Author: Weidong Li
Publisher:
ISBN:
Category : Germanium compounds
Languages : en
Pages : 126
Book Description
Growth and Characterization of Epitaxial Ge1-xCx Thin Films on (100)Si
Author: Weidong Li
Publisher:
ISBN:
Category : Germanium compounds
Languages : en
Pages : 126
Book Description
Publisher:
ISBN:
Category : Germanium compounds
Languages : en
Pages : 126
Book Description
Epitaxial Growth and Characterization of II-VI-semiconductor, One Dimensional Nanostructures and Thin Films
Author: Zuoming Zhu
Publisher:
ISBN:
Category :
Languages : en
Pages : 290
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 290
Book Description
Nucleation, Epitaxial Growth, and Characterization of [beta]-SiC Thin Films on Si by Rapid Thermal Chemical Vapor Deposition
Author: JiPing Li
Publisher:
ISBN:
Category :
Languages : en
Pages : 278
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 278
Book Description
Growth and Characterization of Epitaxial Oxide Thin Films
Author: Ashish Garg
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Epitaxial oxide thin films are used in many technologically important device applications. This work deals with the deposition and characterization of epitaxial WO3 and SrBi2Ta2O9 (SBT) thin films on single crystal oxide substrates. WO3 thin films were chosen as a subject of study because of recent findings of superconductivity at surfaces and twin boundaries in the bulk form of this oxide. Highly epitaxial thin films would be desirable in order to be able to create a device within a film without patterning it, by locally creating superconducting regions (e.g. twins) within an otherwise defect free film by reducing or doping the film with Na. Films were deposited by reactive magnetron sputtering at various temperatures on single crystal SrTiO3 (100) and R-sapphire substrates. X-ray diffraction studies showed that the optimised films were highly (001) oriented, quality of epitaxy improving with decreasing deposition temperature. AFM studies revealed columnar growth of these films. Films were heat treated with Na vapour in order to reduce or dope them with Na. Low temperature measurements of the reduced films did not show existence of any superconductivity. SBT is a ferroelectric oxide and its thin films are attractive candidates for non-volatile ferroelectric random access memory (FRAM) applications. High structural anisotropy leads to a high degree of anisotropy in its ferroelectric properties which makes it essential to study epitaxial SBT films of different orientations. In this study, SBT films of different orientations were deposited on different single crystal substrates by pulsed laser ablation. Highly epitaxial c-axis oriented and smooth SBT films were deposited on SrTiO3 (100) substrates. AFM studies revealed the growth of these films by 3-D Stranski-Krastanov mode. However, these films did not exhibit any ferroelectric activity. Highly epitaxial (116)-oriented films were deposited on SrTiO3 (110) substrates. These films were also very smooth with root mean square (RMS) roughness of 15-20 Å. Films deposited on TiO2 (110) were partially a-/b-axis oriented and showed the formation of c-axis oriented SBT and many impurities. Completely a-/b-axis oriented SBT films were deposited on LaSrAlO4 (110) substrates. Films deposited at non-optimal growth temperatures showed the formation of many impurities. Attempts were also made towards depositing Sr2RuO4 films on LaSrAlO4 (110) substrates, which can act as a bottom electrode for ferroelectric SBT films.
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Epitaxial oxide thin films are used in many technologically important device applications. This work deals with the deposition and characterization of epitaxial WO3 and SrBi2Ta2O9 (SBT) thin films on single crystal oxide substrates. WO3 thin films were chosen as a subject of study because of recent findings of superconductivity at surfaces and twin boundaries in the bulk form of this oxide. Highly epitaxial thin films would be desirable in order to be able to create a device within a film without patterning it, by locally creating superconducting regions (e.g. twins) within an otherwise defect free film by reducing or doping the film with Na. Films were deposited by reactive magnetron sputtering at various temperatures on single crystal SrTiO3 (100) and R-sapphire substrates. X-ray diffraction studies showed that the optimised films were highly (001) oriented, quality of epitaxy improving with decreasing deposition temperature. AFM studies revealed columnar growth of these films. Films were heat treated with Na vapour in order to reduce or dope them with Na. Low temperature measurements of the reduced films did not show existence of any superconductivity. SBT is a ferroelectric oxide and its thin films are attractive candidates for non-volatile ferroelectric random access memory (FRAM) applications. High structural anisotropy leads to a high degree of anisotropy in its ferroelectric properties which makes it essential to study epitaxial SBT films of different orientations. In this study, SBT films of different orientations were deposited on different single crystal substrates by pulsed laser ablation. Highly epitaxial c-axis oriented and smooth SBT films were deposited on SrTiO3 (100) substrates. AFM studies revealed the growth of these films by 3-D Stranski-Krastanov mode. However, these films did not exhibit any ferroelectric activity. Highly epitaxial (116)-oriented films were deposited on SrTiO3 (110) substrates. These films were also very smooth with root mean square (RMS) roughness of 15-20 Å. Films deposited on TiO2 (110) were partially a-/b-axis oriented and showed the formation of c-axis oriented SBT and many impurities. Completely a-/b-axis oriented SBT films were deposited on LaSrAlO4 (110) substrates. Films deposited at non-optimal growth temperatures showed the formation of many impurities. Attempts were also made towards depositing Sr2RuO4 films on LaSrAlO4 (110) substrates, which can act as a bottom electrode for ferroelectric SBT films.
Growth, Characterization and Measurement of Epitaxial Sr2RuO4 Thin Films
Author: Jing Cao
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Epitaxial Growth and Characterization of Thin Films and Superlattices of Wide Band Gap II-VI Semiconductors Grown by Pulsed Laser Deposition
Author: Shengxi Duan
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 142
Book Description
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 142
Book Description
Characterization of Epitaxial Semiconductor Films
Author: Henry Kressel
Publisher: Elsevier Science & Technology
ISBN:
Category : Science
Languages : en
Pages : 236
Book Description
Publisher: Elsevier Science & Technology
ISBN:
Category : Science
Languages : en
Pages : 236
Book Description
Epitaxial Growth Part A
Author: J Matthews
Publisher: Elsevier
ISBN: 0323152120
Category : Science
Languages : en
Pages : 401
Book Description
Epitaxial Growth, Part A is a compilation of review articles that describe various aspects of the growth of single-crystal films on single-crystal substrates. The collection contains topics on the historical development of epitaxy, the nucleation of thin films, the structure of the interface between film and substrate, and the generation of defects during film growth. The text also provides descriptions of the methods used to prepare and examine thin films and a list of the overgrowth-substrate combinations studied. Mineralogists, materials engineers and scientists, and physicists will find this book a great source of insight.
Publisher: Elsevier
ISBN: 0323152120
Category : Science
Languages : en
Pages : 401
Book Description
Epitaxial Growth, Part A is a compilation of review articles that describe various aspects of the growth of single-crystal films on single-crystal substrates. The collection contains topics on the historical development of epitaxy, the nucleation of thin films, the structure of the interface between film and substrate, and the generation of defects during film growth. The text also provides descriptions of the methods used to prepare and examine thin films and a list of the overgrowth-substrate combinations studied. Mineralogists, materials engineers and scientists, and physicists will find this book a great source of insight.
Growth and Characterization of Epitaxial Films and Magnetic Multilayers Grown by Dc Sputtering
Author: Reza Loloee
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 486
Book Description
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 486
Book Description
Epitaxial Growth
Author: J. W. Matthews
Publisher: Elsevier
ISBN: 1483271811
Category : Science
Languages : en
Pages : 315
Book Description
Epitaxial Growth Part B is the second part of a collection of review articles that describe various aspects of the growth of single-crystal films on single-crystal substrates. The topics discussed are the nucleation of thin films, the structure of the interface between film and substrate, and the generation of defects during film growth. The methods used to prepare and examine thin films are described and a list of the overgrowth-substrate combinations studied so far is given.
Publisher: Elsevier
ISBN: 1483271811
Category : Science
Languages : en
Pages : 315
Book Description
Epitaxial Growth Part B is the second part of a collection of review articles that describe various aspects of the growth of single-crystal films on single-crystal substrates. The topics discussed are the nucleation of thin films, the structure of the interface between film and substrate, and the generation of defects during film growth. The methods used to prepare and examine thin films are described and a list of the overgrowth-substrate combinations studied so far is given.