Full-band Monte Carlo Simulation of Electrons and Holes in Strained Si and SiGe PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Full-band Monte Carlo Simulation of Electrons and Holes in Strained Si and SiGe PDF full book. Access full book title Full-band Monte Carlo Simulation of Electrons and Holes in Strained Si and SiGe by Fabian M. Bufler. Download full books in PDF and EPUB format.
Author: Fabian M. Bufler
Publisher: Herbert Utz Verlag
ISBN: 9783896752703
Category : Electron transport
Languages : en
Pages : 196
Get Book Here
Book Description
Author: Fabian M. Bufler
Publisher: Herbert Utz Verlag
ISBN: 9783896752703
Category : Electron transport
Languages : en
Pages : 196
Get Book Here
Book Description
Author: Christoph Jungemann
Publisher: Springer Science & Business Media
ISBN: 3709160863
Category : Technology & Engineering
Languages : en
Pages : 278
Get Book Here
Book Description
This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo method for SiGe and discusses the common theoretical background of the drift-diffusion, hydrodynamic and Monte-Carlo models and their synergy.
Author: Dimitris Tsoukalas
Publisher: Springer Science & Business Media
ISBN: 3709162440
Category : Technology & Engineering
Languages : en
Pages : 463
Get Book Here
Book Description
This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5–7, 2001, in Athens. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.
Author: Sung-Min Hong
Publisher: Springer Science & Business Media
ISBN: 3709107784
Category : Technology & Engineering
Languages : en
Pages : 235
Get Book Here
Book Description
The book covers all aspects from the expansion of the Boltzmann transport equation with harmonic functions to application to devices, where transport in the bulk and in inversion layers is considered. The important aspects of stabilization and band structure mapping are discussed in detail. This is done not only for the full band structure of the 3D k-space, but also for the warped band structure of the quasi 2D hole gas. Efficient methods for building the Schrödinger equation for arbitrary surface or strain directions, gridding of the 2D k-space and solving it together with the other two equations are presented.
Author: Dragica Vasileska
Publisher: CRC Press
ISBN: 1420064843
Category : Technology & Engineering
Languages : en
Pages : 783
Get Book Here
Book Description
Starting with the simplest semiclassical approaches and ending with the description of complex fully quantum-mechanical methods for quantum transport analysis of state-of-the-art devices, Computational Electronics: Semiclassical and Quantum Device Modeling and Simulation provides a comprehensive overview of the essential techniques and methods for effectively analyzing transport in semiconductor devices. With the transistor reaching its limits and new device designs and paradigms of operation being explored, this timely resource delivers the simulation methods needed to properly model state-of-the-art nanoscale devices. The first part examines semiclassical transport methods, including drift-diffusion, hydrodynamic, and Monte Carlo methods for solving the Boltzmann transport equation. Details regarding numerical implementation and sample codes are provided as templates for sophisticated simulation software. The second part introduces the density gradient method, quantum hydrodynamics, and the concept of effective potentials used to account for quantum-mechanical space quantization effects in particle-based simulators. Highlighting the need for quantum transport approaches, it describes various quantum effects that appear in current and future devices being mass-produced or fabricated as a proof of concept. In this context, it introduces the concept of effective potential used to approximately include quantum-mechanical space-quantization effects within the semiclassical particle-based device simulation scheme. Addressing the practical aspects of computational electronics, this authoritative resource concludes by addressing some of the open questions related to quantum transport not covered in most books. Complete with self-study problems and numerous examples throughout, this book supplies readers with the practical understanding required to create their own simulators.
Author: Electrochemical Society. Meeting
Publisher: The Electrochemical Society
ISBN: 9781566773751
Category : Science
Languages : en
Pages : 538
Get Book Here
Book Description
Author: François Triozon
Publisher: John Wiley & Sons
ISBN: 111876188X
Category : Technology & Engineering
Languages : en
Pages : 341
Get Book Here
Book Description
Linear current-voltage pattern, has been and continues to be the basis for characterizing, evaluating performance, and designing integrated circuits, but is shown not to hold its supremacy as channel lengths are being scaled down. In a nanoscale circuit with reduced dimensionality in one or more of the three Cartesian directions, quantum effects transform the carrier statistics. In the high electric field, the collision free ballistic transform is predicted, while in low electric field the transport remains predominantly scattering-limited. In a micro/nano-circuit, even a low logic voltage of 1 V is above the critical voltage triggering nonohmic behavior that results in ballistic current saturation. A quantum emission may lower this ballistic velocity.
Author: Electrochemical Society. Meeting
Publisher: The Electrochemical Society
ISBN: 9781566773768
Category : Technology & Engineering
Languages : en
Pages : 620
Get Book Here
Book Description
Author: Kristin De Meyer
Publisher: Springer Science & Business Media
ISBN:
Category : Computers
Languages : en
Pages : 432
Get Book Here
Book Description
This volume contains the proceedings of the 1998 International Conference on Simulation of Semiconductor Processes and Devices and provides an open forum for the presentation of the latest results and trends in modeling and simulation of semiconductor equipment, processes and devices. Topics include: • semiconductor equipment simulation • process modeling and simulation • device modeling and simulation of complex structures • interconnect modeling • integrated systems for process, device, circuit simulation and optimisation • numerical methods and algorithms • compact modeling and parameter extraction • modeling for RF applications • simulation and modeling of new devices (heterojunction based, SET’s, quantum effect devices, laser based ...)
Author: Vassil Palankovski
Publisher: Springer Science & Business Media
ISBN: 3709105609
Category : Technology & Engineering
Languages : en
Pages : 309
Get Book Here
Book Description
The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.
