Growth and Characterization of Cadmium Telluride Film Grown by Molecular Beam Epitaxy Technique PDF Download
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Author: Majid M. Hashemi
Publisher:
ISBN:
Category : Cadmium telluride
Languages : en
Pages : 94
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Book Description
Author: Majid M. Hashemi
Publisher:
ISBN:
Category : Cadmium telluride
Languages : en
Pages : 94
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Book Description
Author: Ashish Seth
Publisher:
ISBN:
Category : Cadmium alloys
Languages : en
Pages : 250
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Book Description
Author: Stuart Irvine
Publisher: John Wiley & Sons
ISBN: 1119313015
Category : Technology & Engineering
Languages : en
Pages : 582
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Book Description
Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Author: Robert Newton Bicknell
Publisher:
ISBN:
Category :
Languages : en
Pages : 214
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Author: Mohamed Henini
Publisher: Elsevier
ISBN: 0128121378
Category : Science
Languages : en
Pages : 790
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Book Description
Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Author: D. Yogi Goswami
Publisher: Springer Science & Business Media
ISBN: 3540759972
Category : Technology & Engineering
Languages : en
Pages : 3091
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Book Description
ISES Solar World Congress is the most important conference in the solar energy field around the world. The subject of ISES SWC 2007 is Solar Energy and Human Settlement, it is the first time that it is held in China. This proceedings consist of 600 papers and 30 invited papers, whose authors are top scientists and experts in the world. ISES SWC 2007 covers all aspects of renewable energy, including PV, collector, solar thermal electricity, wind, and biomass energy.
Author: Olanrewaju Sunday Ogedengbe
Publisher:
ISBN:
Category : Molecular beam epitaxy
Languages : en
Pages : 368
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Book Description
CdTe is one of the leading materials used in thin-film photovoltaic (PV) devices due to some of its basic properties such as its ability to permit both n- and p-type doping, its relatively high absorption coefficient for photons in the visible range, and its direct band gap of 1.514 eV at room temperature, which is near the optimal band gap for solar energy conversion. Despite the near optimal band gap, the highest power conversion efficiency in a CdTe solar cell to date, achieved using polycrystalline CdTe, stands at 21%. This is far less than the Shockley-Queisser limit, which is about 32% for a single-junction cell under AM 1.5 illumination condition. Research efforts have shown that short circuit current (Jsc) is near its theoretical limit, implying that strategies to improve cell efficiency will have to be contingent on improving open-circuit voltage (Voc) and fill factor. Heavy doping has the potential to improve Voc. There is also evidence that inclusion of a Cd1-xMgxTe barrier in a solar cell structure may improve open circuit voltage, and, ultimately, cell efficiency. Doped and undoped CdTe layers were grown by molecular beam epitaxy (MBE). Secondary ion mass spectrometry (SIMS) characterization was used to measure dopant concentration, while Hall measurement and the capacitance-voltage technique were used for determining carrier concentration. Photoluminescence intensity (PL-I) and time-resolved photoluminescence (TRPL) techniques were used for optical characterization. The incorporation and limits of iodine and arsenic dopants in CdTe were studied. Maximum n-type carrier concentrations of 7.4x1018 cm-3 for iodine-doped CdTe and 3x1017 cm-3 for iodine-doped Cd0.65Mg0.35Te were achieved. Studies suggest that electrically active doping with iodine is limited with dopant concentration much above these values. Dopant activation of about 80% was observed in most of the iodine-doped CdTe samples. The estimated activation energy is about 6 meV for CdTe and the value for Cd0.65Mg0.35Te is about 58 meV. Iodine-doped CdTe samples exhibit long lifetimes with no evidence of photoluminescence degradation with doping as high as 2x1018 cm-3 while indium shows substantial non-radiative recombination at carrier concentrations above 5x1016 cm-3. Also, maximum p-type carrier concentration of 2x1016 cm-3 for arsenic-doped CdTe was achieved. Dopant activation greater than 20% was observed in most of the arsenic-doped CdTe samples. The process compatibility of iodine and magnesium in CdTe was evaluated for the solar cell device. Iodine was shown to be thermally stable in CdTe at temperatures up to 600oC and magnesium showed a slow diffusion at 500oC. Doped CdTe structures were used to make solar cell device structures, where open circuit voltage up to 880 mV and fill factor up to ~60% were measured.
Author: John E. Ayers
Publisher: CRC Press
ISBN: 1482254360
Category : Technology & Engineering
Languages : en
Pages : 660
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Book Description
In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.
Author: B Gil
Publisher: World Scientific
ISBN: 9814548421
Category :
Languages : en
Pages : 714
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Book Description
This book develops the mathematics of differential geometry in a way more intelligible to physicists and other scientists interested in this field. This book is basically divided into 3 levels; level 0, the nearest to intuition and geometrical experience, is a short summary of the theory of curves and surfaces; level 1 repeats, comments and develops upon the traditional methods of tensor algebra analysis and level 2 is an introduction to the language of modern differential geometry. A final chapter (chapter IV) is devoted to fibre bundles and their applications to physics. Exercises are provided to amplify the text material.
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 704
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Book Description
