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Author: Mark S Lundstrom
Publisher: World Scientific Publishing Company
ISBN: 981457175X
Category : Technology & Engineering
Languages : en
Pages : 389
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Book Description
The transistor is the key enabler of modern electronics. Progress in transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to device physics are less and less suitable. These lectures describe a way of understanding MOSFETs and other transistors that is much more suitable than traditional approaches when the critical dimensions are measured in nanometers. It uses a novel, “bottom-up approach” that agrees with traditional methods when devices are large, but that also works for nano-devices. Surprisingly, the final result looks much like the traditional, textbook, transistor models, but the parameters in the equations have simple, clear interpretations at the nanoscale. The objective is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits.
Author: Mark S Lundstrom
Publisher: World Scientific Publishing Company
ISBN: 981457175X
Category : Technology & Engineering
Languages : en
Pages : 389
Get Book Here
Book Description
The transistor is the key enabler of modern electronics. Progress in transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to device physics are less and less suitable. These lectures describe a way of understanding MOSFETs and other transistors that is much more suitable than traditional approaches when the critical dimensions are measured in nanometers. It uses a novel, “bottom-up approach” that agrees with traditional methods when devices are large, but that also works for nano-devices. Surprisingly, the final result looks much like the traditional, textbook, transistor models, but the parameters in the equations have simple, clear interpretations at the nanoscale. The objective is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits.
Author: Mark Lundstrom
Publisher: World Scientific Publishing Company Incorporated
ISBN: 9789814571722
Category : Technology & Engineering
Languages : en
Pages : 342
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Book Description
The transistor is the key enabler of modern electronics. Progress in transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to device physics are less and less suitable. These lectures describe a way of understanding MOSFETs and other transistors that is much more suitable than traditional approaches when the critical dimensions are measured in nanometers. It uses a novel, "bottom-up approach" that agrees with traditional methods when devices are large, but that also works for nano-devices. Surprisingly, the final result looks much like the traditional, textbook, transistor models, but the parameters in the equations have simple, clear interpretations at the nanoscale. The objective is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits.
Author: Mark S Lundstrom
Publisher: World Scientific Publishing Company
ISBN: 9814452246
Category : Science
Languages : en
Pages : 250
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Book Description
These lectures are designed to introduce students to the fundamentals of carrier transport in nano-devices using a novel, “bottom up approach” that agrees with traditional methods when devices are large, but which also works for nano-devices. The goal is to help students learn how to think about carrier transport at the nanoscale and also how the bottom up approach provides a new perspective to traditional concepts like mobility and drift-diffusion equations. The lectures are designed for engineers and scientists and others who need a working knowledge of near-equilibrium (“low-field” or “linear”) transport. Applications of the theory and measurement considerations are also addressed. The lectures serve as a starting point to an extensive set of instructional materials available online.
Author: Mark S Lundstrom
Publisher: World Scientific
ISBN: 9811267286
Category : Technology & Engineering
Languages : en
Pages : 278
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Book Description
Current leading-edge CMOS transistors are about as small as they will get. We now have a simple, clear, very physical understanding of how these devices function, but it has not yet entered our textbooks. Besides, CMOS logic transistors, power transistors are increasingly important as are III-V heterostructure transistors for high-frequency communication. Transistor reliability is also important but rarely treated in introductory textbooks.As we begin a new era, in which making transistors smaller will no longer be a major driving force for progress, it is time to look back at what we have learned in transistor research. Today we see a need to convey as simply and clearly as possible the essential physics of the device that makes modern electronics possible. That is the goal of these lectures. This volume rearranges the familiar topics and distills the most essential among them, while adding most recent approaches which have become crucial to the discussion. To follow the lectures, readers need only a basic understanding of semiconductor physics. Familiarity with transistors and electronic circuits is helpful, but not assumed.Related Link(s)
Author: Thangaprakash Sengodan
Publisher: Springer Nature
ISBN: 9811555583
Category : Computers
Languages : en
Pages : 1399
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Book Description
The book comprises select proceedings of the first International Conference on Advances in Electrical and Computer Technologies 2019 (ICAECT 2019). The papers presented in this book are peer reviewed and cover wide range of topics in Electrical and Computer Engineering fields. This book contains the papers presenting the latest developments in the areas of Electrical, Electronics, Communication systems and Computer Science such as smart grids, soft computing techniques in power systems, smart energy management systems, power electronics, feedback control systems, biomedical engineering, geo informative systems, grid computing, data mining, image and signal processing, video processing, computer vision, pattern recognition, cloud computing, pervasive computing, intelligent systems, artificial intelligence, neural network and fuzzy logic, broad band communication, mobile and optical communication, network security, VLSI, embedded systems, optical networks and wireless communication. This book will be of great use to the researchers and students in the areas of Electrical and Electronics Engineering, Communication systems and Computer Science.
Author: Ram K. Gupta
Publisher: CRC Press
ISBN: 1040040926
Category : Technology & Engineering
Languages : en
Pages : 396
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Book Description
This book provides readers with state-of-the-art knowledge of established and emerging semiconducting materials, their processing, and the fabrication of chips and microprocessors. In addition to covering the fundamentals of these materials, it details the basics and workings of many semiconducting devices and their role in modern electronics and explores emerging semiconductors and their importance in future devices. • Provides readers with latest advances in semiconductors. • Covers diodes, transistors, and other devices using semiconducting materials. • Covers advances and challenges in semiconductors and their technological applications. • Discusses fundamentals and characteristics of emerging semiconductors for chip manufacturing. This book provides directions to scientists, engineers, and researchers in materials engineering and related disciplines to help them better understand the physics, characteristics, and applications of modern semiconductors.
Author: Munir H. Nayfeh
Publisher: Elsevier
ISBN: 0323480586
Category : Science
Languages : en
Pages : 604
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Book Description
Fundamentals and Applications of Nano Silicon in Plasmonics and Fullerines: Current and Future Trends addresses current and future trends in the application and commercialization of nanosilicon. The book presents current, innovative and prospective applications and products based on nanosilicon and their binary system in the fields of energy harvesting and storage, lighting (solar cells and nano-capacitor and fuel cell devices and nanoLEDs), electronics (nanotransistors and nanomemory, quantum computing, photodetectors for space applications; biomedicine (substance detection, plasmonic treatment of disease, skin and hair care, implantable glucose sensor, capsules for drug delivery and underground water and oil exploration), and art (glass and pottery). Moreover, the book includes material on the use of advanced laser and proximal probes for imaging and manipulation of nanoparticles and atoms. In addition, coverage is given to carbon and how it contrasts and integrates with silicon with additional related applications. This is a valuable resource to all those seeking to learn more about the commercialization of nanosilicon, and to researchers wanting to learn more about emerging nanosilicon applications. - Features a variety of designs and operation of nano-devices, helping engineers to make the best use of nanosilicon - Contains underlying principles of how nanomaterials work and the variety of applications they provide, giving those new to nanosilicon a fundamental understanding - Assesses the viability of various nanoslicon devices for mass production and commercialization, thereby providing an important source of information for engineers
Author: Yuxiang Tu
Publisher: BoD – Books on Demand
ISBN: 0854666478
Category : Technology & Engineering
Languages : en
Pages : 118
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Book Description
This book covers a wide range of the latest innovations in MOSFETs, including discussions of developments in various important mainstream MOSFETs. It covers modeling and property studies in MOSFET fields, including the compact model of the DMG-GC-DOTTDCD cylindrical gate MOSFET and the electrophysical properties of nanofilms generated using the magnetron sputtering method. The innovative analytical potential, charge, and current distributions in junctionless MOSFETs are conducted, and the related differences between accurate and simplified models are discussed in detail. Nanoscale devices design multiple solutions are also presented. The book scope reflects the most recent MOSFET developments, applications, and trends, which open up new horizons and present a perfect reference source for people working in MOSFET fields. This book is also meaningful in engineering fields, especially in electronics engineering, which includes radio frequency, microwave, electronics systems networks, 5G, 6G, and so on.
Author: Sorin Cristoloveanu
Publisher: Elsevier
ISBN: 0128231653
Category : Technology & Engineering
Languages : en
Pages : 386
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Book Description
Fully Depleted Silicon-On-Insulator provides an in-depth presentation of the fundamental and pragmatic concepts of this increasingly important technology. There are two main technologies in the marketplace of advanced CMOS circuits: FinFETs and fully depleted silicon-on-insulators (FD-SOI). The latter is unchallenged in the field of low-power, high-frequency, and Internet-of-Things (IOT) circuits. The topic is very timely at research and development levels. Compared to existing books on SOI materials and devices, this book covers exhaustively the FD-SOI domain. Fully Depleted Silicon-On-Insulator is based on the expertise of one of the most eminent individuals in the community, Dr. Sorin Cristoloveanu, an IEEE Andrew Grove 2017 award recipient "For contributions to silicon-on-insulator technology and thin body devices." In the book, he shares key insights on the technological aspects, operation mechanisms, characterization techniques, and most promising emerging applications. Early praise for Fully Depleted Silicon-On-Insulator "It is an excellent written guide for everyone who would like to study SOI deeply, specially focusing on FD-SOI." --Dr. Katsu Izumi, Formerly at NTT Laboratories and then at Osaka Prefecture University, Japan "FDSOI technology is poised to catch an increasingly large portion of the semiconductor market. This book fits perfectly in this new paradigm [...] It covers many SOI topics which have never been described in a book before." --Professor Jean-Pierre Colinge, Formerly at TSMC and then at CEA-LETI, Grenoble, France "This book, written by one of the true experts and pioneers in the silicon-on-insulator field, is extremely timely because of the growing footprint of FD-SOI in modern silicon technology, especially in IoT applications. Written in a delightfully informal style yet comprehensive in its coverage, the book describes both the device physics underpinning FD-SOI technology and the cutting-edge, perhaps even futuristic devices enabled by it." --Professor Alexander Zaslavsky, Brown University, USA "A superbly written book on SOI technology by a master in the field." --Professor Yuan Taur, University of California, San Diego, USA "The author is a world-top researcher of SOI device/process technology. This book is his masterpiece and important for the FD-SOI archive. The reader will learn much from the book." --Professor Hiroshi Iwai, National Yang Ming Chiao Tung University, Taiwan From the author "It is during our global war against the terrifying coalition of corona and insidious computer viruses that this book has been put together. Continuous enlightenment from FD-SOI helped me cross this black and gray period. I shared a lot of myself in this book. The rule of the game was to keep the text light despite the heavy technical content. There are even tentative FD-SOI hieroglyphs on the front cover, composed of curves discussed in the book." - Written by a top expert in the silicon-on-insulator community and IEEE Andrew Grove 2017 award recipient - Comprehensively addresses the technology aspects, operation mechanisms and electrical characterization techniques for FD-SOI devices - Discusses FD-SOI's most promising device structures for memory, sensing and emerging applications
Author: Avik Ghosh
Publisher: World Scientific
ISBN: 9811265976
Category : Science
Languages : en
Pages : 349
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Book Description
The Romans built enduring bridges well before Newton came along, armed simply with a working knowledge of mechanics and materials. In contrast, today's bridge building is an elaborate enterprise involving CAD tools, composite materials and acoustic imaging. When technology is pushed to its limits, a working knowledge proves inadequate, and an in-depth understanding of core physical principles, both macroscopic and microscopic, top-down vs bottom-up, becomes essential.We find ourselves today at a similar crossroad in semiconductor device technology, where a working knowledge of solid state electronics is no longer enough. Faced with the prohibitive cost of computing and the slowdown of chip manufacturing, device scaling and the global supply chain, the semiconductor industry is forced to explore alternate platforms such as 2-D materials, spintronics, analog processing and quantum engineering.This book combines top-down classical device physics with bottom-up quantum transport in a single venue to provide the basis for such a scientific exploration. It is essential, easy reading for beginning undergraduate and practicing graduate students, physicists unfamiliar with device engineering and engineers untrained in quantum physics. With just a modest pre-requisite of freshman maths, the book works quickly through key concepts in quantum physics, Matlab exercises and original homeworks, to cover a wide range of topics from chemical bonding to Hofstader butterflies, domain walls to Chern insulators, solar cells to photodiodes, FinFETs to Majorana fermions. For the practicing device engineer, it provides new concepts such as the quantum of resistance, while for the practicing quantum physicist, it provides new contexts such as the tunnel transistor.
