Fundamentals of Modern VLSI Devices PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Fundamentals of Modern VLSI Devices PDF full book. Access full book title Fundamentals of Modern VLSI Devices by Yuan Taur. Download full books in PDF and EPUB format.
Author: Yuan Taur
Publisher: Cambridge University Press
ISBN: 9781107635715
Category : Technology & Engineering
Languages : en
Pages : 0
Get Book
Book Description
Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.
Author: Yuan Taur
Publisher: Cambridge University Press
ISBN: 9781107635715
Category : Technology & Engineering
Languages : en
Pages : 0
Get Book
Book Description
Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.
Author: Yuan Taur
Publisher: Cambridge University Press
ISBN: 9780521832946
Category : Technology & Engineering
Languages : en
Pages : 680
Get Book
Book Description
Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.
Author: Yuan Taur
Publisher: Cambridge University Press
ISBN: 110739399X
Category : Technology & Engineering
Languages : en
Pages : 895
Get Book
Book Description
Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.
Author: Chenming Hu
Publisher: Prentice Hall
ISBN: 0136085253
Category : Integrated circuits
Languages : en
Pages : 387
Get Book
Book Description
Modern Semiconductor Devices for Integrated Circuits, First Edition introduces readers to the world of modern semiconductor devices with an emphasis on integrated circuit applications. KEY TOPICS Electrons and Holes in Semiconductors; Motion and Recombination of Electrons and Holes; Device Fabrication Technology; PN and Metal Semiconductor Junctions; MOS Capacitor; MOS Transistor; MOSFETs in ICs Scaling, Leakage, and Other Topics; Bipolar Transistor. MARKET Written by an experienced teacher, researcher, and expert in industry practices, this succinct and forward-looking text is appropriate for anyone interested in semiconductor devices for integrated curcuits, and serves as a suitable reference text for practicing engineers. "
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 34
Get Book
Book Description
Author: Thomas Dillinger
Publisher: Prentice Hall
ISBN: 0135657687
Category : Technology & Engineering
Languages : en
Pages : 855
Get Book
Book Description
The Complete, Modern Tutorial on Practical VLSI Chip Design, Validation, and Analysis As microelectronics engineers design complex chips using existing circuit libraries, they must ensure correct logical, physical, and electrical properties, and prepare for reliable foundry fabrication. VLSI Design Methodology Development focuses on the design and analysis steps needed to perform these tasks and successfully complete a modern chip design. Microprocessor design authority Tom Dillinger carefully introduces core concepts, and then guides engineers through modeling, functional design validation, design implementation, electrical analysis, and release to manufacturing. Writing from the engineer’s perspective, he covers underlying EDA tool algorithms, flows, criteria for assessing project status, and key tradeoffs and interdependencies. This fresh and accessible tutorial will be valuable to all VLSI system designers, senior undergraduate or graduate students of microelectronics design, and companies offering internal courses for engineers at all levels. Reflect complexity, cost, resources, and schedules in planning a chip design project Perform hierarchical design decomposition, floorplanning, and physical integration, addressing DFT, DFM, and DFY requirements Model functionality and behavior, validate designs, and verify formal equivalency Apply EDA tools for logic synthesis, placement, and routing Analyze timing, noise, power, and electrical issues Prepare for manufacturing release and bring-up, from mastering ECOs to qualification This guide is for all VLSI system designers, senior undergraduate or graduate students of microelectronics design, and companies offering internal courses for engineers at all levels. It is applicable to engineering teams undertaking new projects and migrating existing designs to new technologies.
Author: Jia-ming Liu
Publisher: Cambridge University Press
ISBN: 9781139441148
Category : Technology & Engineering
Languages : en
Pages : 1108
Get Book
Book Description
Photonic devices lie at the heart of the communications revolution, and have become a large and important part of the electronic engineering field, so much so that many colleges now treat this as a subject in its own right. With this in mind, the author has put together a unique textbook covering every major photonic device, and striking a careful balance between theoretical and practical concepts. The book assumes a basic knowledge of optics, semiconductors and electromagnetic waves. Many of the key background concepts are reviewed in the first chapter. Devices covered include optical fibers, couplers, electro-optic devices, magneto-optic devices, lasers and photodetectors. Problems are included at the end of each chapter and a solutions set is available. The book is ideal for senior undergraduate and graduate courses, but being device driven it is also an excellent engineers' reference.
Author: Olof Engström
Publisher: Cambridge University Press
ISBN: 1107005930
Category : Science
Languages : en
Pages : 369
Get Book
Book Description
A detailed, up-to-date guide to modern MOS structures, describing key tools, cutting-edge models, novel phenomena and challenges for future development. Abstract concepts are supported by practical examples and presented alongside recent theoretical and experimental results. An ideal companion for researchers, graduate students and industrial development engineers.
Author: Simon M. Sze
Publisher: John Wiley & Sons
ISBN: 1119429110
Category : Technology & Engineering
Languages : en
Pages : 944
Get Book
Book Description
The new edition of the most detailed and comprehensive single-volume reference on major semiconductor devices The Fourth Edition of Physics of Semiconductor Devices remains the standard reference work on the fundamental physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. This fully updated and expanded edition includes approximately 1,000 references to original research papers and review articles, more than 650 high-quality technical illustrations, and over two dozen tables of material parameters. Divided into five parts, the text first provides a summary of semiconductor properties, covering energy band, carrier concentration, and transport properties. The second part surveys the basic building blocks of semiconductor devices, including p-n junctions, metal-semiconductor contacts, and metal-insulator-semiconductor (MIS) capacitors. Part III examines bipolar transistors, MOSFETs (MOS field-effect transistors), and other field-effect transistors such as JFETs (junction field-effect-transistors) and MESFETs (metal-semiconductor field-effect transistors). Part IV focuses on negative-resistance and power devices. The book concludes with coverage of photonic devices and sensors, including light-emitting diodes (LEDs), solar cells, and various photodetectors and semiconductor sensors. This classic volume, the standard textbook and reference in the field of semiconductor devices: Provides the practical foundation necessary for understanding the devices currently in use and evaluating the performance and limitations of future devices Offers completely updated and revised information that reflects advances in device concepts, performance, and application Features discussions of topics of contemporary interest, such as applications of photonic devices that convert optical energy to electric energy Includes numerous problem sets, real-world examples, tables, figures, and illustrations; several useful appendices; and a detailed solutions manual for Instructor's only Explores new work on leading-edge technologies such as MODFETs, resonant-tunneling diodes, quantum-cascade lasers, single-electron transistors, real-space-transfer devices, and MOS-controlled thyristors Physics of Semiconductor Devices, Fourth Edition is an indispensable resource for design engineers, research scientists, industrial and electronics engineering managers, and graduate students in the field.
Author: Kevin F. Brennan
Publisher: Cambridge University Press
ISBN: 9780521596626
Category : Science
Languages : en
Pages : 784
Get Book
Book Description
Modern fabrication techniques have made it possible to produce semiconductor devices whose dimensions are so small that quantum mechanical effects dominate their behavior. This book describes the key elements of quantum mechanics, statistical mechanics, and solid-state physics that are necessary in understanding these modern semiconductor devices. The author begins with a review of elementary quantum mechanics, and then describes more advanced topics, such as multiple quantum wells. He then disusses equilibrium and nonequilibrium statistical mechanics. Following this introduction, he provides a thorough treatment of solid-state physics, covering electron motion in periodic potentials, electron-phonon interaction, and recombination processes. The final four chapters deal exclusively with real devices, such as semiconductor lasers, photodiodes, flat panel displays, and MOSFETs. The book contains many homework exercises and is suitable as a textbook for electrical engineering, materials science, or physics students taking courses in solid-state device physics. It will also be a valuable reference for practising engineers in optoelectronics and related areas.
