Author: Jiang Lu
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
A novel high-k gate dielectric material, i.e., hafnium-doped tantalum oxide (Hf-dopedTaOx), has been studied for the application of the future generation metal-oxide semiconductor field effect transistor (MOSFET). The film's electrical, chemical, and structural properties were investigated experimentally. The incorporation of Hf into TaOx impacted the electrical properties. The doping process improved the effective dielectric constant, reduced the fixed charge density, and increased the dielectric strength. The leakage current density also decreased with the Hf doping concentration. MOS capacitors with sub-2.0 nm equivalent oxide thickness (EOT) have been achieved with the lightly Hf-doped TaOx. The low leakage currents and high dielectric constants of the doped films were explained by their compositions and bond structures. The Hf-doped TaOx film is a potential high-k gate dielectric for future MOS transistors. A 5 Å tantalum nitride (TaNx) interface layer has been inserted between the Hf-doped TaOx films and the Si substrate to engineer the high-k/Si interface layer formation and properties. The electrical characterization result shows that the insertion of a 5 Å TaNx between the doped TaOx films and the Si substrate decreased the film's leakage current density and improved the effective dielectric constant (keffective) value. The improvement of these dielectric properties can be attributed to the formation of the TaOxNy interfacial layer after high temperature O2 annealing. The main drawback of the TaNx interface layer is the high interface density of states and hysteresis, which needs to be decreased. Advanced metal nitride gate electrodes, e.g., tantalum nitride, molybdenum nitride, and tungsten nitride, were investigated as the gate electrodes for atomic layer deposition (ALD) HfO2 high-k dielectric material. Their physical and electrical properties were affected by the post metallization annealing (PMA) treatment conditions. Work functions of these three gate electrodes are suitable for NMOS applications after 800°C PMA. Metal nitrides can be used as the gate electrode materials for the HfO2 high-k film. The novel high-k gate stack structures studied in this study are promising candidates to replace the traditional poly-Si-SiO2 gate stack structure for the future CMOS technology node.
Author: S.V. Jagadeesh Chandra
Publisher:
ISBN: 9783330346840
Category :
Languages : en
Pages :
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Book Description
Author: Samares Kar
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 330
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Book Description
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
A new high-k dielectric material, i.e., zirconium-doped tantalum oxide (Zr-doped TaOx), in the form of a sputter-deposited thin film with a thickness range of 5-100 nm, has been studied. Important applications of this new dielectric material include the gate dielectric layer for the next generation metal-oxide-semiconductor field effect transistor (MOSFET). Due to the aggressive device scaling in ultra-large-scale integrated circuitry (ULSI), the ultra-thin conventional gate oxide (SiO2) is unacceptable for many practical reasons. By replacing the SiO2 layer with a high dielectric constant material (high-k), many of the problems can be solved. In this study, a novel high-k dielectric thin film, i.e., TaO[subscript]x doped with Zr, was deposited and studied. The film's electrical, chemical, and structural properties were investigated experimentally. The Zr dopant concentration and the thermal treatment condition were studied with respect to gas composition, pressure, temperature, and annealing time. Interface layer formation and properties were studied with or without an inserted thin tantalum nitride (TaN[subscript]x) layer. The gate electrode material influence on the dielectric properties was also investigated. Four types of gate materials, i.e., aluminum (Al), molybdenum (Mo), molybdenum nitride (MoN), and tungsten nitride (WN), were used in this study. The films were analyzed with ESCA, XRD, SIMS, and TEM. Films were made into MOS capacitors and characterized using I-V and C-V curves. Many promising results were obtained using this kind of high-k film. It is potentially applicable to future MOS devices.
Author: Joseph Patrick Donnelly
Publisher:
ISBN:
Category :
Languages : en
Pages : 134
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Book Description
Author: Samares Kar
Publisher: The Electrochemical Society
ISBN: 1566775035
Category : Dielectrics
Languages : en
Pages : 565
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Book Description
This issue covers, in detail, all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 924
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Book Description
Author: Satishchandra B. Ogale
Publisher: Springer Science & Business Media
ISBN: 0387260897
Category : Technology & Engineering
Languages : en
Pages : 416
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Book Description
Oxides form a broad subject area of research and technology development which encompasses different disciplines such as materials science, solid state chemistry, physics etc. The aim of this book is to demonstrate the interplay of these fields and to provide an introduction to the techniques and methodologies involving film growth, characterization and device processing. The literature in this field is thus fairly scattered in different research journals covering one or the other aspect of the specific activity. This situation calls for a book that will consolidate this information and thus enable a beginner as well as an expert to get an overall perspective of the field, its foundations, and its projected progress.
Author: Se Jong Rhee
Publisher:
ISBN:
Category : Dielectrics
Languages : en
Pages :
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Book Description
Author: Daniel J. Jaeger
Publisher:
ISBN:
Category : Dielectric films
Languages : en
Pages : 292
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Book Description
"This work investigated high permittivity hafnium based dielectric films for use in future generation metal oxide semiconductor field-effect transistor (MOSFET) technologies. For the sub-100 nm MOS structure, the conventional SiO2 gate dielectric required is becoming too thin (
