Author: Mitra Dutta
Publisher: World Scientific
ISBN: 9789810242572
Category : Technology & Engineering
Languages : en
Pages : 458
Book Description
Foreword by Charles H Townes This volume includes highlights of the theories underlying the essential phenomena occurring in novel semiconductor lasers as well as the principles of operation of selected heterostructure lasers. To understand scattering processes in heterostructure lasers and related optoelectronic devices, it is essential to consider the role of dimensional confinement of charge carriers as well as acoustical and optical phonons in quantum structures. Indeed, it is important to consider the confinement of both phonons and carriers in the design and modeling of novel semiconductor lasers such as the tunnel injection laser, quantum well intersubband lasers, and quantum dot lasers. The full exploitation of dimensional confinement leads to the exciting new capability of scattering time engineering in novel semiconductor lasers.As a result of continuing advances in techniques for growing quantum heterostructures, recent developments are likely to be followed in coming years by many more advances in semiconductor lasers and optoelectronics. As our understanding of these devices and the ability to fabricate them grow, so does our need for more sophisticated theories and simulation methods bridging the gap between quantum and classical transport.
The Blue Laser Diode
Author: Shuji Nakamura
Publisher: Springer Science & Business Media
ISBN: 366203462X
Category : Science
Languages : en
Pages : 348
Book Description
In 1993, the author, Shuji Nakamura developed the first commercially available blue and green light-emitting diodes. Now he has made the most important breakthrough in solid state laser techniques to date - the first blue semiconductor laser based on GaN. Here, Dr. Nakamura discusses the physical concept and basic manufacturing technology of these new blue light-emitting and laser diodes. he shows how this represents a new era in commercial applications for semiconductors, including displays, road and railway signalling, lighting, scanners, optical data storage, and much more. Moreover, Nakamura provides fascinating background information on the extraordinary realisation of an extremely successful concept of research and development. Of interest to researchers as well as engineers.
Publisher: Springer Science & Business Media
ISBN: 366203462X
Category : Science
Languages : en
Pages : 348
Book Description
In 1993, the author, Shuji Nakamura developed the first commercially available blue and green light-emitting diodes. Now he has made the most important breakthrough in solid state laser techniques to date - the first blue semiconductor laser based on GaN. Here, Dr. Nakamura discusses the physical concept and basic manufacturing technology of these new blue light-emitting and laser diodes. he shows how this represents a new era in commercial applications for semiconductors, including displays, road and railway signalling, lighting, scanners, optical data storage, and much more. Moreover, Nakamura provides fascinating background information on the extraordinary realisation of an extremely successful concept of research and development. Of interest to researchers as well as engineers.
GaN-Based Laser Diodes
Author: Wolfgang G. Scheibenzuber
Publisher: Springer Science & Business Media
ISBN: 3642245382
Category : Science
Languages : en
Pages : 107
Book Description
The emergence of highly efficient short-wavelength laser diodes based on the III-V compound semiconductor GaN has not only enabled high-density optical data storage, but is also expected to revolutionize display applications. Moreover, a variety of scientific applications in biophotonics, materials research and quantum optics can benefit from these versatile and cost-efficient laser light sources in the near-UV to green spectral range. This thesis describes the device physics of GaN-based laser diodes, together with recent efforts to achieve longer emission wavelengths and short-pulse emission. Experimental and theoretical approaches are employed to address the individual device properties and optimize the laser diodes toward the requirements of specific applications.
Publisher: Springer Science & Business Media
ISBN: 3642245382
Category : Science
Languages : en
Pages : 107
Book Description
The emergence of highly efficient short-wavelength laser diodes based on the III-V compound semiconductor GaN has not only enabled high-density optical data storage, but is also expected to revolutionize display applications. Moreover, a variety of scientific applications in biophotonics, materials research and quantum optics can benefit from these versatile and cost-efficient laser light sources in the near-UV to green spectral range. This thesis describes the device physics of GaN-based laser diodes, together with recent efforts to achieve longer emission wavelengths and short-pulse emission. Experimental and theoretical approaches are employed to address the individual device properties and optimize the laser diodes toward the requirements of specific applications.
Design and fabrication of GaN-based laser diodes for single-mode and narrow-linewidth applications
Author: Luca Redaelli
Publisher: Cuvillier Verlag
ISBN: 3736945868
Category : Science
Languages : en
Pages : 177
Book Description
In this work, several aspects concerning (In,Al,Ga)N laser diodes with high spectral purity, designed for applications in spectroscopy, were studied. A complete fabrication process for ridgewaveguide laser diodes on GaN substrate was developed. The lateral size of the ridge waveguides was as narrow as 1.5 μm: this is necessary in order to achieve lateral single-mode lasing in (In,Al,Ga)N laser diodes. A peculiar property of (In,Al,Ga)N laser diodes is that, when the ridge is narrow, the threshold current strongly depends on the ridge etch depth. This phenomenon was investigated by fabricating laser diodes with different etch depths. For ridge widths below 2 μm, the threshold current of shallow-ridge devices was found to be more than two times larger than that of comparable deep-ridge devices. Moreover, in the lateral far-field patterns of shallow-ridge laser diodes, side-lobes were observed, which would support the hypothesis of strong index-antiguiding. The antiguiding factor at threshold was experimentally determined to be about 10, which is among the largest values ever published for (In,Al,Ga)N laser diodes. The devices were further studied by simulation, and the results confirmed that the carrier-induced index change in the quantum wells can compensate the lateral index step if the ridge is shallow. This, in turn, reduces the lateral optical confi nement, which increases the threshold current and generates side lobes in the far-fi eld patterns. Based on this research, blue and violet laser diodes suitable for packaging in TO cans and continuous-wave (CW) operation exceeding 50 mW were fabricated. An external cavity diode laser (ECDL) was also realized, which could be tuned over the spectral range 435 nm - 444 nm and provided a peak emission power of more than 27 mW CW at 439 nm. As an alternative approach to obtain a narrow spectral linewidth, the feasibility of monolithically integrated Bragg-gratings was studied.
Publisher: Cuvillier Verlag
ISBN: 3736945868
Category : Science
Languages : en
Pages : 177
Book Description
In this work, several aspects concerning (In,Al,Ga)N laser diodes with high spectral purity, designed for applications in spectroscopy, were studied. A complete fabrication process for ridgewaveguide laser diodes on GaN substrate was developed. The lateral size of the ridge waveguides was as narrow as 1.5 μm: this is necessary in order to achieve lateral single-mode lasing in (In,Al,Ga)N laser diodes. A peculiar property of (In,Al,Ga)N laser diodes is that, when the ridge is narrow, the threshold current strongly depends on the ridge etch depth. This phenomenon was investigated by fabricating laser diodes with different etch depths. For ridge widths below 2 μm, the threshold current of shallow-ridge devices was found to be more than two times larger than that of comparable deep-ridge devices. Moreover, in the lateral far-field patterns of shallow-ridge laser diodes, side-lobes were observed, which would support the hypothesis of strong index-antiguiding. The antiguiding factor at threshold was experimentally determined to be about 10, which is among the largest values ever published for (In,Al,Ga)N laser diodes. The devices were further studied by simulation, and the results confirmed that the carrier-induced index change in the quantum wells can compensate the lateral index step if the ridge is shallow. This, in turn, reduces the lateral optical confi nement, which increases the threshold current and generates side lobes in the far-fi eld patterns. Based on this research, blue and violet laser diodes suitable for packaging in TO cans and continuous-wave (CW) operation exceeding 50 mW were fabricated. An external cavity diode laser (ECDL) was also realized, which could be tuned over the spectral range 435 nm - 444 nm and provided a peak emission power of more than 27 mW CW at 439 nm. As an alternative approach to obtain a narrow spectral linewidth, the feasibility of monolithically integrated Bragg-gratings was studied.
Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes
Author: Shuji Nakamura
Publisher: CRC Press
ISBN: 9780748408368
Category : Science
Languages : en
Pages : 390
Book Description
The "blue laser" is an exciting new device used in physics. The potential is now being recognized for its development into a commercial lighting system using about a tenth of the power and with a thousand times the operating lifetime of a comparable conventional system. This comprehensive work introduces the subject at a level suitable for graduate students. It covers the basics physics of light emitting diodes (LEDs) and laser diodes (LDs) based on gallium nitride and related nitride semiconductors, and gives an outline of their structural, transport and optical properties, and the relevant device physics. It begins with the fundamentals, and covers both theory and experiment, as well as an examination of actual and potential device applications. Shuji Nakamura and Nichia Chemicals Industries made the initial breakthroughs in the field, and these have revealed that LEDs and LDs are a sophisticated physical phenomenon and a commercial reality.
Publisher: CRC Press
ISBN: 9780748408368
Category : Science
Languages : en
Pages : 390
Book Description
The "blue laser" is an exciting new device used in physics. The potential is now being recognized for its development into a commercial lighting system using about a tenth of the power and with a thousand times the operating lifetime of a comparable conventional system. This comprehensive work introduces the subject at a level suitable for graduate students. It covers the basics physics of light emitting diodes (LEDs) and laser diodes (LDs) based on gallium nitride and related nitride semiconductors, and gives an outline of their structural, transport and optical properties, and the relevant device physics. It begins with the fundamentals, and covers both theory and experiment, as well as an examination of actual and potential device applications. Shuji Nakamura and Nichia Chemicals Industries made the initial breakthroughs in the field, and these have revealed that LEDs and LDs are a sophisticated physical phenomenon and a commercial reality.
GaN-Based Laser Diodes
Author: Wolfgang G. Scheibenzuber
Publisher: Springer Science & Business Media
ISBN: 3642245374
Category : Science
Languages : en
Pages : 107
Book Description
The emergence of highly efficient short-wavelength laser diodes based on the III-V compound semiconductor GaN has not only enabled high-density optical data storage, but is also expected to revolutionize display applications. Moreover, a variety of scientific applications in biophotonics, materials research and quantum optics can benefit from these versatile and cost-efficient laser light sources in the near-UV to green spectral range. This thesis describes the device physics of GaN-based laser diodes, together with recent efforts to achieve longer emission wavelengths and short-pulse emission. Experimental and theoretical approaches are employed to address the individual device properties and optimize the laser diodes toward the requirements of specific applications.
Publisher: Springer Science & Business Media
ISBN: 3642245374
Category : Science
Languages : en
Pages : 107
Book Description
The emergence of highly efficient short-wavelength laser diodes based on the III-V compound semiconductor GaN has not only enabled high-density optical data storage, but is also expected to revolutionize display applications. Moreover, a variety of scientific applications in biophotonics, materials research and quantum optics can benefit from these versatile and cost-efficient laser light sources in the near-UV to green spectral range. This thesis describes the device physics of GaN-based laser diodes, together with recent efforts to achieve longer emission wavelengths and short-pulse emission. Experimental and theoretical approaches are employed to address the individual device properties and optimize the laser diodes toward the requirements of specific applications.
Nitride Semiconductor Technology
Author: Fabrizio Roccaforte
Publisher: Wiley-VCH
ISBN: 9783527347100
Category : Technology & Engineering
Languages : en
Pages : 464
Book Description
The book "Nitride Semiconductor Technology" provides an overview of nitride semiconductors and their uses in optoelectronics and power electronics devices. It explains the physical properties of those materials as well as their growth methods. Their applications in high electron mobility transistors, vertical power devices, LEDs, laser diodes, and vertical-cavity surface-emitting lasers are discussed in detail. The book further examines reliability issues in these materials and puts forward perspectives of integrating them with 2D materials for novel high-frequency and high-power devices. In summary, it covers nitride semiconductor technology from materials to devices and provides the basis for further research.
Publisher: Wiley-VCH
ISBN: 9783527347100
Category : Technology & Engineering
Languages : en
Pages : 464
Book Description
The book "Nitride Semiconductor Technology" provides an overview of nitride semiconductors and their uses in optoelectronics and power electronics devices. It explains the physical properties of those materials as well as their growth methods. Their applications in high electron mobility transistors, vertical power devices, LEDs, laser diodes, and vertical-cavity surface-emitting lasers are discussed in detail. The book further examines reliability issues in these materials and puts forward perspectives of integrating them with 2D materials for novel high-frequency and high-power devices. In summary, it covers nitride semiconductor technology from materials to devices and provides the basis for further research.
Diode Lasers and Photonic Integrated Circuits
Author: Larry A. Coldren
Publisher: John Wiley & Sons
ISBN: 1118148185
Category : Technology & Engineering
Languages : en
Pages : 752
Book Description
Diode Lasers and Photonic Integrated Circuits, Second Edition provides a comprehensive treatment of optical communication technology, its principles and theory, treating students as well as experienced engineers to an in-depth exploration of this field. Diode lasers are still of significant importance in the areas of optical communication, storage, and sensing. Using the the same well received theoretical foundations of the first edition, the Second Edition now introduces timely updates in the technology and in focus of the book. After 15 years of development in the field, this book will offer brand new and updated material on GaN-based and quantum-dot lasers, photonic IC technology, detectors, modulators and SOAs, DVDs and storage, eye diagrams and BER concepts, and DFB lasers. Appendices will also be expanded to include quantum-dot issues and more on the relation between spontaneous emission and gain.
Publisher: John Wiley & Sons
ISBN: 1118148185
Category : Technology & Engineering
Languages : en
Pages : 752
Book Description
Diode Lasers and Photonic Integrated Circuits, Second Edition provides a comprehensive treatment of optical communication technology, its principles and theory, treating students as well as experienced engineers to an in-depth exploration of this field. Diode lasers are still of significant importance in the areas of optical communication, storage, and sensing. Using the the same well received theoretical foundations of the first edition, the Second Edition now introduces timely updates in the technology and in focus of the book. After 15 years of development in the field, this book will offer brand new and updated material on GaN-based and quantum-dot lasers, photonic IC technology, detectors, modulators and SOAs, DVDs and storage, eye diagrams and BER concepts, and DFB lasers. Appendices will also be expanded to include quantum-dot issues and more on the relation between spontaneous emission and gain.
Applied Nanophotonics
Author: Sergey V. Gaponenko
Publisher: Cambridge University Press
ISBN: 1107145503
Category : Science
Languages : en
Pages : 453
Book Description
An accessible yet rigorous introduction to nanophotonics, covering basic principles, technology, and applications in lighting, lasers, and photovoltaics. Providing a wealth of information on materials and devices, and over 150 color figures, it is the 'go-to' guide for students in electrical engineering taking courses in nanophotonics.
Publisher: Cambridge University Press
ISBN: 1107145503
Category : Science
Languages : en
Pages : 453
Book Description
An accessible yet rigorous introduction to nanophotonics, covering basic principles, technology, and applications in lighting, lasers, and photovoltaics. Providing a wealth of information on materials and devices, and over 150 color figures, it is the 'go-to' guide for students in electrical engineering taking courses in nanophotonics.
Basics of Laser Physics
Author: Karl F. Renk
Publisher: Springer
ISBN: 331950651X
Category : Science
Languages : en
Pages : 677
Book Description
This textbook provides an introductory presentation of all types of lasers. It contains a general description of the laser, a theoretical treatment and a characterization of its operation as it deals with gas, solid state, free-electron and semiconductor lasers. This expanded and updated second edition of the book presents a description of the dynamics of free-electron laser oscillation using a model introduced in the first edition that allows a reader to understand basic properties of a free-electron laser and makes the difference to “conventional” lasers. The discussions and the treatment of equations are presented in a way that a reader can immediately follow. The book addresses graduate and undergraduate students in science and engineering, featuring problems with solutions and over 400 illustrations.
Publisher: Springer
ISBN: 331950651X
Category : Science
Languages : en
Pages : 677
Book Description
This textbook provides an introductory presentation of all types of lasers. It contains a general description of the laser, a theoretical treatment and a characterization of its operation as it deals with gas, solid state, free-electron and semiconductor lasers. This expanded and updated second edition of the book presents a description of the dynamics of free-electron laser oscillation using a model introduced in the first edition that allows a reader to understand basic properties of a free-electron laser and makes the difference to “conventional” lasers. The discussions and the treatment of equations are presented in a way that a reader can immediately follow. The book addresses graduate and undergraduate students in science and engineering, featuring problems with solutions and over 400 illustrations.
A Practical Guide to Handling Laser Diode Beams
Author: Haiyin Sun
Publisher: Springer
ISBN: 9401797838
Category : Science
Languages : en
Pages : 147
Book Description
This book offers the reader a practical guide to the control and characterization of laser diode beams. Laser diodes are the most widely used lasers, accounting for 50% of the global laser market. Correct handling of laser diode beams is the key to the successful use of laser diodes, and this requires an in-depth understanding of their unique properties. Following a short introduction to the working principles of laser diodes, the book describes the basics of laser diode beams and beam propagation, including Zemax modeling of a Gaussian beam propagating through a lens. The core of the book is concerned with laser diode beam manipulations: collimating and focusing, circularization and astigmatism correction, coupling into a single mode optical fiber, diffractive optics and beam shaping, and manipulation of multi transverse mode beams. The final chapter of the book covers beam characterization methods, describing the measurement of spatial and spectral properties, including wavelength and linewidth measurement techniques. The book is a significantly revised and expanded version of the title Laser Diode Beam Basics, Manipulations and Characterizations by the same author. New topics introduced in this volume include: laser diode types and working principles, non-paraxial Gaussian beam, Zemax modeling, numerical analysis of a laser diode beam, spectral property characterization methods, and power and energy characterization techniques. The book approaches the subject in a practical way with mathematical content kept to the minimum level required, making the book a convenient reference for laser diode users.
Publisher: Springer
ISBN: 9401797838
Category : Science
Languages : en
Pages : 147
Book Description
This book offers the reader a practical guide to the control and characterization of laser diode beams. Laser diodes are the most widely used lasers, accounting for 50% of the global laser market. Correct handling of laser diode beams is the key to the successful use of laser diodes, and this requires an in-depth understanding of their unique properties. Following a short introduction to the working principles of laser diodes, the book describes the basics of laser diode beams and beam propagation, including Zemax modeling of a Gaussian beam propagating through a lens. The core of the book is concerned with laser diode beam manipulations: collimating and focusing, circularization and astigmatism correction, coupling into a single mode optical fiber, diffractive optics and beam shaping, and manipulation of multi transverse mode beams. The final chapter of the book covers beam characterization methods, describing the measurement of spatial and spectral properties, including wavelength and linewidth measurement techniques. The book is a significantly revised and expanded version of the title Laser Diode Beam Basics, Manipulations and Characterizations by the same author. New topics introduced in this volume include: laser diode types and working principles, non-paraxial Gaussian beam, Zemax modeling, numerical analysis of a laser diode beam, spectral property characterization methods, and power and energy characterization techniques. The book approaches the subject in a practical way with mathematical content kept to the minimum level required, making the book a convenient reference for laser diode users.