Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
This research program began January 6, 1976. Its objective is to demonstrate the feasibility of the floating substrate sheet growth process for the growth of silicon sheet. This process is an approach to the formation of single-crystal silicon by direct epitaxial conversion from a gaseous silane. Incoming feedstock gas impinges upon a silicon substrate which is floating upon a thin pool of liquid tin. Single-crystal silicon grows to the desired thickness by means of vapor phase epitaxy. Nucleation of fresh substrate silicon takes place by rapid growth from the edge of the growing sheet into a region at the surface of the liquid tin which is supersaturated in the silicon. The process lends itself to continuous operation with the growing sheet being continuously withdrawn from the growth zone. (WDM).
Floating Substrate Process. Second Quarterly Progress Report, March 29, 1976--June 20, 1976
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
This research program began January 6, 1976. Its objective is to demonstrate the feasibility of the floating substrate sheet growth process for the growth of silicon sheet. This process is an approach to the formation of single-crystal silicon by direct epitaxial conversion from a gaseous silane. Incoming feedstock gas impinges upon a silicon substrate which is floating upon a thin pool of liquid tin. Single-crystal silicon grows to the desired thickness by means of vapor phase epitaxy. Nucleation of fresh substrate silicon takes place by rapid growth from the edge of the growing sheet into a region at the surface of the liquid tin which is supersaturated in the silicon. The process lends itself to continuous operation with the growing sheet being continuously withdrawn from the growth zone. (WDM).
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
This research program began January 6, 1976. Its objective is to demonstrate the feasibility of the floating substrate sheet growth process for the growth of silicon sheet. This process is an approach to the formation of single-crystal silicon by direct epitaxial conversion from a gaseous silane. Incoming feedstock gas impinges upon a silicon substrate which is floating upon a thin pool of liquid tin. Single-crystal silicon grows to the desired thickness by means of vapor phase epitaxy. Nucleation of fresh substrate silicon takes place by rapid growth from the edge of the growing sheet into a region at the surface of the liquid tin which is supersaturated in the silicon. The process lends itself to continuous operation with the growing sheet being continuously withdrawn from the growth zone. (WDM).
Energy Research Abstracts
Author:
Publisher:
ISBN:
Category : Power resources
Languages : en
Pages : 564
Book Description
Semiannual, with semiannual and annual indexes. References to all scientific and technical literature coming from DOE, its laboratories, energy centers, and contractors. Includes all works deriving from DOE, other related government-sponsored information, and foreign nonnuclear information. Arranged under 39 categories, e.g., Biomedical sciences, basic studies; Biomedical sciences, applied studies; Health and safety; and Fusion energy. Entry gives bibliographical information and abstract. Corporate, author, subject, report number indexes.
Publisher:
ISBN:
Category : Power resources
Languages : en
Pages : 564
Book Description
Semiannual, with semiannual and annual indexes. References to all scientific and technical literature coming from DOE, its laboratories, energy centers, and contractors. Includes all works deriving from DOE, other related government-sponsored information, and foreign nonnuclear information. Arranged under 39 categories, e.g., Biomedical sciences, basic studies; Biomedical sciences, applied studies; Health and safety; and Fusion energy. Entry gives bibliographical information and abstract. Corporate, author, subject, report number indexes.
ERDA Energy Research Abstracts
Author: United States. Energy Research and Development Administration
Publisher:
ISBN:
Category : Medicine
Languages : en
Pages : 852
Book Description
Publisher:
ISBN:
Category : Medicine
Languages : en
Pages : 852
Book Description
ERDA Energy Research Abstracts
Author: United States. Energy Research and Development Administration. Technical Information Center
Publisher:
ISBN:
Category : Force and energy
Languages : en
Pages : 1680
Book Description
Publisher:
ISBN:
Category : Force and energy
Languages : en
Pages : 1680
Book Description
Government Reports Annual Index
Author:
Publisher:
ISBN:
Category : Government reports announcements & index
Languages : en
Pages : 968
Book Description
Publisher:
ISBN:
Category : Government reports announcements & index
Languages : en
Pages : 968
Book Description
Government Reports Announcements & Index
Author:
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 1108
Book Description
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 1108
Book Description
ERDA Energy Research Abstracts
Author: United States. Energy Research and Development Administration
Publisher:
ISBN:
Category : Power resources
Languages : en
Pages : 918
Book Description
Publisher:
ISBN:
Category : Power resources
Languages : en
Pages : 918
Book Description
Solar Energy Update
Author:
Publisher:
ISBN:
Category : Solar energy
Languages : en
Pages : 874
Book Description
Publisher:
ISBN:
Category : Solar energy
Languages : en
Pages : 874
Book Description
Sharing the Sun
Author:
Publisher:
ISBN:
Category : Solar energy
Languages : en
Pages : 364
Book Description
Publisher:
ISBN:
Category : Solar energy
Languages : en
Pages : 364
Book Description
Photovoltaics and Materials
Author: International Solar Energy Society. American Section
Publisher:
ISBN:
Category : Photovoltaic power generation
Languages : en
Pages : 368
Book Description
Publisher:
ISBN:
Category : Photovoltaic power generation
Languages : en
Pages : 368
Book Description