GaN Distributed Feedback Nanowire Lasers PDF Download
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Languages : en
Pages : 1
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Languages : en
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Author: Fumitaro Ishikawa
Publisher: CRC Press
ISBN: 1315340720
Category : Science
Languages : en
Pages : 420
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Book Description
One dimensional electronic materials are expected to be key components owing to their potential applications in nanoscale electronics, optics, energy storage, and biology. Besides, compound semiconductors have been greatly developed as epitaxial growth crystal materials. Molecular beam and metalorganic vapor phase epitaxy approaches are representative techniques achieving 0D–2D quantum well, wire, and dot semiconductor III-V heterostructures with precise structural accuracy with atomic resolution. Based on the background of those epitaxial techniques, high-quality, single-crystalline III-V heterostructures have been achieved. III-V Nanowires have been proposed for the next generation of nanoscale optical and electrical devices such as nanowire light emitting diodes, lasers, photovoltaics, and transistors. Key issues for the realization of those devices involve the superior mobility and optical properties of III-V materials (i.e., nitride-, phosphide-, and arsenide-related heterostructure systems). Further, the developed epitaxial growth technique enables electronic carrier control through the formation of quantum structures and precise doping, which can be introduced into the nanowire system. The growth can extend the functions of the material systems through the introduction of elements with large miscibility gap, or, alternatively, by the formation of hybrid heterostructures between semiconductors and another material systems. This book reviews recent progresses of such novel III-V semiconductor nanowires, covering a wide range of aspects from the epitaxial growth to the device applications. Prospects of such advanced 1D structures for nanoscience and nanotechnology are also discussed.
Author: Choudhury J. Praharaj
Publisher: John Wiley & Sons
ISBN: 111970863X
Category : Technology & Engineering
Languages : en
Pages : 196
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Book Description
Discover a comprehensive exploration of the foundations and frontiers of the optoelectronics technology of group-III nitrides and their ternary alloys In Group III-Nitride Semiconductor Optoelectronics, expert engineer Dr. Choudhury J. Praharaj delivers an insightful overview of the optoelectronic applications of group III-nitride semiconductors. The book covers all relevant aspects of optical emission and detection, including the challenges of optoelectronic integration and a detailed comparison with other material systems. The author discusses band structure and optical properties of III-nitride semiconductors, as well as the properties of their low-dimensional structures. He also describes different optoelectronic systems such as LEDs, lasers, photodetectors, and optoelectronic integrated circuits. Group III-Nitride Semiconductor Optoelectronics covers both the fundamentals of the field and the most cutting-edge discoveries. Detailed appendices contain Maxwell's equations in dielectric media and descriptions of time-dependent perturbation theory and light-matter interaction. Readers will also benefit from: A thorough introduction to the band structure and optical properties of group III-nitride semiconductors Comprehensive explorations of growth and doping of group III-nitride devices and heterostructures Practical discussions of the optical properties of low dimensional structures in group III-nitrides In-depth examinations of lasers and light-emitting diodes, other light-emitting devices, photodetectors, photovoltaics, and optoelectronic integrated circuits Concise treatments of the quantum optical properties of nitride semiconductor devices Perfect for researchers in electrical engineering, applied physics, and materials science, Group III-Nitride Semiconductor Optoelectronics is also a must-read resource for graduate students and industry practitioners in those fields seeking a state-of-the-art reference on the optoelectronics technology of group III-nitrides.
Author:
Publisher: Academic Press
ISBN: 012809723X
Category : Technology & Engineering
Languages : en
Pages : 490
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Book Description
III-Nitride Semiconductor Optoelectronics covers the latest breakthrough research and exciting developments in the field of III-nitride compound semiconductors. It includes important topics on the fundamentals of materials growth, characterization, and optoelectronic device applications of III-nitrides. Bulk, quantum well, quantum dot, and nanowire heterostructures are all thoroughly explored. - Contains the latest breakthrough research in III-nitride optoelectronics - Provides a comprehensive presentation that covers the fundamentals of materials growth and characterization and the design and performance characterization of state-of-the-art optoelectronic devices - Presents an in-depth discussion on III-nitride bulk, quantum well, quantum dot, and nanowire technologies
Author: Wengang (Wayne) Bi
Publisher: CRC Press
ISBN: 1351648055
Category : Science
Languages : en
Pages : 775
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Book Description
This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.
Author: Cunzhu Tong
Publisher: Elsevier
ISBN: 0128141638
Category : Science
Languages : en
Pages : 208
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Book Description
Nanoscale Semiconductor Lasers focuses on specific issues relating to laser nanomaterials and their use in laser technology. The book presents both fundamental theory and a thorough overview of the diverse range of applications that have been developed using laser technology based on novel nanostructures and nanomaterials. Technologies covered include nanocavity lasers, carbon dot lasers, 2D material lasers, plasmonic lasers, spasers, quantum dot lasers, quantum dash and nanowire lasers. Each chapter outlines the fundamentals of the topic and examines material and optical properties set alongside device properties, challenges, issues and trends. Dealing with a scope of materials from organic to carbon nanostructures and nanowires to semiconductor quantum dots, this book will be of interest to graduate students, researchers and scientific professionals in a wide range of fields relating to laser development and semiconductor technologies. - Provides an overview of the active field of nanostructured lasers, illustrating the latest topics and applications - Demonstrates how to connect different classes of material to specific applications - Gives an overview of several approaches to confine and control light emission and amplification using nanostructured materials and nano-scale cavities
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 2
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Author: Prasanta Kumar Basu
Publisher: CRC Press
ISBN: 1466561920
Category : Science
Languages : en
Pages : 551
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Book Description
Developed from the authors' classroom-tested material, Semiconductor Laser Theory takes a semiclassical approach to teaching the principles, structure, and applications of semiconductor lasers. Designed for graduate students in physics, electrical engineering, and materials science, the text covers many recent developments, including diode lasers u
Author: Anthony H. W. Choi
Publisher: CRC Press
ISBN: 9814463248
Category : Technology & Engineering
Languages : en
Pages : 527
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Book Description
An optical cavity confines light within its structure and constitutes an integral part of a laser device. Unlike traditional gas lasers, semiconductor lasers are invariably much smaller in dimensions, making optical confinement more critical than ever. In this book, modern methods that control and manipulate light at the micrometer and nanometer scales by using a variety of cavity geometries and demonstrate optical resonance from ultra-violet (UV) to infra-red (IR) bands across multiple material platforms are explored. The book has a comprehensive collection of chapters that cover a wide range of topics pertaining to resonance in optical cavities and are contributed by leading researchers in the field. The topics include theory, design, simulation, fabrication, and characterization of micrometer- and nanometer-scale structures and devices that support cavity resonance via various mechanisms such as Fabry–Pérot, whispering gallery, photonic bandgap, and plasmonic modes. The chapters discuss optical cavities that resonate from UV to IR wavelengths and are based on prominent III-V material systems, including Al, In, and Ga nitrides, ZnO, and GaAs.
Author: Charles Cornet
Publisher: Elsevier
ISBN: 0081010761
Category : Technology & Engineering
Languages : en
Pages : 180
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Book Description
Integrated Lasers on Silicon provides a comprehensive overview of the state-of-the-art use of lasers on silicon for photonic integration. The authors demonstrate the need for efficient laser sources on silicon, motivated by the development of on-board/on-chip optical interconnects and the different integration schemes available. The authors include detailed descriptions of Group IV-based lasers, followed by a presentation of the results obtained through the bonding approach (hybrid III-V lasers). The monolithic integration of III-V semiconductor lasers are explored, concluding with a discussion of the different kinds of cavity geometries benchmarked with respect to their potential integration on silicon in an industrial environment. - Features a clear description of the advantages, drawbacks, and challenges of laser integration on silicon - Serves as a staple reference in the general field of silicon photonics - Focuses on the promising developments of hybrid and monolithic III-V lasers on silicon, previously unreviewed - Discusses the different kinds of cavity geometries benchmarked with respect to their potential integration on silicon in an industrial environment
