Gallium Arsenide Technology in Europe PDF Download
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Author: Joseph Mun
Publisher: Springer
ISBN:
Category : Computers
Languages : en
Pages : 406
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Book Description
Author: Joseph Mun
Publisher: Springer
ISBN:
Category : Computers
Languages : en
Pages : 406
Get Book Here
Book Description
Author: Joseph Mun
Publisher: Springer
ISBN: 9783642789342
Category : Computers
Languages : en
Pages : 0
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Book Description
Some of the key milestones in GaAs technology were ftrst demonstrated in Europe, for example, the ftrst GaAs Field Effect Transistor (FET) with microwave performance and the ftrst GaAs Microwave Monolithic Integrated Circuit (MMIC). The strategic nature of GaAs technology has attracted heavy investment from many vertically integrated companies in information technology, communication and defence, as well as from semiconductor manufacturers world wide. Europe always faced strong competition from the USA and Japan and until 1984, European GaAs activities were fragmented amongst various players, with some of the activities loosely grouped into national programmes. In 1984, a number of collaborative projects were established under the European Speciftc Programme on Information Technology (ESPRIT) which crossed national boundaries. It has launched a new and exciting phase for GaAs in Europe and few of those involved at the time could have imagined where such collaboration may lead. In the beginning of those early projects, collaboration was approached with caution and suspicion because after all, many members of a newly formed project team were previously competitors. However, common technology problems soon became apparent and the opportunity to discuss these problems with engineers and scientists from different backgrounds had quickly broken down all barriers. Today, collaboration has become an essential element in European R&D. Collaboration has strengthened the GaAs community and helped to accelerate its growth against difftcult times. This book examines the importance of GaAs technology in Europe and illustrates some of the recent activities pursued under various ESPRIT projects.
Author: R. Szweda
Publisher: Elsevier
ISBN: 0080532284
Category : Technology & Engineering
Languages : en
Pages : 429
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Book Description
The third edition of this highly respected market study provides a detailed insight into the global developments of the GaAs industry to 2004, and the implications for both suppliers and users of GaAs technology. The report has been completely revised and updated with a new chapter added on competitive technologies. The report also supplies market analysis by component type and application sectors.For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.
Author:
Publisher:
ISBN:
Category : Gallium arsenide semiconductors
Languages : en
Pages : 506
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Book Description
Author: Frost & Sullivan
Publisher:
ISBN:
Category : Gallium arsenide semiconductors
Languages : en
Pages : 295
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Book Description
Author: Strategic Incorporated
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages :
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Book Description
Author: D. J. Branning
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 248
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Book Description
Author: Omar Wing
Publisher: Springer Science & Business Media
ISBN: 1461315417
Category : Technology & Engineering
Languages : en
Pages : 198
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Book Description
Gallium Arsenide technology has come of age. GaAs integrated circuits are available today as gate arrays with an operating speed in excess of one Gigabits per second. Special purpose GaAs circuits are used in optical fiber digital communications systems for the purpose of regeneration, multiplexing and switching of the optical signals. As advances in fabrication and packaging techniques are made, the operat ing speed will further increase and the cost of production will reach a point where large scale application of GaAs circuits will be economical in these and other systems where speed is paramount. This book is written for students and engineers who wish to enter into this new field of electronics for the first time and who wish to embark on a serious study of the subject of GaAs circuit design. No prior knowledge of GaAs technology is assumed though some previous experience with MOS circuit design will be helpful. A good part of the book is devoted to circuit analysis, to the extent that is possible for non linear circuits. The circuit model of the GaAs transistor is derived from first principles and analytic formulas useful in predicting the approxi mate circuit performance are also derived. Computer simulation is used throughout the book to show the expected performance and to study the effects of parameter variations.
Author: Dave Prochnow
Publisher:
ISBN: 9780071574709
Category :
Languages : en
Pages :
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Book Description
Author: M. R. Brozel
Publisher: Inst of Engineering & Technology
ISBN: 9780852968857
Category : Technology & Engineering
Languages : en
Pages : 981
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Book Description
It was in 1986 that INSPEC (The Information Division of the Institution of Electrical Engineers) published the book Properties of Gallium Arsenide. Since then, major developments have taken place. This third edition is comprised of 150 specially commissioned articles contributed by experts from the USA, Europe and Japan.
