Ferroelectricity in Doped Hafnium Oxide PDF Download
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Author: Uwe Schroeder
Publisher: Woodhead Publishing
ISBN: 0081024312
Category : Technology & Engineering
Languages : en
Pages : 572
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Book Description
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. - Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices - Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more - Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face
Author: Uwe Schroeder
Publisher: Woodhead Publishing
ISBN: 0081024312
Category : Technology & Engineering
Languages : en
Pages : 572
Get Book Here
Book Description
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. - Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices - Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more - Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face
Author: Tony Schenk
Publisher: BoD – Books on Demand
ISBN: 3743127296
Category : Technology & Engineering
Languages : en
Pages : 194
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Book Description
In 2011, Böscke et al. reported the unexpected discovery of ferroelectric properties in hafnia based thin films, which has since initiated many further studies and revitalized research on the topic of ferroelectric memories. In spite of many efforts, the unveiling of the fundamentals behind this surprising discovery has proven rather challenging. In this work, the originally claimed Pca21 phase is experimentally proven to be the root of the ferroelectric properties and the nature of this ferroelectricity is classified in the frame of existing concepts of ferroelectric materials. Parameters to stabilize this polar phase are examined from a theoretical and fabrication point of view. With these very basic questions addressed, the application relevant electric field cycling behavior is studied. The results of first-order reversal curves, impedance spectroscopy, scanning transmission electron microscopy and piezoresponse force microscopy significantly advance the understanding of structural mechanisms underlying wake-up, fatigue and the novel phenomenon of split-up/merging of transient current peaks. The impact of field cycling behavior on applications like ferroelectric memories is highlighted and routes to optimize it are derived. These findings help to pave the road for a successful commercialization of hafnia based ferroelectrics.
Author: M. E. Lines
Publisher: Oxford University Press
ISBN: 9780198507789
Category : Science
Languages : en
Pages : 700
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Book Description
This is a standard work on ferroelectrics.
Author: Masanori Okuyama
Publisher: Springer Science & Business Media
ISBN: 9783540241638
Category : Computers
Languages : en
Pages : 272
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Book Description
Ferroelectric thin films continue to attract much attention due to their developing applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. The contributing authors are acknowledged experts in the field.
Author: Robert Eason
Publisher: John Wiley & Sons
ISBN: 0470052112
Category : Science
Languages : en
Pages : 754
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Book Description
Edited by major contributors to the field, this text summarizes current or newly emerging pulsed laser deposition application areas. It spans the field of optical devices, electronic materials, sensors and actuators, biomaterials, and organic polymers. Every scientist, technologist and development engineer who has a need to grow and pattern, to apply and use thin film materials will regard this book as a must-have resource.
Author: Byung-Eun Park
Publisher: Springer Nature
ISBN: 9811512124
Category : Technology & Engineering
Languages : en
Pages : 421
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Book Description
This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.
Author: Evelyn Tina Breyer
Publisher: BoD – Books on Demand
ISBN: 3755708523
Category : Technology & Engineering
Languages : en
Pages : 216
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Book Description
Not only conventional computer architectures, such as the von-Neumann architecture with its inevitable von-Neumann bottleneck, but likewise the emerging field of edge computing require to substantially decrease the spatial separation of logic and memory units to overcome power and latency shortages. The integration of logic operations into memory units (Logic-in-Memory), as well as memory elements into logic circuits (Nonvolatile Logic), promises to fulfill this request by combining high-speed with low-power operation. Ferroelectric field-effect transistors (FeFETs) based on hafnium oxide prove to be auspicious candidates for the memory elements in applications of that kind, as those nonvolatile memory elements are CMOS-compatible and likewise scalable. This work presents implementations that merge logic and memory by exploiting the natural capability of the FeFET to combine logic functionality (transistor) and memory ability (nonvolatility).
Author: Cheol Seong Hwang
Publisher: Springer Science & Business Media
ISBN: 146148054X
Category : Science
Languages : en
Pages : 266
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Book Description
Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.
Author: Tim S. Böscke
Publisher: Cuvillier Verlag
ISBN: 3736933460
Category : Science
Languages : en
Pages : 181
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Book Description
This work investigates the crystallography and dielectric properties of Zirconium- and Hafnium-oxide based nano-scale thin film insulators for memory. Hafnium- and Zirconium-oxide are industry leading candidates for high-k dielectrics. Most application research has focused on the application of amorphous high-k due to formation of defects associated with the crystalline phase. However the application of crystalline dielectrics offers two advantages: Potentially high thermal stability, since no measures have to be taken to avoid crystallization, and the ability to manipulate crystalline phase composition to maximize dielectric constants. Pure ZrO2 crystallized at a lower temperature than HfO2 and always formed a metastable t’ higher-k phase. ZrO2 crystallized already during deposition, leading to leakage current degradation. It was shown that this problem could be solved by SiO2 addition to raise the crystallization temperature, allowing fabrication of low leakage, low effective oxide thickness (EOT) metal-insulator-metal (MIM) capacitors suitable for stack based DRAM down to the 4X nm node. HfO2, in contrast, formed a mixture of monoclinic and tetragonal phase which led to the formation of mechanical defects (microcracks). Addition of SiO2 allowed manipulating the phase composition of HfO2. When up to 7 mol% SiO2 was added, increased stabilization of the metastable t' phase with a dielectric constant of 34-36 was observed. It could be shown that the stabilization is due to a combination of a surface energy effect and solved SiO2 in the HfO2 lattice. Above 11 mol% SiO2 segregated from HfO2 and a tetragonal phase with higher c/a splitting and lower dielectric constant was stabilized instead. It was discovered that the behavior of HfSiO was fundamentally altered if it was crystallized under mechanical confinement in presence of a top electrode. Besides a significant increase in dielectric constant, the material exhibited ferroelectric and antiferroelectric polarization hysteresis, a characteristic not previously reported for HfO2 or ZrO2. This behavior originated from the formation of a new orthorhombic crystal phase. Utilizing the increased permittivity of the antiferroelectic phase, it was possible to demonstrate low EOT, highly temperature stable, MIM capacitors with potential application in sub 50 nm deep trench-DRAM generations. Novel ferroelectric HfSiO was used to fabricate ferroelectric field effect transistors which allowed long term nonvolatile data storage. The electrical characteristics of the devices meet or exceed that of the best published literature results. Full compatibility to silicon semiconductor technology with a gate stack thickness down to 5 nm was demonstrated for the first time, suggesting that HfSiO based FEFETs can potentially be scaled to below the 30 nm node. This goal could not be achieved with previously known materials.
Author: Bruce J Berne
Publisher: World Scientific
ISBN: 9814496057
Category : Science
Languages : en
Pages : 881
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Book Description
The school held at Villa Marigola, Lerici, Italy, in July 1997 was very much an educational experiment aimed not just at teaching a new generation of students the latest developments in computer simulation methods and theory, but also at bringing together researchers from the condensed matter computer simulation community, the biophysical chemistry community and the quantum dynamics community to confront the shared problem: the development of methods to treat the dynamics of quantum condensed phase systems.This volume collects the lectures delivered there. Due to the focus of the school, the contributions divide along natural lines into two broad groups: (1) the most sophisticated forms of the art of computer simulation, including biased phase space sampling schemes, methods which address the multiplicity of time scales in condensed phase problems, and static equilibrium methods for treating quantum systems; (2) the contributions on quantum dynamics, including methods for mixing quantum and classical dynamics in condensed phase simulations and methods capable of treating all degrees of freedom quantum-mechanically.
