Author: Thomas Richard Bramblett
Publisher:
ISBN:
Category :
Languages : en
Pages : 472
Book Description
Growth of Sil̳-̳x̳Gex̳ from Si2̳H6̳ and Ge2̳H6̳ by Gas-source Molecular Beam Epitaxy
SI1−yCy(001) Gas-source Molecular Beam Epitaxy from CH3SIH3 and SI2H6
Author: Yong-Lim Foo
Publisher:
ISBN:
Category :
Languages : en
Pages : 162
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 162
Book Description
Growth of Si, SiGe and Selective Epitaxy by Gas Source Molecular Beam Epitaxy
Author: Kinam Kim
Publisher:
ISBN:
Category :
Languages : en
Pages : 260
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 260
Book Description
Gas Source Molecular Beam Epitaxy
Author: Morton B. Panish
Publisher: Springer
ISBN:
Category : Science
Languages : en
Pages : 456
Book Description
The first book to present a unified treatment of hybrid source MBE and metalorganic MBE. Since metalorganic MBE permits selective area growth, the latest information on its application to the INP/GaInAs(P) system is presented. This system has been highlighted because it is one of rising importance, vital to optical communications systems, and has great potential for future ultra-highspeed electronics. The use of such analytical methods as high resolution x-ray diffraction, secondary ion mass spectroscopy, several photoluminescence methods, and the use of active devices for materials evaluation is shown in detail.
Publisher: Springer
ISBN:
Category : Science
Languages : en
Pages : 456
Book Description
The first book to present a unified treatment of hybrid source MBE and metalorganic MBE. Since metalorganic MBE permits selective area growth, the latest information on its application to the INP/GaInAs(P) system is presented. This system has been highlighted because it is one of rising importance, vital to optical communications systems, and has great potential for future ultra-highspeed electronics. The use of such analytical methods as high resolution x-ray diffraction, secondary ion mass spectroscopy, several photoluminescence methods, and the use of active devices for materials evaluation is shown in detail.
Growth of Si and Si(,1-x)Ge(,x) Thin Films Using Gas Source Molecular Beam Epitaxy
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 398
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 398
Book Description
The Photo-induced Deposition of Silicon and Germanium on Silicon (111) and the Effects of Germanium and Phosphorus on the Desorption of Hydrogen from Silicon (111)
Author: Gregory Batinica
Publisher:
ISBN:
Category :
Languages : en
Pages : 402
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 402
Book Description
Si(011) and Si1̳-̳x̳Gex̳(011) Gas-source Molecular Beam Epitaxy
Author: Nerissa Sue Taylor
Publisher:
ISBN:
Category :
Languages : en
Pages : 238
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 238
Book Description
Abstracts of Papers
Author: American Chemical Society
Publisher:
ISBN: 9780841227743
Category : Chemical engineering
Languages : en
Pages : 1132
Book Description
Publisher:
ISBN: 9780841227743
Category : Chemical engineering
Languages : en
Pages : 1132
Book Description
Gas Source Molecular Beam Epitaxy of Si, SiGe, and Selective Area Epitaxy for Investigation of Facet Growth in Group IV Heterostructures
Author: Gregory David U'Ren
Publisher:
ISBN:
Category :
Languages : en
Pages : 240
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 240
Book Description
Gas Source Molecular Beam Epitaxy Growth of ZnSe on Novel Buffer Layers
Author: K. Lu
Publisher:
ISBN:
Category :
Languages : en
Pages : 10
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 10
Book Description