material so that large wafers can be handled safely. - Silicon is thermally stable up to 1100°C so that numerous metallurgical operations (oxydation, diffusion, annealing ... ) can be achieved safely. - There is profusion of silicon on earth so that the base silicon wafer is cheap. Unfortunatly, there are fundamental limits that cannot be overcome in silicon due to material properties: laser action, infra-red detection, high mobility for instance. The development of new technologies of deposition and growth has opened new possibilities for silicon based structures. The well known properties of silicon can now be extended and properly used in mixed structures for areas such as opto-electronics, high-speed devices. This has been pioneered by the integration of a GaAs light emitting diode on a silicon based structure by an MIT group in 1985.
Author: J.L. Beeby
Publisher: Springer Science & Business Media
ISBN: 1468413481
Category : Technology & Engineering
Languages : en
Pages : 811
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Book Description
The NATO Special Programme Panel on Condensed Systems of Low Dimensionality began its work in 1985 at a time of considerable activity in the field. The Panel has since funded many Advanced Research Workshops, Advanced Study Institutes, Cooperative Research Grants and Research Visits across the breadth of its remit, which stretches from self-organizing organic molecules to semiconductor structures having two, one and zero dimensions. The funded activities, especially the workshops, have allowed researchers from within NATO countries to exchange ideas and work together at a period of development of the field when such interactions are most valuable. Such timely support has undoubtedly assisted the development of national programs, particularly in the countries of the alliance wishing to strengthen their science base. A closing Workshop to mark the end of the Panel's activities was organized in Marmaris, Turkey from April 23-27, 1990, with the same title as the Panel: Condensed systems of Low Dimensionality. This volume contains papers presented at that meeting, which sought to bring together chemists, physicists and engineers from across the spectrum of the Panel's activities to discuss topics of current interest in their special fields and to exchange ideas about the effects of low dimensionality. As the following pages show, this is a topic of extraordinary interest and challenge which produces entirely new scientific phenomena, and at the same time offers the possibility of novel technological applications.
Author: Shu-Ang Zhou
Publisher: John Wiley & Sons
ISBN: 9780471354406
Category : Technology & Engineering
Languages : en
Pages : 652
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Book Description
This book presents the interdisciplinary field of solid electrodynamics and its applications in superconductor and microwave technologies. It gives scientists and engineers the foundation necessary to deal with theoretical and applied electromagnetics, continuum mechanics, applied superconductivity, high-speed electronic circuit design, microwave engineering and transducer technology.
Author: Donglu Shi
Publisher: Elsevier
ISBN: 0080534171
Category : Technology & Engineering
Languages : en
Pages : 498
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Book Description
This book explores the fascinating field of high-temperature superconductivity. Basic concepts–including experimental techniques and theoretical issues–are discussed in a clear, systematic manner. In addition, the most recent research results in the measurements, materials synthesis and processing, and characterization of physical properties of high-temperature superconductors are presented. Researchers and students alike can use this book as a comprehensive introduction not only to superconductivity but also to materials-related research in electromagnetic ceramics. Special features of the book: - presents recent developments in vortex-state properties, defects characterization, and phase equilibrium - introduces basic concepts for experimental techniques at low temperatures and high magnetic fields - provides a valuable reference for materials-related research - discusses potential industrial applications of high-temperature superconductivity - includes novel processing technologies for thin film and bulk materials - suggests areas of research and specific problems whose solution can make high-Tc superconductors a practical reality
Author: John J. McKetta Jr
Publisher: CRC Press
ISBN: 9780824726010
Category : Science
Languages : en
Pages : 490
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Book Description
"Written by engineers for engineers (with over 150 International Editorial Advisory Board members),this highly lauded resource provides up-to-the-minute information on the chemical processes, methods, practices, products, and standards in the chemical, and related, industries. "
Author: K. Sumino
Publisher: Elsevier
ISBN: 0444600647
Category : Technology & Engineering
Languages : en
Pages : 817
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Book Description
Defect control in semiconductors is a key technology for realizing the ultimate possibilities of modern electronics. The basis of such control lies in an integrated knowledge of a variety of defect properties. From this viewpoint, the volume discusses defect-related problems in connection with defect control in semiconducting materials, such as silicon, III-V, II-VI compounds, organic semiconductors, heterostructure, etc.The conference brought together scientists in the field of fundamental research and engineers involved in application related to electronic devices in order to promote future research activity in both fields and establish a fundamental knowledge of defect control. The main emphasis of the 254 papers presented in this volume is on the control of the concentration, distribution, structural and electronic states of any types of defects including impurities as well as control of the electrical, optical and other activities of defects. Due to the extensive length of the contents, only the number of papers presented per session is listed below.
Author: H. Weinstock
Publisher: Springer Science & Business Media
ISBN: 940111918X
Category : Technology & Engineering
Languages : en
Pages : 460
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Book Description
This volume is based on the proceedings of the NATO-sponsored Advanced Studies Institute (ASn on The New Superconducting Electronics (held 9-20 August 1992 in Waterville Valley, New Hampshire USA). The contents herein are intended to provide an update to an earlier volume on the same subject (based on a NATO ASI held in 1988). Four years seems a relatively short time interval, and our title itself, featuring The New Superconducting Electronics, may appear somewhat pretentious. Nevertheless, we feel strongly that the ASI fostered a timely reexamination of the technical progress and application potential of this rapid-paced field. There are, indeed, many new avenues for technological innovation which were not envisioned or considered possible four years ago. The greatest advances by far have occurred with regard to oxide superconductors, the so-called high transition-temperature superconductors, known in short as HTS. These advances are mainly in the ability to fabricate both (1) high-quality, relatively large-area films for microwave filters and (2) multilayer device structures, principally superconducting-normal-superconducting (SNS) Josephson junctions, for superconducting-quantum-interference-device (SQUID) magnetometers. Additionally, we have seen the invention and development of the flux-flow transistor, a planar three-terminal device. During the earlier ASI only the very first HTS films with adequate critical-current density had just been fabricated, and these were of limited area and had high resistance for microwave current.
Author: Gerhard Fasol
Publisher: Springer Science & Business Media
ISBN: 1475765657
Category : Science
Languages : en
Pages : 661
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Book Description
Proceedings of a NATO ARW held in Venice, Italy, May 9-13, 1989
Author: Suresh C. Jain
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 328
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Book Description
Biaxial strain in coherent GeSi layers grown on Si substrates provides a powerful tool for tailoring bandgaps and band offsets. Extremely high electron and hole mobilities have been obtained in modulation-doped GeSi strained layer heterostructures. Ultra-high-speed Heterojunction Bipolar Transistors and MODFETs, and long wavelength (1 to 20 micrometre) IR Detectors have been fabricated using these layers. Quantum wells, ultra-thin period superlattices, and quantum dots can also be fabricated using the strained layers. These devices were previously implemented using III-V semiconductors. Now they can be fabricated using existing Si technology, which is mature and reliable. GeSi strained layer technology has made it possible to manufacture monolithic Si integrated circuits containing heterojunction devices.
Author: Ivan Vesselinov Markov
Publisher: World Scientific
ISBN: 981314386X
Category : Science
Languages : en
Pages : 633
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Book Description
'The book is well organized and is pedagogical. By discussing crystallization in pure systems, the author introduces and describes the important concepts, physical parameters and theoretical models pertaining to nucleation and growth of crystals … If you are a young investigator or a graduate student whose research involves understanding the fundamentals of crystallization including nucleation and growth, this book will be a treat for you. Readers who have a strong background in physical chemistry or thermal physics may find the book easy to read. Nevertheless, this book should be a good reference to have on the bookshelf if you are an experienced researcher whose interest crosses the path with the general topics of crystal growth.'Acta Crystallographica Section BThe processes of new phase formation and growth are of fundamental importance in numerous rapidly developing scientific fields such as modern materials science, micro- and optoelectronics, and environmental science. Crystal Growth for Beginners combines the depth of information in monographs, with the thorough analysis of review papers, and presents the resulting content at a level understandable by beginners in science. The book covers, in practice, all fundamental questions and aspects of nucleation, crystal growth, and epitaxy.This book is a non-eclectic presentation of this interdisciplinary topic in materials science. The third edition brings existing chapters up to date, and includes new chapters on the growth of nanowires by the vapor-liquid-solid mechanism, as well as illustrated short biographical texts about the scientists who introduced the basic ideas and concepts into the fields of nucleation, crystal growth and epitaxy. All formulae and equations are illustrated by examples that are of technological importance. The book presents not only the fundamentals but also the state of the art in the subject.Crystal Growth for Beginners is a valuable reference for both graduate students and researchers in materials science. The reader is required to possess some basic knowledge of mathematics, physics and thermodynamics.
