Author: David Henry Tomich
Publisher:
ISBN:
Category :
Languages : en
Pages : 382
Book Description
Growth and Characterization of Type II InxGa1-xSb/InAs Strained Layer Superlattices
Author: David Henry Tomich
Publisher:
ISBN:
Category :
Languages : en
Pages : 382
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 382
Book Description
Optical Characterization of InxGa1-xSb/InAs Strained Layer Superlattices
Author: Keh-Young Adam Chi
Publisher:
ISBN:
Category : Infrared spectroscopy
Languages : en
Pages : 186
Book Description
Publisher:
ISBN:
Category : Infrared spectroscopy
Languages : en
Pages : 186
Book Description
Proceedings of the Sixth International Symposium on Long Wavelength Infrared Detectors and Arrays: Physics and Applications
Author: Sheng S. Li
Publisher: The Electrochemical Society
ISBN: 9781566772150
Category : Science
Languages : en
Pages : 258
Book Description
Publisher: The Electrochemical Society
ISBN: 9781566772150
Category : Science
Languages : en
Pages : 258
Book Description
Growth, Characterization and Device Applications of Strained Layer Superlattices
Author: Tsukuru Katsuyama
Publisher:
ISBN:
Category :
Languages : en
Pages : 244
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 244
Book Description
Materials Science and Technology: Strained-Layer Superlattices
Author:
Publisher: Academic Press
ISBN: 0080864309
Category : Technology & Engineering
Languages : en
Pages : 443
Book Description
The following blurb to be used for the AP Report and ATI only as both volumes will not appear together there.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this volume offers a comprehensive discussion of strained-layer superlattices and focuses on fabrication technology and applications of the material. This volume combines with Volume 32, Strained-Layer Superlattices: Physics, in this series to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.****The following previously approved blurb is to be used in all other direct mail and advertising as both volumes will be promoted together.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this two-volume survey offers a comprehensive discussion of the physics of strained-layer superlattices (Volume 32), as well as detailing fabrication technology and applications of the material (Volume 33). Although each volume is edited to stand alone, the two books combine to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.
Publisher: Academic Press
ISBN: 0080864309
Category : Technology & Engineering
Languages : en
Pages : 443
Book Description
The following blurb to be used for the AP Report and ATI only as both volumes will not appear together there.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this volume offers a comprehensive discussion of strained-layer superlattices and focuses on fabrication technology and applications of the material. This volume combines with Volume 32, Strained-Layer Superlattices: Physics, in this series to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.****The following previously approved blurb is to be used in all other direct mail and advertising as both volumes will be promoted together.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this two-volume survey offers a comprehensive discussion of the physics of strained-layer superlattices (Volume 32), as well as detailing fabrication technology and applications of the material (Volume 33). Although each volume is edited to stand alone, the two books combine to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.
Growth and Structural Characterization of Strained-layer SimGen Superlattices
Author: Manfred Martin Ospelt
Publisher:
ISBN:
Category :
Languages : de
Pages : 164
Book Description
Publisher:
ISBN:
Category :
Languages : de
Pages : 164
Book Description
Infrared Applications of Semiconductors II: Volume 484
Author: Donald L. McDaniel
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 720
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 720
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Dissertation Abstracts International
Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 740
Book Description
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 740
Book Description
Infrared Applications of Semiconductors
Author:
Publisher:
ISBN:
Category : Infrared detectors
Languages : en
Pages : 720
Book Description
Publisher:
ISBN:
Category : Infrared detectors
Languages : en
Pages : 720
Book Description
The Growth of InAs{sub 1-x}Sbx/InAs Strained-layer Superlattices by Metal-organic Chemical Vapor Deposition
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 14
Book Description
InAs{sub 1-x}Sbx/InAs strained-layer superlattice (SLS) semiconductors and thick epitaxial layers of InAs{sub 1-x}Sbx were grown under a variety of conditions by metal-organic chemical vapor deposition on InAs substrates. The III/V ratio was varied from 0.026 to 1.0 over a temperature range of 475--525C, at pressures of 200 to 660 torr and growth rates of 0.75 to 3.0?m/hour. The composition of the ternary can be predicted from the input gas molar flow rates using a thermodynamic model. At lower temperatures, the thermodynamic model must be modified to take account of the incomplete decomposition of arsine and trimethylantimony. These layers were characterized by optical microscopy, SIMS, and x-ray diffraction. The optical properties of these SLS̀s were determined by infrared photoluminescence and absorption measurements. The PL peak energies of the alloys̀ and the SLS̀s are consistently lower than the previously reported values for the bandgap of InAs{sub 1-x}Sbx alloys.
Publisher:
ISBN:
Category :
Languages : en
Pages : 14
Book Description
InAs{sub 1-x}Sbx/InAs strained-layer superlattice (SLS) semiconductors and thick epitaxial layers of InAs{sub 1-x}Sbx were grown under a variety of conditions by metal-organic chemical vapor deposition on InAs substrates. The III/V ratio was varied from 0.026 to 1.0 over a temperature range of 475--525C, at pressures of 200 to 660 torr and growth rates of 0.75 to 3.0?m/hour. The composition of the ternary can be predicted from the input gas molar flow rates using a thermodynamic model. At lower temperatures, the thermodynamic model must be modified to take account of the incomplete decomposition of arsine and trimethylantimony. These layers were characterized by optical microscopy, SIMS, and x-ray diffraction. The optical properties of these SLS̀s were determined by infrared photoluminescence and absorption measurements. The PL peak energies of the alloys̀ and the SLS̀s are consistently lower than the previously reported values for the bandgap of InAs{sub 1-x}Sbx alloys.