Fundamentals of III-V Semiconductor MOSFETs PDF Download
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Author: Serge Oktyabrsky
Publisher: Springer Science & Business Media
ISBN: 1441915478
Category : Technology & Engineering
Languages : en
Pages : 451
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Book Description
Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Author: Serge Oktyabrsky
Publisher: Springer Science & Business Media
ISBN: 1441915478
Category : Technology & Engineering
Languages : en
Pages : 451
Get Book Here
Book Description
Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Author: D. Nirmal
Publisher: CRC Press
ISBN: 0429862520
Category : Science
Languages : en
Pages : 434
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Book Description
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Author: Sneh Saurabh
Publisher: CRC Press
ISBN: 1315350262
Category : Science
Languages : en
Pages : 216
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Book Description
During the last decade, there has been a great deal of interest in TFETs. To the best authors’ knowledge, no book on TFETs currently exists. The proposed book provides readers with fundamental understanding of the TFETs. It explains the interesting characteristics of the TFETs, pointing to their strengths and weaknesses, and describes the novel techniques that can be employed to overcome these weaknesses and improve their characteristics. Different tradeoffs that can be made in designing TFETs have also been highlighted. Further, the book provides simulation example files of TFETs that could be run using a commercial device simulator.
Author: Keh Yung Cheng
Publisher: Springer Nature
ISBN: 3030519031
Category : Technology & Engineering
Languages : en
Pages : 540
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Book Description
This textbook gives a complete and fundamental introduction to the properties of III-V compound semiconductor devices, highlighting the theoretical and practical aspects of their device physics. Beginning with an introduction to the basics of semiconductor physics, it presents an overview of the physics and preparation of compound semiconductor materials, as well as a detailed look at the electrical and optical properties of compound semiconductor heterostructures. The book concludes with chapters dedicated to a number of heterostructure electronic and photonic devices, including the high-electron-mobility transistor, the heterojunction bipolar transistor, lasers, unipolar photonic devices, and integrated optoelectronic devices. Featuring chapter-end problems, suggested references for further reading, as well as clear, didactic schematics accompanied by six information-rich appendices, this textbook is ideal for graduate students in the areas of semiconductor physics or electrical engineering. In addition, up-to-date results from published research make this textbook especially well-suited as a self-study and reference guide for engineers and researchers in related industries.
Author: Sorin Cristoloveanu
Publisher: World Scientific
ISBN: 9814656925
Category : Technology & Engineering
Languages : en
Pages : 186
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Book Description
This book brings together 11 invited papers from the Workshop on Frontiers in Electronics (WOFE) 2013 that took place at San Juan, Puerto Rico, in December 2013. These articles present the ground-breaking works by world leading experts from CMOS and SOI, to wide-bandgap semiconductor technology, terahertz technology, and bioelectronics.WOFE is a bi-annual gathering of leading researchers from around the world, across multiple disciplines, to share their results and discuss key issues in the future development of microelectronics, photonics, and nanoelectronics.The focus of this volume includes topics ranging from advanced transistors: TFT, FinFET, TFET, HEMT to Nitride devices, as well as emerging technologies, devices and materials.This book will be a useful reference for scientists, engineers, researchers, and inventors looking for the future research and development direction of microelectronics, and the trends and technology underpinning these developments.
Author: Elena V. Levchenko
Publisher: Springer Nature
ISBN: 3030377903
Category : Technology & Engineering
Languages : en
Pages : 292
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Book Description
This book provides a unique and comprehensive overview of the latest advances, challenges and accomplishments in the rapidly growing field of theoretical and computational materials science. Today, an increasing number of industrial communities rely more and more on advanced atomic-scale methods to obtain reliable predictions of materials properties, complement qualitative experimental analyses and circumvent experimental difficulties. The book examines some of the latest and most advanced simulation techniques currently available, as well as up-to-date theoretical approaches adopted by a selected panel of twelve international research teams. It covers a wide range of novel and advanced materials, exploring their structural, elastic, optical, mass and electronic transport properties. The cutting-edge techniques presented appeal to physicists, applied mathematicians and engineers interested in advanced simulation methods in materials science. The book can also be used as additional literature for undergraduate and postgraduate students with majors in physics, chemistry, applied mathematics and engineering.
Author: Leonard W. T. Ng
Publisher: Springer
ISBN: 331991572X
Category : Technology & Engineering
Languages : en
Pages : 226
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Book Description
This book discusses the functional ink systems of graphene and related two-dimensional (2D) layered materials in the context of their formulation and potential for various applications, including in electronics, optoelectronics, energy, sensing, and composites using conventional graphics and 3D printing technologies. The authors explore the economic landscape of 2D materials and introduce readers to fundamental properties and production technologies. They also discuss major graphics printing technologies and conventional commercial printing processes that can be used for printing 2D material inks, as well as their specific strengths and weaknesses as manufacturing platforms. Special attention is also paid to scalable production methods for ink formulation, making this an ideal book for students and researchers in academia or industry, who work with functional graphene and other 2D material ink systems and their applications. Explains the state-of-the-art 2D material production technologies that can be manufactured at the industrial scale for functional ink formulation; Provides starting formulation examples of 2D material, functional inks for specific printing methods and their characterization techniques; Reviews existing demonstrations of applications related to printed 2D materials and provides possible future development directions while highlighting current knowledge gaps; Gives a snapshot and forecast of the commercial market for printed GRMs based on the current state of technologies and existing patents.
Author: Sharma, Manoj
Publisher: IGI Global
ISBN: 1522501916
Category : Technology & Engineering
Languages : en
Pages : 423
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Book Description
Very Large Scale Integration (VLSI) Systems refer to the latest development in computer microchips which are created by integrating hundreds of thousands of transistors into one chip. Emerging research in this area has the potential to uncover further applications for VSLI technologies in addition to system advancements. Design and Modeling of Low Power VLSI Systems analyzes various traditional and modern low power techniques for integrated circuit design in addition to the limiting factors of existing techniques and methods for optimization. Through a research-based discussion of the technicalities involved in the VLSI hardware development process cycle, this book is a useful resource for researchers, engineers, and graduate-level students in computer science and engineering.
Author: Mark S Lundstrom
Publisher: World Scientific Publishing Company
ISBN: 981457175X
Category : Technology & Engineering
Languages : en
Pages : 389
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Book Description
The transistor is the key enabler of modern electronics. Progress in transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to device physics are less and less suitable. These lectures describe a way of understanding MOSFETs and other transistors that is much more suitable than traditional approaches when the critical dimensions are measured in nanometers. It uses a novel, “bottom-up approach” that agrees with traditional methods when devices are large, but that also works for nano-devices. Surprisingly, the final result looks much like the traditional, textbook, transistor models, but the parameters in the equations have simple, clear interpretations at the nanoscale. The objective is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits.
Author: S. C. Singh
Publisher: John Wiley & Sons
ISBN: 3527646841
Category : Technology & Engineering
Languages : en
Pages : 793
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Book Description
The first in-depth treatment of the synthesis, processing, and characterization of nanomaterials using lasers, ranging from fundamentals to the latest research results, this handy reference is divided into two main sections. After introducing the concepts of lasers, nanomaterials, nanoarchitectures and laser-material interactions in the first three chapters, the book goes on to discuss the synthesis of various nanomaterials in vacuum, gas and liquids. The second half discusses various nanomaterial characterization techniques involving lasers, from Raman and photoluminescence spectroscopies to light dynamic scattering, laser spectroscopy and such unusual techniques as laser photo acoustic, fluorescence correlation spectroscopy, ultrafast dynamics and laser-induced thermal pulses. The specialist authors adopt a practical approach throughout, with an emphasis on experiments, set-up, and results. Each chapter begins with an introduction and is uniform in covering the basic approaches, experimental setups, and dependencies of the particular method on different parameters, providing sufficient theory and modeling to understand the principles behind the techniques.
