Fundamentals of Power Semiconductor Devices PDF Download
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Author: B. Jayant Baliga
Publisher: Springer Science & Business Media
ISBN: 0387473149
Category : Technology & Engineering
Languages : en
Pages : 1085
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Book Description
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.
Author: B. Jayant Baliga
Publisher: Springer Science & Business Media
ISBN: 0387473149
Category : Technology & Engineering
Languages : en
Pages : 1085
Get Book Here
Book Description
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.
Author: B. Jayant Baliga
Publisher: Springer
ISBN: 3319939882
Category : Technology & Engineering
Languages : en
Pages : 1114
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Book Description
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.
Author: B. Jayant Baliga
Publisher: Wiley-Interscience
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 504
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Book Description
Written in a tutorial form, the text supplies in-depth the physics, design, and fabrication technology for power devices. Each chapter includes a discussion of the basic concepts of device operation and their electrical characteristics, a detailed analysis of the device physics, and the technology of fabrication. Extensive analytical solutions are used to enable the reader to obtain an understanding of the physics.
Author: Josef Lutz
Publisher:
ISBN: 9783319709185
Category : Electronic book
Languages : en
Pages :
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Book Description
This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. Special peculiarities of devices from the ascending semiconductor materials SiC and GaN are discussed. This book presents significant improvements compared to its first edition. It includes chapters on packaging and reliability. The chapter on semiconductor technology is written in a more in-depth way by considering 2D- and high concentration effects. The chapter on IGBTs is extended by new technologies and evaluation of its potential. An extended theory of cosmic ray failures is presented. The range of certain important physical relationships, doubted in recent papers for use in device simulation, is cleared and substantiated in this second edition.
Author: Robert W. Erickson
Publisher: Springer Nature
ISBN: 3030438813
Category : Technology & Engineering
Languages : en
Pages : 1081
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Book Description
Fundamentals of Power Electronics, Third Edition, is an up-to-date and authoritative text and reference book on power electronics. This new edition retains the original objective and philosophy of focusing on the fundamental principles, models, and technical requirements needed for designing practical power electronic systems while adding a wealth of new material. Improved features of this new edition include: new material on switching loss mechanisms and their modeling; wide bandgap semiconductor devices; a more rigorous treatment of averaging; explanation of the Nyquist stability criterion; incorporation of the Tan and Middlebrook model for current programmed control; a new chapter on digital control of switching converters; major new chapters on advanced techniques of design-oriented analysis including feedback and extra-element theorems; average current control; new material on input filter design; new treatment of averaged switch modeling, simulation, and indirect power; and sampling effects in DCM, CPM, and digital control. Fundamentals of Power Electronics, Third Edition, is intended for use in introductory power electronics courses and related fields for both senior undergraduates and first-year graduate students interested in converter circuits and electronics, control systems, and magnetic and power systems. It will also be an invaluable reference for professionals working in power electronics, power conversion, and analog and digital electronics.
Author: Tanya K. Gachovska
Publisher: Springer Nature
ISBN: 3031024982
Category : Technology & Engineering
Languages : en
Pages : 88
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Book Description
This book presents physics-based models of bipolar power semiconductor devices and their implementation in MATLAB and Simulink. The devices are subdivided into different regions, and the operation in each region, along with the interactions at the interfaces which are analyzed using basic semiconductor physics equations that govern their behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as the junction voltages and the carrier distribution in different regions of the device, can be obtained using the models.
Author: Fei Wang
Publisher: Institution of Engineering and Technology
ISBN: 1785614916
Category : Technology & Engineering
Languages : en
Pages : 348
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Book Description
At the heart of modern power electronics converters are power semiconductor switching devices. The emergence of wide bandgap (WBG) semiconductor devices, including silicon carbide and gallium nitride, promises power electronics converters with higher efficiency, smaller size, lighter weight, and lower cost than converters using the established silicon-based devices. However, WBG devices pose new challenges for converter design and require more careful characterization, in particular due to their fast switching speed and more stringent need for protection.
Author: Tsunenobu Kimoto
Publisher: John Wiley & Sons
ISBN: 1118313526
Category : Technology & Engineering
Languages : en
Pages : 565
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Book Description
A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Author: Vítezslav Benda
Publisher: John Wiley & Sons
ISBN: 9780471976448
Category : Technology & Engineering
Languages : en
Pages : 438
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Book Description
Dieses Buch beschreibt in leicht verständlicher Weise Aufbau, Funktion, Eigenschaften und Anwendungsmöglichkeiten wichtiger Halbleiter-Bauelemente - von Leistungsdioden über Thyristoren und MOSFETs bis hin zu integrierten Systemen. Die Autoren verzichten dabei auf komplizierte Mathematik; sie stützen sich vielmehr auf grundlegende physikalische Modelle. (11/98)
Author: D. Nirmal
Publisher: CRC Press
ISBN: 1000475360
Category : Technology & Engineering
Languages : en
Pages : 314
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Book Description
This book covers the fundamentals and significance of 2-D materials and related semiconductor transistor technologies for the next-generation ultra low power applications. It provides comprehensive coverage on advanced low power transistors such as NCFETs, FinFETs, TFETs, and flexible transistors for future ultra low power applications owing to their better subthreshold swing and scalability. In addition, the text examines the use of field-effect transistors for biosensing applications and covers design considerations and compact modeling of advanced low power transistors such as NCFETs, FinFETs, and TFETs. TCAD simulation examples are also provided. FEATURES Discusses the latest updates in the field of ultra low power semiconductor transistors Provides both experimental and analytical solutions for TFETs and NCFETs Presents synthesis and fabrication processes for FinFETs Reviews details on 2-D materials and 2-D transistors Explores the application of FETs for biosensing in the healthcare field This book is aimed at researchers, professionals, and graduate students in electrical engineering, electronics and communication engineering, electron devices, nanoelectronics and nanotechnology, microelectronics, and solid-state circuits.
