Growth Control, Structural Characterization, and Electronic Structure of Stranski-Krastanow InAs/GaAs(001) Quantum Dots PDF Download
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Author: Ildar Mukhametzhanov
Publisher:
ISBN:
Category :
Languages : en
Pages : 512
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Book Description
Author: Ildar Mukhametzhanov
Publisher:
ISBN:
Category :
Languages : en
Pages : 512
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Book Description
Author: Marius Grundmann
Publisher: Springer Science & Business Media
ISBN: 3642561497
Category : Science
Languages : en
Pages : 450
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Book Description
Traces the quest to use nanostructured media for novel and improved optoelectronic devices. Leading experts - among them Nobel laureate Zhores Alferov - write here about the fundamental concepts behind nano-optoelectronics, the material basis, physical phenomena, device physics and systems.
Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 812
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Author: Manori Vajira Chintha Gunasekera
Publisher:
ISBN:
Category : Physics
Languages : en
Pages :
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Book Description
The impact of growth kinetics on structural properties significantly affects optical and electronic performances of self-assembled Stranski-Krastanov (SK) quantum dots. Here and within the framework of the synthesis of archetype InAs/GaAs quantum dot system we have undertaken a systematic study on the evolution of dot facet orientation in terms diffraction characterization by the reflection high-energy electron diffraction (RHEED) technique. The existence of a sharp transition of facet arrangements and shapes near the onset of dot formation is investigated, and a dot structure bound by {2 5 11} facets is proposed. During further calculations, we observed asymmetric ripening of quantum dot facets at initial growth stages, and as the dot ripens, more symmetric facet arrangement to the incident direction was noted. Further, incorporating the correlation between dot structural properties and RHEED intensity features, we propose structures for quantum dots bounded by {1 3 6} and {1 (3 ) ̅5} facets for both asymmetric and symmetric situations. In addition, development of advanced quantum dot structures to fabricate wetting layer separated InAs quantum dots is implemented. Improvement of photoluminescence emission from InAs quantum dots embedded in a GaAs matrix is presented at the end of the work.
Author: Tyler Park
Publisher:
ISBN:
Category : Electronic dissertations
Languages : en
Pages : 85
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Book Description
InGaAs quantum dot chains were grown with a low-temperature variation of the Stranski-Krastanov method, the conventional epitaxial method. This new method seeks to reduce indium segregation and intermixing in addition to giving greater control in the growth process. We used photoluminescence spectroscopy techniques to characterize the quality and electronic structure of these samples. We have recently used a transmission electron microscope to show how the quantum dots vary with annealing temperature. Some questions relating to the morphology of the samples cannot be answered by photoluminescence spectroscopy alone. Using transmission electron microscopy, we verified flattening of the quantum dots with annealing temperature and resolved the chemical composition with cross-section cuts and plan view cuts.
Author:
Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 776
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Author:
Publisher: Newnes
ISBN: 0080932282
Category : Science
Languages : en
Pages : 3572
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Book Description
Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Author: Jiang Wu
Publisher: Springer Science & Business Media
ISBN: 1461481309
Category : Technology & Engineering
Languages : en
Pages : 383
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Book Description
A quantum dot molecule (QDM) is composed of two or more closely spaced quantum dots or “artificial atoms.” In recent years, QDMs have received much attention as an emerging new artificial quantum system. The interesting and unique coupling and energy transfer processes between the “artificial atoms” could substantially extend the range of possible applications of quantum nanostructures. This book reviews recent advances in the exciting and rapidly growing field of QDMs via contributions from some of the most prominent researchers in this scientific community. The book explores many interesting topics such as the epitaxial growth of QDMs, spectroscopic characterization, and QDM transistors, and bridges between the fundamental physics of novel materials and device applications for future information technology. Both theoretical and experimental approaches are considered. Quantum Dot Molecules can be recommended for electrical engineering and materials science department courses on the science and design of advanced and future electronic and optoelectronic devices.
Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 1904
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Book Description
Author: Motoichi Ohtsu
Publisher: Springer Science & Business Media
ISBN: 3642174817
Category : Science
Languages : en
Pages : 249
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Book Description
This book focuses on the recent progress in nanophotonics technology to be used to develop novel nano-optical devices, fabrication technology, and security systems. It begins with a review of the concept of dressed photons and applications to devices, fabrication, and systems; principles and applications. Further topics include: DNA process for quantum dot chain, photon enhanced emission microscopy, near field spectroscopy of metallic nanostructure, self-organized fabrication of composite semiconductor quantum dots, formation of metallic nanostructure, and nanophotonic information systems with security. These topics are reviewed by seven leading scientists. This overview is a variable resource for engineers and scientists working in the field of nanophotonics.
