Gettering and Defect Engineering in Semiconductor Technology IV PDF Download
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Author: M. Kittler
Publisher: Trans Tech Publications Ltd
ISBN: 3035703019
Category : Technology & Engineering
Languages : en
Pages : 659
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Book Description
Proceedings of the 4th International Conference on Gettering and Defect Engineering In Semiconductor Technology (GADEST '91), Frankfurt, Germany, October 1991
Author: M. Kittler
Publisher: Trans Tech Publications Ltd
ISBN: 3035703019
Category : Technology & Engineering
Languages : en
Pages : 659
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Book Description
Proceedings of the 4th International Conference on Gettering and Defect Engineering In Semiconductor Technology (GADEST '91), Frankfurt, Germany, October 1991
Author: Martin Kittler
Publisher: Scitec Publications
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 634
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Book Description
Author:
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 844
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Book Description
Author: S. Ashok
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 1176
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Book Description
Proceedings of the San Francisco meeting of April-May 1992. Papers emphasize deliberate and controlled introduction and manipulation of defects in order to engineer some desired properties in semiconductor materials and devices. Topics include: defects in bulk crystals, and in thin films; defect characterization; hydrogen interaction; processing induction of defects; quantum wells; ion implantation. Annotation copyright by Book News, Inc., Portland, OR
Author: Peter Pichler
Publisher: Trans Tech Publications Ltd
ISBN: 3035700834
Category : Technology & Engineering
Languages : en
Pages : 492
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Book Description
Selected, peer reviewed papers from the GADEST 2015: Gettering and Defect Engineering in Semiconductor Technology, September 20-25, 2015, Bad Staffelstein, Germany
Author: Jo Nijs
Publisher: CRC Press
ISBN: 1000445062
Category : Science
Languages : en
Pages : 488
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Book Description
One of the first books to cover advanced silicon-based technologies, Advanced Silicon and Semiconducting Silicon Alloy-Based Materials and Devices presents important directions for research into silicon, its alloy-based semiconducting devices, and its development in commercial applications. The first section deals with single/mono crystalline silicon, focusing on the effects of heavy doping; the structure and electronic properties of defects and their impact on devices; the MBE of silicon, silicon alloys, and metals; CVD techniques for silicon and silicon germanium; the material properties of silicon germanium strained layers; silicon germanium heterojunction bipolar applications; FETs, IR detectors, and resonant tunneling devices in silicon, silicon germanium, and d-doped silicon; and the fascinating properties of crystalline silicon carbide and its applications. The second section explores polycrystalline silicon. It examines large grain polysilicon substrates for solar cells; the properties, analysis, and modeling of polysilicon TFTs; the technology of polysilicon TFTs in LCD displays; and the use of polycrystalline silicon and its alloys in VLSI applications. With contributors from leading academic and industrial research centers, this book provides wide coverage of fabrication techniques, material properties, and device applications.
Author: Peter Pichler
Publisher: Springer Science & Business Media
ISBN: 3709105978
Category : Technology & Engineering
Languages : en
Pages : 576
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Book Description
This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Author: Manoj Sachdev
Publisher: Springer Science & Business Media
ISBN: 0387465472
Category : Technology & Engineering
Languages : en
Pages : 343
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Book Description
The 2nd edition of defect oriented testing has been extensively updated. New chapters on Functional, Parametric Defect Models and Inductive fault Analysis and Yield Engineering have been added to provide a link between defect sources and yield. The chapter on RAM testing has been updated with focus on parametric and SRAM stability testing. Similarly, newer material has been incorporated in digital fault modeling and analog testing chapters. The strength of Defect Oriented Testing for nano-Metric CMOS VLSIs lies in its industrial relevance.
Author:
Publisher: Academic Press
ISBN: 0080864392
Category : Technology & Engineering
Languages : en
Pages : 711
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Book Description
This volume reviews the latest understanding of the behavior and roles of oxygen in silicon, which will carry the field into the ULSI era from the experimental and theoretical points of view. The fourteen chapters, written by recognized authorities representing industrial and academic institutions, cover thoroughly the oxygen related phenomena from the crystal growth to device fabrication processes, as well as indispensable diagnostic techniques for oxygen. - Comprehensive study of the behavior of oxygen in silicon - Discusses silicon crystals for VLSI and ULSI applications - Thorough coverage from crystal growth to device fabrication - Edited by technical experts in the field - Written by recognized authorities from industrial and academic institutions - Useful to graduate students, scientists in other disciplines, and active participants in the arena of silicon-based microelectronics research - 297 original line drawings
Author:
Publisher:
ISBN:
Category : Research
Languages : en
Pages : 536
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Book Description
