Gallium Arsenide and Related Compounds 1986 PDF Download
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Author: W. T. Lindley
Publisher: Institute of Physics Publishing (GB)
ISBN:
Category : Science
Languages : en
Pages : 620
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Book Description
Author: W. T. Lindley
Publisher: Institute of Physics Publishing (GB)
ISBN:
Category : Science
Languages : en
Pages : 620
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Book Description
Author: Gerald B. Stringfellow
Publisher: CRC Press
ISBN: 100011225X
Category : Science
Languages : en
Pages : 680
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Book Description
Gallium Arsenide and Related Compounds 1991emphasizes current results on the materials, characterization, and device aspects of a broad range of semiconductor materials, particularly the III-V compounds and alloys. The book is a valuable reference for researchers in physics, materials science, and electronics and electrical engineering who work on III-V compounds.
Author: Aris Christou
Publisher: Institute of Physics Publishing (GB)
ISBN:
Category : Science
Languages : en
Pages : 872
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Book Description
Author: Ikegami
Publisher: CRC Press
ISBN: 9780750302500
Category : Technology & Engineering
Languages : en
Pages : 1002
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Book Description
Bringing together international experts from 16 countries, Gallium Arsenide and Related Compounds 1992 focuses on device applications for Gallium Arsenide and related compounds. A topic of importance discussed is the first GaAs supercomputer from Fujitsu. The book also explores carbon doping and device applications in laser diodes, light modulators, and amplifiers, emphasizing business opportunity in consumer applications such as personal communications and TV tuners. It includes an account of the use of scanning tunneling microscopies in GaAs and related compounds. This book is ideal for physicists, materials scientists, and electronics and electrical engineers involved in III-V compound research.
Author:
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 876
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Book Description
Author: Günter Weimann
Publisher: CRC Press
ISBN: 9780750302951
Category : Technology & Engineering
Languages : en
Pages : 880
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Book Description
Gallium Arsenide and Related Compounds 1993 covers III-V compounds from crystal growth of materials to their device applications. Focusing on the fields of optical communications and satellite broadcasting, the book describes the practical applications for GaAs and III-V compounds in devices and circuits, both conventional and those based on quantum effects. It also discusses ultrafast GaAs transistors and integrated circuits, novel laser diodes, and tunneling devices, and considers the direction for future technologies. In addition, this volume addresses the increasing demands of ultra high speed systems that require careful selection of III-V materials to optimize the performance of electronic and optoelectronic components. It is ideal reading for physicists, materials scientists, electrical, and electronics engineers investigating III-V compound materials, properties, and devices.
Author: Manijeh Razeghi
Publisher: CRC Press
ISBN: 1482289385
Category : Science
Languages : en
Pages : 460
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Book Description
The MOCVD Challenge: Volume 2, A Survey of GaInAsP-GaAs for Photonic and Electronic Device Applications focuses on GaAs systems and devices grown by MOCVD, specifically MOCVD growth of GaAs and related alloys and GaInP for photonic and electronic applications. Along with Volume 1, this book provides a personal account of the author's own pioneering
Author:
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 560
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Book Description
Author: I.W. Boyd
Publisher: Elsevier
ISBN: 0444596801
Category : Technology & Engineering
Languages : en
Pages : 552
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Book Description
The contributions in this volume reflect not only the growing understanding of the underlying mechanisms controlling the various reactions in laser surface processing, but also the potential of several developing applications of direct processing. The most notable trend in the field currently is the technique of laser ablation, which is reported in almost a quarter of the papers in this volume. Whilst by no means a new phenomenon, attention has until recent years remained in the area of lithography and UV-sensitive materials. The growth in interest lies in the use of the technique to grow multi-component thin films and multi-layers. A number of papers on the topic of process diagnostics and in-situ measurements are also included. The theme of these annual meetings is centred around the physical and chemical modification of thin films and surfaces induced by the action of photon, ion, neutral, or electron beams in a variety of environments. Consequently these proceedings provide a comprehensive and unified presentation of the latest developments in this field.
Author: Robin F.C. Farrow
Publisher: Elsevier
ISBN: 0815518404
Category : Technology & Engineering
Languages : en
Pages : 795
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Book Description
In this volume, the editor and contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems that are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE has played a key role both in their development and application to devices.
