Author: Huyang Xie
Publisher:
ISBN:
Category :
Languages : en
Pages : 320
Book Description
Growth, Microstructure and Optical Properties of Epitaxial Lithium Tantalate Thin Films by Metalorganic Chemical Vapor Deposition
Author: Huyang Xie
Publisher:
ISBN:
Category :
Languages : en
Pages : 320
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 320
Book Description
Metalorganic Vapor Phase Epitaxy (MOVPE)
Author: Stuart Irvine
Publisher: John Wiley & Sons
ISBN: 1119313015
Category : Technology & Engineering
Languages : en
Pages : 582
Book Description
Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Publisher: John Wiley & Sons
ISBN: 1119313015
Category : Technology & Engineering
Languages : en
Pages : 582
Book Description
Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Ferroelectric Lithium Tantalate Thin Film for Optical Use by Metalorganic Chemical Vapor Deposition
Author: Huyang Xie
Publisher:
ISBN:
Category :
Languages : en
Pages : 186
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 186
Book Description
Substrate Effects on the Structure and Optical Properties of Epitaxial PbTiO3 Thin Films Prepared by Metal-organic Chemical Vapor Deposition
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Structural, Dielectric, and Optical Properties of Potassium Tantalate Niobate Thin Films Prepared by Metalorganic Chemical Vapor Deposition
Author: Barbara Michelle Nichols
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
The structure-property relations of potassium tantalate niobate (KTaxNb1-xO 3) thin films have been investigated to assess their viability as nonlinear optical materials. Single phase, epitaxial films were deposited by low pressure metalorganic chemical vapor deposition over the entire solid solution range. Under optimized growth conditions, the composition of the films could be controlled within 5 atomic percent.
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
The structure-property relations of potassium tantalate niobate (KTaxNb1-xO 3) thin films have been investigated to assess their viability as nonlinear optical materials. Single phase, epitaxial films were deposited by low pressure metalorganic chemical vapor deposition over the entire solid solution range. Under optimized growth conditions, the composition of the films could be controlled within 5 atomic percent.
A Study of Growth Mechanisms and Electrical and Optical Properties of Epitaxial Al[x] Ga[1-x]N Layers Grown by Atmospheric Pressure Metalorganic Chemical Vapor Deposition
Author: Keyvan Rahim Sayyah
Publisher:
ISBN:
Category : Aluminum nitride
Languages : en
Pages : 352
Book Description
Publisher:
ISBN:
Category : Aluminum nitride
Languages : en
Pages : 352
Book Description
Optical Properties of Epitaxial PLT Thin Films
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Metalorganic chemical vapor deposition was used to prepare epitaxial or highly oriented PLT (Pb[sub 1-x]La[sub x]TiO[sub 3]) thin films with x= 0.21-0.34. The growth of PLT films resulted in 3-D epitaxial heterostructures on a (100) surface of both MgO and KTaO[sub 3] substrates. The PLT film grown on a KTaO[sub 3] (100) substrate has a significantly lower minimum channeling yield compared to that grown on the MgO (100) substrate because of the smaller lattice mismatch associated with KTaO[sub 3]. Thickness and refractive indices at 435-1523 nm were measured by prism coupling. Measured film thickness of 570 nm was in good agreement with that obtained from RBS. Refractive index of the PLT film is smaller than that of PbTiO[sub 3], and its difference at[lambda]= 632.8 nm is about 2.5%. Dispersion of the refractive index was well fitted by a Sellmeier dispersion formula.
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Metalorganic chemical vapor deposition was used to prepare epitaxial or highly oriented PLT (Pb[sub 1-x]La[sub x]TiO[sub 3]) thin films with x= 0.21-0.34. The growth of PLT films resulted in 3-D epitaxial heterostructures on a (100) surface of both MgO and KTaO[sub 3] substrates. The PLT film grown on a KTaO[sub 3] (100) substrate has a significantly lower minimum channeling yield compared to that grown on the MgO (100) substrate because of the smaller lattice mismatch associated with KTaO[sub 3]. Thickness and refractive indices at 435-1523 nm were measured by prism coupling. Measured film thickness of 570 nm was in good agreement with that obtained from RBS. Refractive index of the PLT film is smaller than that of PbTiO[sub 3], and its difference at[lambda]= 632.8 nm is about 2.5%. Dispersion of the refractive index was well fitted by a Sellmeier dispersion formula.
Nitride Semiconductor Light-Emitting Diodes (LEDs)
Author: Jian-Jang Huang
Publisher: Woodhead Publishing
ISBN: 0081019432
Category : Technology & Engineering
Languages : en
Pages : 826
Book Description
Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies, and Applications, Second Edition reviews the fabrication, performance and applications of the technology, encompassing the state-of-the-art material and device development, along with considerations regarding nitride-based LED design. This updated edition is based on the latest research and advances, including two new chapters on LEDs for large displays and laser lighting. Chapters cover molecular beam epitaxy (MBE) growth of nitride semiconductors, modern metalorganic chemical vapor deposition (MOCVD) techniques, the growth of nitride-based materials, and gallium nitride (GaN)-on-sapphire and GaN-on-silicon technologies for LEDs. Nanostructured, non-polar and semi-polar nitride-based LEDs, as well as phosphor-coated nitride LEDs, are also discussed. The book also addresses the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots. Further chapters discuss the development of LED encapsulation technology and fundamental efficiency droop issues in gallium indium nitride (GaInN) LEDs. It is a technical resource for academics, physicists, materials scientists, electrical engineers, and those working in the lighting, consumer electronics, automotive, aviation, and communications sectors. Features new chapters on laser lighting, addressing the latest advances on this topic Reviews fabrication, performance, and applications of this technology that encompass the state-of-the-art material and device development Covers the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots Highlights applications of nitride LEDs, including liquid crystal display (LCD) backlighting, infra-red emitters, and automotive lighting Provides a comprehensive discussion of gallium nitride on both silicon and sapphire substrates
Publisher: Woodhead Publishing
ISBN: 0081019432
Category : Technology & Engineering
Languages : en
Pages : 826
Book Description
Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies, and Applications, Second Edition reviews the fabrication, performance and applications of the technology, encompassing the state-of-the-art material and device development, along with considerations regarding nitride-based LED design. This updated edition is based on the latest research and advances, including two new chapters on LEDs for large displays and laser lighting. Chapters cover molecular beam epitaxy (MBE) growth of nitride semiconductors, modern metalorganic chemical vapor deposition (MOCVD) techniques, the growth of nitride-based materials, and gallium nitride (GaN)-on-sapphire and GaN-on-silicon technologies for LEDs. Nanostructured, non-polar and semi-polar nitride-based LEDs, as well as phosphor-coated nitride LEDs, are also discussed. The book also addresses the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots. Further chapters discuss the development of LED encapsulation technology and fundamental efficiency droop issues in gallium indium nitride (GaInN) LEDs. It is a technical resource for academics, physicists, materials scientists, electrical engineers, and those working in the lighting, consumer electronics, automotive, aviation, and communications sectors. Features new chapters on laser lighting, addressing the latest advances on this topic Reviews fabrication, performance, and applications of this technology that encompass the state-of-the-art material and device development Covers the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots Highlights applications of nitride LEDs, including liquid crystal display (LCD) backlighting, infra-red emitters, and automotive lighting Provides a comprehensive discussion of gallium nitride on both silicon and sapphire substrates
Dissertation Abstracts International
Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 780
Book Description
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 780
Book Description
American Doctoral Dissertations
Author:
Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 848
Book Description
Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 848
Book Description