Technology of Gallium Nitride Crystal Growth PDF Download
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Author: Dirk Ehrentraut
Publisher: Springer Science & Business Media
ISBN: 3642048307
Category : Science
Languages : en
Pages : 337
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Book Description
This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.
Author: Dirk Ehrentraut
Publisher: Springer Science & Business Media
ISBN: 3642048307
Category : Science
Languages : en
Pages : 337
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Book Description
This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.
Author: Annaïg Denis
Publisher:
ISBN:
Category :
Languages : en
Pages : 28
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Book Description
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Broad Funding Opportunity Announcement Project: The new GaN crystal growth method is adapted from that used to grow quartz crystals, which are very inexpensive and represent the second-largest market for single crystals for electronic applications (after silicon). More extreme conditions are required to grow GaN crystals and therefore a new type of chemical growth chamber was invented that is suitable for large-scale manufacturing. A new process was developed that grows GaN crystals at a rate that is more than double that of current processes. The new technology will enable GaN substrates with best-in-world quality at lowest-in-world prices, which in turn will enable new generations of white LEDs, lasers for full-color displays, and high-performance power electronics.
Author: Dirk Ehrentraut
Publisher: Springer
ISBN: 9783642048289
Category : Science
Languages : en
Pages : 326
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Book Description
This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.
Author: Huaqiang Wu
Publisher:
ISBN:
Category :
Languages : en
Pages : 380
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Book Description
Author: Siddha Pimputkar
Publisher: LAP Lambert Academic Publishing
ISBN: 9783659566936
Category :
Languages : en
Pages : 236
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Book Description
Gallium Nitride (GaN) is a promising semiconductor with the ability to emit visible light of various wavelengths, most notably in the blue and green. Given the highly efficient manner in which white light can be created using this material, it is bound to replace all other lighting sources due to energy savings and longevity. Furthermore, GaN electronics promise to reduce a significant portion of energy losses due to energy conversion processes, while enabling higher power and temperature operations. Availability of native, large area substrates for higher quality devices is critical, though largely lacking due to the difficulty in growing GaN using bulk, single crystal growth techniques. The ammonothermal method is a promising technique which grows GaN in a supercritical ammonia solution at high temperatures (> 500 C) and pressures (> 1000 atm). Improvements to growth rate are needed to reduce cost, while improvements in purity reduce absorption loses for optical applications. This book details advances for this technique and the improvements resulting from the use of a silver liner within the growth systems for the process.
Author: Nikolai Kolesnikov
Publisher: BoD – Books on Demand
ISBN: 9533076100
Category : Science
Languages : en
Pages : 622
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Book Description
In modern research and development, materials manufacturing crystal growth is known as a way to solve a wide range of technological tasks in the fabrication of materials with preset properties. This book allows a reader to gain insight into selected aspects of the field, including growth of bulk inorganic crystals, preparation of thin films, low-dimensional structures, crystallization of proteins, and other organic compounds.
Author: Elke Meissner
Publisher: Springer Nature
ISBN: 3030563057
Category : Technology & Engineering
Languages : en
Pages : 351
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Book Description
This book provides a collection of contributed chapters, delivering a comprehensive overview of topics related to the synthesis and crystal growth of nitride compounds under supercritical ammonia conditions. Focusing on key chemical and technological aspects of ammonothermal synthesis and growth of functional nitride compounds, the book also describes many innovative techniques for in-situ observation and presents new data fundamental for materials synthesis under ammonothermal conditions. With its detailed coverage of many thermodynamic and kinetics aspects, which are necessary for understanding and controlling crystal growth, this contributed volume is the ideal companion to materials chemists and engineers at any point in their journey in this rich and exciting field.
Author: Peter Capper
Publisher: John Wiley & Sons
ISBN: 0470012072
Category : Technology & Engineering
Languages : en
Pages : 574
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Book Description
A valuable, timely book for the crystal growth community, edited by one of the most respected members in the field. Contents cover all the important materials from silicon through the III-V and II-IV compounds to oxides, nitrides, fluorides, carbides and diamonds International group of contributors from academia and industry provide a balanced treatment Includes global interest with particular relevance to: USA, Canada, UK, France, Germany, Netherlands, Belgium, Italy, Spain, Switzerland, Japan, Korea, Taiwan, China, Australia and South Africa
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 47
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Book Description
In summary, a new process is being developed to obtain free standing, large area, near single crystal quality GaN flake (highly oriented GaN films) promising as native substrates for homoepitaxial growth of device quality, low-defect density GaN layers. However, the experiments to date resulted only in GaN flakes of sizes around 1 sq cm due to the following reasons: (a) the wetting and flow of molten Ga affected the flatness of the Ga film surfaces during the nucleation and coalescence of GaN crystals (b) the flow of Ga through cracks or discontinuities within the films limited the area of highly oriented GaN films. Currently, two types of experiments involving substrate stage rotation and in-Situ Ga delivery are being conducted to overcome the above difficulties. Similarly, MOCVD deposition studies onto GaN flakes are planned for making several mm thick ingots.
