Hopping And Related Phenomena 5 - Proceedings Of The 5th International Conference PDF Download
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Author: C J Adkins
Publisher: World Scientific
ISBN: 9814552267
Category :
Languages : en
Pages : 374
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Book Description
The phenomenon of hopping, in which a particle executes a series of jumps between discrete states, has a fundamental role in a wide range of solid state transport phenomena. In these proceedings acknowledged experts in the field describe important recent progress in developing the phenomenology of hopping processes and applying it to different systems, including crystalline and amorphous semiconductors, glasses, polymers, mesoscopic conductors and high temperature superconductors.
Author: C J Adkins
Publisher: World Scientific
ISBN: 9814552267
Category :
Languages : en
Pages : 374
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Book Description
The phenomenon of hopping, in which a particle executes a series of jumps between discrete states, has a fundamental role in a wide range of solid state transport phenomena. In these proceedings acknowledged experts in the field describe important recent progress in developing the phenomenology of hopping processes and applying it to different systems, including crystalline and amorphous semiconductors, glasses, polymers, mesoscopic conductors and high temperature superconductors.
Author: Hellmut Fritzsche
Publisher: World Scientific
ISBN: 9814522074
Category :
Languages : en
Pages : 556
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Book Description
This review volume contains articles on the recent developments, new ideas, as well as controversial issues dealing with the general phenomena of hopping transport in disordered systems. Examples of hopping systems of current interest are polymers and biological materials, mesoscopic systems, two- and one-dimensional systems such as MOSFETs, semiconductors near the metal-nonmetal transition, and the new high temperature superconducting materials (in their normal state). The fundamental problems addressed include effects of static and dynamic interactions with phonons, Coulomb interaction, new magnetic effects due to coherent scattering, effects of high electric fields, and relaxation phenomena.
Author: E. Fred Schubert
Publisher: E. Fred Schubert
ISBN: 0986382639
Category : Science
Languages : en
Pages : 624
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Book Description
This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes various doping techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III-V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, autocompensation, and maximum attainable dopant concentration. Redistribution effects are important in semiconductor microstructures. Linear and non-linear diffusion, different microscopic diffusion mechanisms, surface segregation, surface drift, surface migration, impurity-induced disordering, and the respective physical driving mechanisms are illustrated. Topics related to basic impurity theory include the hydrogenic model for shallow impurities, linear screening, density of states, classical and quantum statistics, the law of mass action, as well as many analytic approximations for the Fermi-Dirac integral for three-, two- and one dimensional systems. The timely topic of highly doped semiconductors, including band tails, impurity bands, bandgap renormalization, the Mott transition, and the Burstein-Moss shift, is discussed as well. Doping is essential in many semiconductor heterostructures including high-mobility selectively doped heterostructures, quantum well and quantum barrier structures, doping superlattice structures and d-doping structures. Technologically important deep levels are summarized, including Fe, Cr, and the DX-center, the EL2 defect, and rare-earth impurities. The properties of deep levels are presented phenomenologically, including emission, capture, Shockley-Read recombination, the Poole-Frenkel effect, lattice relaxation, and other effects. The final chapter is dedicated to the experimental characterization of impurities. This book will be of interest to graduate students, researchers and development engineers in the fields of electrical engineering, materials science, physics, and chemistry working on semiconductors. The book may also be used as a text for graduate courses in electrical engineering and materials science.
Author: D.M. Rowe
Publisher: CRC Press
ISBN: 0429956673
Category : Technology & Engineering
Languages : en
Pages : 720
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Book Description
Thermoelectrics is the science and technology associated with thermoelectric converters, that is, the generation of electrical power by the Seebeck effect and refrigeration by the Peltier effect. Thermoelectric generators are being used in increasing numbers to provide electrical power in medical, military, and deep space applications where combinations of their desirable properties outweigh their relatively high cost and low generating efficiency. In recent years there also has been an increase in the requirement for thermoelectric coolers (Peltier devices) for use in infrared detectors and in optical communications. Information on thermoelectrics is not readily available as it is widely scattered throughout the literature. The Handbook centralizes this information in a convenient format under a single cover. Sixty of the world's foremost authorities on thermoelectrics have contributed to this Handbook. It is comprised of fifty-five chapters, a number of which contain previously unpublished material. The contents are arranged in eight sections: general principles and theoretical considerations, material preparation, measurement of thermoelectric properties, thermoelectric materials, thermoelectric generation, generator applications, thermoelectric refrigeration, and applications of thermoelectric cooling. The CRC Handbook of Thermoelectrics has a broad-based scope. It will interest researchers, technologists, and manufacturers, as well as students and the well-informed, non-specialist reader.
Author: C. Chien
Publisher: Springer Science & Business Media
ISBN: 1475713673
Category : Science
Languages : en
Pages : 550
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Book Description
In 1879, while a graduate student under Henry Rowland at the Physics Department of The Johns Hopkins University, Edwin Herbert Hall discovered what is now universally known as the Hall effect. A symposium was held at The Johns Hopkins University on November 13, 1979 to commemorate the lOOth anniversary of the discovery. Over 170 participants attended the symposium which included eleven in vited lectures and three speeches during the luncheon. During the past one hundred years, we have witnessed ever ex panding activities in the field of the Hall effect. The Hall effect is now an indispensable tool in the studies of many branches of condensed matter physics, especially in metals, semiconductors, and magnetic solids. Various components (over 200 million!) that utilize the Hall effect have been successfully incorporated into such devices as keyboards, automobile ignitions, gaussmeters, and satellites. This volume attempts to capture the important aspects of the Hall effect and its applications. It includes the papers presented at the symposium and eleven other invited papers. Detailed coverage of the Hall effect in amorphous and crystalline metals and alloys, in magnetic materials, in liquid metals, and in semiconductors is provided. Applications of the Hall effect in space technology and in studies of the aurora enrich the discussions of the Hall effect's utility in sensors and switches. The design and packaging of Hall elements in integrated circuit forms are illustrated.
Author: Dilip K Roy
Publisher: Universities Press
ISBN: 9788173714948
Category : Amorphous semiconductors
Languages : en
Pages : 492
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Book Description
Author: V. I. Fistul
Publisher: Springer Science & Business Media
ISBN: 146848821X
Category : Science
Languages : en
Pages : 428
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Book Description
Recently, there has been a considerable upsurge of interest in heavily doped semiconductors. This interest is due primarily to the expanding range of applications of such. materials. Moreover, the heavy doping of semiconductors produces new effects (the forma tion of impurity aggregates, the appearance of allowed states in the forbidden band, etc J, which are of great interest in solid-state physics. The rapid growth in the number of papers on heavily doped semiconductors makes it difficult to review the results obtained so far. Therefore, many investigations carried out in 1966-7, par ticularly those on AIIIBV semiconductors, are not discussed in the present monograph, which represents the state of the knowledge in 1965. Nevertheless, the author hopes that, in spite of this, the book will be useful. An attempt is made, first, to review investigations of heavily doped semiconductors from a certain viewpoint and, sec ondly, to suggest some ideas (Chap. 5) which may be controversial but which are intended to stimulate further studies of heavily doped semiconductors which can be regarded as a special case of dis ordered systems. The work of American scientists investigating heavily doped semiconductors, in particular the efforts of E. O. Kane, J. 1. Pan kove, R. N. Hall, R. A. Logan, W. G. Spitzer, F. A. Trumbore, and many others, is well known to Soviet investigators. It gives me pleasure to learn that Western readers will now have an - v vi PREFACE portunity to become acquainted with the work done in the USSR.
Author: Dieter K. Schroder
Publisher: John Wiley & Sons
ISBN: 0471739065
Category : Technology & Engineering
Languages : en
Pages : 800
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Book Description
This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Author: Wolfgang Göpel
Publisher: John Wiley & Sons
ISBN: 3527620583
Category : Technology & Engineering
Languages : en
Pages : 548
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Book Description
'Sensors' is the first self-contained series to deal with the whole area of sensors. It describes general aspects, technical and physical fundamentals, construction, function, applications and developments of the various types of sensors. This volume presents for the first time a comprehensive description of magnetic sensors with special emphasis placed upon technical and scientific fundamentals. It provides important definitions and a unique overview of concepts, and the nature and principles of magnetic fields. General questions concerning all types of magnetic sensors, such as those pertaining to material, noise, etc. are treated. Each chapter contains physical and mathematical fundamentals and applied technical concepts. In addition, each chapter presents an outline of the most important applications, measurement ranges and accuracy of sensing etc. This volume is an indispensable reference work and text book for both specialists and newcomers, researcher and developers.
Author: L.L. Chang
Publisher: Springer Science & Business Media
ISBN: 940095073X
Category : Technology & Engineering
Languages : en
Pages : 718
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Book Description
The NATO Advanced Study Institute on "Molecular Beam Epitaxy (MBE) and Heterostructures" was held at the Ettore Majorana Center for Scientific Culture, Erice, Italy, on March 7-19, 1983, the second course of the International School of Solid-State Device Re search. This volume contains the lectures presented at the Institute. Throughout the history of semiconductor development, the coupling between processing techniques and device structures for both scientific investigations and technological applications has time and again been demonstrated. Newly conceived ideas usually demand the ultimate in existing techniques, which often leads to process innova tions. The emergence of a process, on the other hand, invariably creates opportunities for device improvement and invention. This intimate relationship between the two has most recently been witnessed in MBE and heterostructures, the subject of this Institute. This volume is divided into several sections. Chapter 1 serves as an introduction by providing a perspective of the subject. This is followed by two sections, each containing four chapters, Chapters 2-5 addressing the principles of the MBE process and Chapters 6-9 describ ing its use in the growth of a variety of semiconductors and heteros tructures. The next two sections, Chapters to-II and Chapters 12-15, treat the theory and the electronic properties of the heterostructures, respectively. The focus is on energy quantization of the two dimensional electron system. Chapters 16-17 are devoted to device structures, including both field-effect transistors and lasers and detec tors.
