Author: Gladys Felton
Publisher:
ISBN:
Category :
Languages : en
Pages : 216
Book Description
Growth of Beta Silicon Carbide in a Reduced Pressure Chemical Vapor Deposition System
Author: Gladys Felton
Publisher:
ISBN:
Category :
Languages : en
Pages : 216
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 216
Book Description
The Growth and Characterization of Beta Silicon Carbide ([beta]-Sic) Thin Films by Chemical Vapor Deposition in a Low Pressure Vertical Reactor
Author: Kenneth George Irvine
Publisher:
ISBN:
Category :
Languages : en
Pages : 170
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 170
Book Description
The Growth and Characterization of Beta Silicon Carbide (β-Sic) Thin Films by Chemical Vapor Deposition in a Low Pressure Vertical Reactor
Author: Kenneth George Irvine
Publisher:
ISBN:
Category :
Languages : en
Pages : 170
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 170
Book Description
The Growth of Beta Silicon Cardide (B-SiC) by the Reduced Pressure Chemical Vapor Deposition Method and Its Characterization
Author: Angela Jones
Publisher:
ISBN:
Category :
Languages : en
Pages : 250
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 250
Book Description
Epitaxial Growth of Beta-silicon Carbide Thin Films by the Chemical Vapor Deposition Technique
Author: Hai-pyng Peter Liaw
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 462
Book Description
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 462
Book Description
Single Crystal Epitaxy and Characterization of Beta-Silicon Carbide
Author: Robert F. Davis
Publisher:
ISBN:
Category :
Languages : en
Pages : 33
Book Description
The project involves the development of low pressure chemical vapor deposition and r-f sputtering techniques for the synthesis of single crystal thin films of beta-SiC. The CVD apparatus is being produced in-house and a detailed description of the design is provided herein. Theoretical CVD phase diagrams of the Si-C-H system are also being produced as a function of Si/Si+C and total pressure. Both reactive sputtering of Si in CH4 and normal sputtering of a SiC target are being readied. (Author).
Publisher:
ISBN:
Category :
Languages : en
Pages : 33
Book Description
The project involves the development of low pressure chemical vapor deposition and r-f sputtering techniques for the synthesis of single crystal thin films of beta-SiC. The CVD apparatus is being produced in-house and a detailed description of the design is provided herein. Theoretical CVD phase diagrams of the Si-C-H system are also being produced as a function of Si/Si+C and total pressure. Both reactive sputtering of Si in CH4 and normal sputtering of a SiC target are being readied. (Author).
Studies of Low Pressure Chemical Vapour Deposition of Beta Silicon Carbide
Author: Sajid Ishaq
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
Selective Epitaxial Growth of Silicon Carbide on Silicon by Low- Temperature Chemical Vapor Deposition
Author: Ying Gao
Publisher:
ISBN:
Category :
Languages : en
Pages : 242
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 242
Book Description
Some Factors Affecting the Growth of Beta Silicon Carbide
Author: Charles Edward Ryan
Publisher:
ISBN:
Category : Chlorine compounds
Languages : en
Pages : 28
Book Description
The report discusses the growth of beta silicon carbide by the hydrogen reduction of methyl trichlorine onto carbon substrates at 1500C. It is shown that alpha inclusions present are the rare 2H (Wurtzite) modification of silicon carbide and that their presence resulted from a vapor-liquid-solid growth mechanism which was dominated by impurities in the substrate. By carefully cleaning the substrate and purifying the methyltrichlorosilane, the alpha inclusions were eliminated. The 2H alpha crystals were then deliberately grown by introducing selected impurities locally on the substrate. Beta crystals were also intentionally grown by the vapor-liquid-solid technique by introducing appropriate impurities. Growth of beta silicon carbide from the melt is also briefly discussed. (Author).
Publisher:
ISBN:
Category : Chlorine compounds
Languages : en
Pages : 28
Book Description
The report discusses the growth of beta silicon carbide by the hydrogen reduction of methyl trichlorine onto carbon substrates at 1500C. It is shown that alpha inclusions present are the rare 2H (Wurtzite) modification of silicon carbide and that their presence resulted from a vapor-liquid-solid growth mechanism which was dominated by impurities in the substrate. By carefully cleaning the substrate and purifying the methyltrichlorosilane, the alpha inclusions were eliminated. The 2H alpha crystals were then deliberately grown by introducing selected impurities locally on the substrate. Beta crystals were also intentionally grown by the vapor-liquid-solid technique by introducing appropriate impurities. Growth of beta silicon carbide from the melt is also briefly discussed. (Author).
A Chemical Vapor Deposition System for the Growth of Silicon Carbide
Author: Abebe Mesfin
Publisher:
ISBN:
Category :
Languages : en
Pages : 84
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 84
Book Description